Databook.fxp 1/13/99 2:09 PM Page B-28 B-28 01/99 IF140, IF140A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low-Noise, High Gain Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IF140 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage IF140A Max – 20 Min Max – 20 V 10 mA 375 mW 3 mW/°C – 65°C to 200°C Process NJ14AL Unit – 20 Test Conditions V IG = – 1 µA, VDS = ØV – 0.1 – 0.1 nA VGS = – 15V, VDS = ØV – 0.2 – 0.2 nA VGS = – 15V, VDS = ØV VGS(OFF) –6 –6 V VDS = 15V, ID = 5 nA Gate Source Voltage VGS –5 –6 V VDS = 15V, ID = 50 µA Gate Source Forward Voltage VGS(F) 1 V VDS = Ø, IG = 1 mA Drain Saturation Current (Pulsed) IDSS 15 mA VDS = 15V, VGS = ØV mS VDS = 15V, VGS = ØV f = 1 kHz – 2.5 1 5 15 5 TA = 150°C Dynamic Electrical Characteristics Common Source Forward Transmittance Yfs 4.5 4.5 Common Source Output Conductance Yos 0.05 0.05 µS VDS = 15V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 3 3 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 0.6 0.6 pF VDS = 15V, VGS = ØV f = 1 MHz nV/√Hz VDS = 12V, VGS = ØV f = 10 Hz Equivalent Short Circuit Input Noise Voltage e¯ N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Typ Typ 4 4 TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com