AOT15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copackage diode is targeted for minimal losses in motor control applications. VCE IC (TC=100°C) 600V 15A VCE(sat) (TC=25°C) 1.6V 100% Eon/Eoff Tested 100% Qrr Tested 100% Short Circuit Current Tested* Top View C TO-220 G C E E G AOT15B60D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM Continuous Diode Forward Current TC=25°C TC=100°C AOT15B60D 600 Units V ±20 V 30 15 60 A 60 A 30 IF A 15 A Diode Pulsed Current, Limited by TJmax I FM 60 A Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=150°C t SC 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case PD T J , T STG TL Symbol R θ JA R θ JC R θ JC 167 83.3 W -55 to 175 °C 300 °C AOT15B60D 65 0.9 Units °C/W °C/W 1.5 °C/W * VCE equal to 50V Rev1: Nov 2012 www.aosmd.com Page 1 of 9 AOT15B60D Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES I GES g FS Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=15A Collector-Emitter Saturation Voltage VGE=0V, IC=15A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Gate-Emitter leakage current Forward Transconductance Max Units V 600 - - TJ=25°C - 1.6 1.8 TJ=125°C - 1.85 - TJ=175°C - 1.99 - TJ=25°C - 1.43 1.72 TJ=125°C - 1.39 - TJ=175°C - 1.32 - - 5.8 - TJ=25°C - - 10 TJ=125°C - - 300 TJ=175°C - - 3000 VCE=VGE, IC=1mA Gate-Emitter Threshold Voltage Typ V V V µA VCE=0V, VGE=±20V - - ±100 VCE=20V, IC=15A - 7.7 - - 1290 - pF - 97 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz nA S C oes Output Capacitance C res Reverse Transfer Capacitance - 3.1 - pF Qg Total Gate Charge - 25.4 - nC Q ge Gate to Emitter Charge - 9.5 - nC - 8.3 - nC - 74 - A - 2.4 - Ω VGE=15V, VCE=480V, IC=15A Q gc Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=20Ω I C(SC) short circuits ≥ 1.0s VGE=0V, VCE=0V, f=1MHz Gate resistance Rg SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) t D(on) Turn-On DelayTime - 21 - ns tr Turn-On Rise Time - 19 - ns t D(off) Turn-Off Delay Time - 73 - ns tf Turn-Off Fall Time - 10 - ns TJ=25°C VGE=15V, VCE=400V, IC=15A, RG=20Ω, Parasitic Ιnductance=100nH E on Turn-On Energy - 0.42 - mJ E off Turn-Off Energy - 0.11 - mJ E total t rr Total Switching Energy - 0.53 - mJ Diode Reverse Recovery Time - 196 - Q rr Diode Reverse Recovery Charge - 0.48 - ns µC - 5.8 - A TJ=25°C IF=15A,dI/dt=200A/µs,VCE=400V I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) t D(on) Turn-On DelayTime - 19 - ns tr Turn-On Rise Time - 19 - ns t D(off) Turn-Off Delay Time - 95 - ns tf Turn-Off Fall Time - 10 - ns E on Turn-On Energy - 0.58 - mJ E off Turn-Off Energy - 0.2 - mJ E total t rr Total Switching Energy - 0.78 - mJ Diode Reverse Recovery Time - 235 - Q rr Diode Reverse Recovery Charge - 1.1 - ns µC I rm Diode Peak Reverse Recovery Current - 8.5 - A TJ=175°C VGE=15V, VCE=400V, IC=15A, RG=20Ω, Parasitic Inductance=100nH TJ=175°C IF=15A,dI/dt=200A/µs,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Nov 2012 www.aosmd.com Page 2 of 9 AOT15B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 20V 20V 70 17V 80 17V 60 15V IC (A) IC (A) 15V 60 13V 40 50 13V 40 30 11V 11V 20 20 VGE= 7V 9V 9V 10 0 VGE=7V 0 0 1 2 3 4 5 6 7 0 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 1 2 3 4 5 6 7 VCE(V) Fig 2: Output Characteristic (Tj=175°C ) 50 70 VCE=20V -40°C 60 -40°C 40 175°C 50 175°C 40 30 IF (A) IC (A) 25°C 30 20 25°C 20 10 10 0 0 4 7 10 13 0.0 16 VGE(V) Fig 3: Transfer Characteristic 0.5 1.0 1.5 2.0 2.5 3.0 VF (V) Fig 4: Diode Characteristic 4 50 100 40 80 30 60 20 40 10 20 Time (µ µS) VCE(sat) (V) 3 IC=15A 2 1 IC=7.5A 0 0 0 25 50 75 100 125 150 175 200 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev1: Nov 2012 www.aosmd.com