Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IFN5911 Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Min V(BR)GSS Max IG Min Process NJ30L or NJ36D Max Unit V IG = – 1 µA, VDS = ØV – 100 – 100 pA VGS = – 15V, VDS = ØV – 250 – 250 nA VGS = – 15V, VDS = ØV – 100 – 100 pA VDG = 10V, ID = 5 mA – 100 – 100 nA VDG = 10V, ID = 5 mA – 25 IGSS IFN5912 – 25 50 mA 500 mW 4 mW/°C – 65°C to 200°C Test Conditions Gate Source Cutoff Voltage VGS(OFF) –1 –5 –1 –5 V VDS = 10V, ID = 1 nA Gate Source Voltage VGS – 0.3 –4 – 0.3 –4 V VDS = 10V, ID = 5 mA Drain Saturation Current (Pulsed) IDSS 7 40 7 40 mA VDS = 10V, VGS = ØV 3000 10000 3000 10000 µS VDG = 10V, ID = 5 mA 3000 10000 3000 10000 TA = 150°C TA = 125°C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs f = 1 kHz µS VDG = 10V, ID = 5 mA f = 100 MHz 100 100 µS VDG = 10V, ID = 5 mA f = 1 kHz Common Source Output Conductance gos 150 150 µS VDG = 10V, ID = 5 mA f = 100 MHz Common Source Input Capacitance Ciss 5 5 pF VDG = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.2 1.2 pF VDG = 10V, ID = 5 mA f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 20 20 nV/√Hz VDG = 10V, ID = 5 mA f = 10 kHz Noise Figure NF 1 1 dB VDG = 10V, ID = 5 mA RG = 100 KΩ f = 10 Hz Differential Gate Current |IG1 | – |IG2 | 20 20 nA VDG = 10V, ID = 5 mA TA = 125°C Saturation Drain Current Ratio IDSS1 / IDSS2 0.95 1 Differential Gate Source Voltage VGS1 – VGS2 ∆VGS1 – VGS2 10 15 mV VDG = 10V, ID = 5 mA 20 40 µV/°C VDG = 10V, ID = 5 mA TA = 25°C TB = 125°C 20 40 µV/°C VDG = 10V, ID = 5 mA TA = – 55°C TB = 25°C VDG = 10V, ID = 5 mA f = 1 kHz Gate Source Voltage Differential Drift ∆T ∆VGS1 – VGS2 ∆T Transconductance Ratio gfs1 / gfs2 0.95 1 0.95 0.95 TOÐ78 Package Pin Configuration See Section G for Outline Dimensions 1 Source, 2 Drain, 3 Gate, 4 Case, 5 Source, 6 Drain, 7 Gate, 8 Omitted www.interfet.com 1 1 VDS = 10V, VGS = ØV 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375