Databook.fxp 1/13/99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: IFN147 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ – 40 V 10 mA 300 mW 2.4 mW/°C Process NJ450 Max – 40 Unit Test Conditions V IG = – 1 µA, VDS = ØV –1 nA VGS = – 30V, VDS = ØV –1 µA VGS = – 30V, VDS = ØV – 0.3 – 1.2 V VDS = 10V, ID = 1 µA IDSS 5 30 mA VDS = 10V, VGS = ØV Common Source Forward Transconductance gfs 30 mS VDS = 10V, VGS = ØV IDSS = 5 mA f = 1 kHz Common Source Input Capacitance Ciss 75 pF VDS = 10V, VGS = ØV f = 1 kHz Common Source Reverse Transfer Capacitance Crss 15 pF VDS = 10V, ID = Ø f = 1 Hz Noise Figure NF dB VDS = 10V, ID = 5 mA RG = 100Ω f = 1 kHz TA = 150°C Dynamic Electrical Characteristics 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 40 1 10 dB f = 100 Hz TOÐ18 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Gate & Case, 3 Drain www.interfet.com