AOD7B65M3 650V, 7A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 7A VCE(sat) (TJ=25°C) 1.87V Applications • Motor Drives • Home appliance applications such as refrigerators and washing machines • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-252 DPAK Top View C Bottom View C C G E G E G E AOD7B65M3 Orderable Part Number Package Type Form Minimum Order Quantity AOD7B65M3 TO252 Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOD7B65M3 Collector-Emitter Voltage V CE 650 Gate-Emitter Voltage V GE ±30 2500 Units V V Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 21 A Turn off SOA, VCE ≤ 650V, Limited by TJmax I LM 21 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax Short circuit withstanding time 1) VGE = 15V, VCC ≤ 400V, TJ ≤ 150°C Power Dissipation TC=25°C TC=100°C Junction and Storage Temperature Range IF 14 7 10 5 A I FM 21 A t SC 5 µs PD T J , T STG 69 28 -55 to 150 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics AOD7B65M3 Parameter Symbol R θ JA Maximum Junction-to-Ambient 55 R θ JC Maximum IGBT Junction-to-Case 1.8 Maximum Diode Junction-to-Case R θ JC 5.5 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev.1.0: February 2016 A www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=7A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=7A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.87 2.35 TJ=125°C - 2.34 - TJ=150°C - 2.47 - V TJ=25°C - 2.1 2.6 TJ=125°C - 2.04 - TJ=150°C - 2 - - 5.1 - V V TJ=25°C - - 10 TJ=125°C - - 500 TJ=150°C - - 1000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=7A - 3.6 - S - 348 - pF - 36 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 13 - pF Qg Total Gate Charge - 14 - nC Q ge Gate to Emitter Charge - 3.2 - nC Q gc Gate to Collector Charge - 6.7 - nC - 30 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 6 - Ω t D(on) Turn-On DelayTime - 6 - ns tr Turn-On Rise Time - 14 - ns - 79 - ns - 20 - ns I C(SC) VGE=15V, VCC=520V, IC=7A VGE=15V, VCC=400V, tsc≤5us, TJ≤150°C Short circuit collector current t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E on Turn-On Energy - 0.108 - mJ E off Turn-Off Energy - 0.099 - mJ E total t rr Total Switching Energy - 0.208 - mJ Diode Reverse Recovery Time - 212 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=7A, RG=43Ω - 0.29 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150°C) - 3 - A t D(on) Turn-On DelayTime - 6 - ns tr Turn-On Rise Time - 15 - ns t D(off) Turn-Off Delay Time - 94 - ns tf Turn-Off Fall Time - 42 - ns E on Turn-On Energy - 0.113 - mJ E off Turn-Off Energy - 0.16 - mJ E total t rr Total Switching Energy - 0.273 - mJ Diode Reverse Recovery Time - 273 - Q rr Diode Reverse Recovery Charge - 0.45 - ns µC I rm Diode Peak Reverse Recovery Current - 3.5 - A TJ=25°C IF=7A, dI/dt=200A/µs, VCC=400V I rm TJ=150°C VGE=15V, VCC=400V, IC=7A, RG=43Ω TJ=150°C IF=7A, dI/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2016 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 25 17V 20V 20 15V IC (A) IC (A) 13V 15 11V 10 13V 15 10 9V 5 20V 17V 15V 20 11V 9V 5 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 VCE(V) Figure 2: Output Characteristic (Tj=150°C ) VCE(V) Figure 1: Output Characteristic (Tj=25°C ) 15 15 VCE=20V 12 9 9 150°C 150°C IF (A) IC (A) 12 6 6 25°C 3 -40°C 3 25°C -40°C 0 0 3 6 9 12 VGE(V) Figure 3: Transfer Characteristic 15 0 1 2 3 4 5 VF (V) Figure 4: Diode Characteristic 6 3.5 14A 3 5 IC=14A 2.5 VSD (V) VCE(sat) (V) 4 3 IC=7A 2 7A 1.5 2 1 1 IC=3.5A IF=1A 0.5 0 0 0 25 50 75 100 125 150 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: February 2016 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C ) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=7A 12 1000 Capacitance (pF) VGE(V) Cies 9 6 3 0 100 Coes 10 Cres 1 0 4 8 12 16 20 0 Qg(nC) Figure 7: Gate-Charge Characteristics 8 16 24 32 40 VCE(V) Figure 8: Capacitance Characteristic 100 Power Disspation (W) 80 60 40 20 0 25 50 75 100 125 150 TCASE(°C) Figure 10: Power Disspation as a Function of Case 18 1E-03 1E-04 12 1E-05 ICE(S) (A) Current rating IC(A) 15 9 VCE=650V 1E-06 6 1E-07 3 1E-08 0 VCE=520V 1E-09 25 50 75 100 125 150 TCASE(°C) Figure 11: Current De-rating Rev.1.0: February 2016 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C ) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 100 10 1 100 10 1 3 5 7 9 11 13 IC (A) Figure 13: Switching Time vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=43Ω) 10000 0 15 100 200 300 400 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=7A) 500 7 Td(off) Tf Td(on) Tr 6 VGE(TH)(V) 1000 Switching Time (nS) Td(off) Tf Td(on) Tr 1000 Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) Tf Td(on) Tr 100 5 4 3 10 2 1 1 25 50 75 100 125 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V,VCE=400V,IC=7A,Rg=43Ω) Rev.1.0: February 2016 150 www.aosmd.com 0 25 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.7 0.7 Eoff Eoff 0.6 Eon Switching Energy (mJ) SwitchIng Energy (mJ) 0.6 Etotal 0.5 0.4 0.3 0.2 0.1 Eon Etotal 0.5 0.4 0.3 0.2 0.1 0 0.0 3 5 7 9 11 13 15 0 IC (A) Figure 17: Switching Loss vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=43Ω) 200 300 400 500 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=7A) 0.35 0.35 Eoff Eoff 0.3 0.3 Eon Switching Energ y (mJ) Switching Energy (mJ) 100 Etotal 0.25 0.2 0.15 0.1 0.05 Eon Etotal 0.25 0.2 0.15 0.1 0.05 0 0 25 50 75 100 125 150 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=7A,Rg=43Ω) Rev.1.0: February 2016 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150°C,VGE=15V,IC=7A,Rg=43Ω) Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 400 18 500 15 320 150°C Qrr 240 15 Trr 25°C 160 Irm 150°C 100 80 3 5 25°C 25°C 0 0 5 10 150°C 6 3 S 9 Irm(A) 300 200 9 11 13 15 IF(A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V,di/dt=200A/µs) 0 3 7 9 11 13 15 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V,di/dt=200A/µs) 15 25 320 20 150°C Trr 150°C 9 240 15 25°C S Qrr 300 Irm(A) 12 25°C Trr (nS) 400 5 400 18 500 S 0 7 600 Qrr (nC) 20 150°C 12 25°C Trr (nS) Qrr (nC) 400 25 160 200 100 25°C Irm 0 3 0 50 100 80 S 5 25°C 0 150 200 250 300 350 400 di/dt (A/µS) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=7A) Rev.1.0: February 2016 10 150°C 6 150°C www.aosmd.com 0 50 100 150 200 250 300 350 400 di/dt (A/µS) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=7A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.8°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: February 2016 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: February 2016 www.aosmd.com Page 9 of 9