Current(A) IC=30A 0 5 8 11 14 17 20 VGE (V) Fig 6: VGE vs. Short Circuit Time (VCE=400V,TC=25°C ) Page 3 of 9 AOT15B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=480V IC=15A 12 Cies 9 Capacitance (pF) IC (A) 1000 6 3 Coes 100 10 0 Cres 1 0 5 10 15 20 25 30 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic Ic (A) 100 10 1 180 30 150 25 120 20 Current rating IC(A) Power Disspation (W) 10 90 60 30 0 100 VCE (V) Fig 10: Reverse Bias SOA (Tj=175°C,V GE=15V) 1,000 15 10 5 0 25 50 75 100 125 150 175 TCASE(°C) Fig 11: Power Disspation as a Function of Case Rev1: Nov 2012 www.aosmd.com 25 50 75 100 125 150 175 TCASE(°C) Fig 12: Current De-rating Page 4 of 9 AOT15B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10,000 Td(off) Tf Td(on) Tr Td(off) Tf Switching Time (nS) Switching Time (nS) 1000 100 10 Tr 100 10 1 1 0 5 10 15 20 25 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C,V GE=15V,VCE=400V,Rg=20Ω Ω) 30 35 0 1000 50 100 150 200 Rg (Ω Ω) Figure 14: Switching Time vs. Rg (Tj=175°C,V GE=15V,VCE=400V,IC=15A) 250 8 Td(off) Tf Td(on) Tr 7 100 VGE(TH)(V) Switching Time (nS) Td(on) 1,000 6 5 4 10 3 2 1 0 100 150 TJ (°C) Figure 15: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=15A,Rg=20Ω Ω) Rev1: Nov 2012 50 200 www.aosmd.com 0 30 60 90 TJ (°C) Figure 16: VGE(TH) vs. Tj 120 150 Page 5 of 9 AOT15B60D ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 1.5 Eoff Eoff Eon Eon 1.2 Switching Energy (mJ) SwitchIng Energy (mJ) 1.6 Etotal 1.2 0.8 0.4 Etotal 0.9 0.6 0.3 0 0.0 0 5 10 15 20 25 30 IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C,V GE=15V,VCE=400V,Rg=20Ω Ω) 35 0 1 50 150 200 Rg (Ω Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C,V GE=15V,VCE=400V,IC=15A) 250 1.0 Eoff Eoff 0.8 Eon Eon 0.8 Switching Energ y (mJ) Etotal Switching Energy (mJ) 100 0.6 0.4 0.2 0 Etotal 0.6 0.4 0.2 0.0 0 25 Rev1: Nov 2012 50 75 100 125 150 175 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=15A,Rg=20Ω Ω) 200 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C,V GE=15V,IC=15A,Rg=20Ω Ω) 500 Page 6 of 9 AOT15B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 1.8 15A 1.E-04 1.4 10A VSD (V) 5A 1.E-06 IF=1A VCE=400V 0.6 1.E-07 1.E-08 0.2 25 50 75 100 125 150 175 200 0 50 75 100 125 150 175 Temperature (°C ) Fig 22: Diode Forward voltage vs. Junction Temperature Temperature (°C ) Fig 21: Diode Reverse Leakage Current vs. Junction Temperature 175°C Qrr (nC) 1200 1000 Qrr 800 400 16 70 350 14 60 300 50 250 40 600 30 25°C 400 175°C 200 Irm 25°C 0 5 Trr (nS) 1400 10 50 70 S 4 2 25°C 5 10 0 15 20 25 30 35 IS (A) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 20 250 175°C 16 60 Qrr 800 40 600 30 400 25°C Irm 25°C 0 100 200 12 150 25°C 100 10 0 50 25°C 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 25: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=15A) Rev1: Nov 2012 Trr 8 S 175°C 20 175°C 200 200 50 Trr (nS) 1000 Irm(A) Qrr (nC) 1200 175°C 300 80 175°C 6 25°C 0 15 10 8 0 20 25 30 35 IF(A) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 1400 Trr 150 100 1600 12 175°C 200 20 0 10 200 80 Irm(A) 1600 25 S 0 0 13V 1 S ICE(S) (A) VCE=600V 1.E-05 300 www.aosmd.com 100 200 300 4 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 26: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=15A) Page 7 of 9 AOT15B60D □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.9°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 27: Normalized Maximum Transient Thermal Impedance for IGBT Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 28: Normalized Maximum Transient Thermal Impedance for Diode Rev1: Nov 2012 www.aosmd.com Page 8 of 9 AOT15B60D Rev1: Nov 2012 www.aosmd.com Page 9 of 9