FS30ASJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1412-0200 (Previous: MEJ02G0064-0101) Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 84 mΩ ID : 30 A Integrated Fast Recovery Diode (TYP.) : 80 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 2, 4 4 1. 2. 3. 4. 1 12 3 Gate Drain Source Drain 3 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Ratings 100 ±20 30 120 30 30 120 35 – 55 to +150 – 55 to +150 Unit V V A A A A A W °C °C — 0.32 g Mass Rev.2.00 Aug 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value FS30ASJ-2 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min 100 — — 1.0 — — — — — — — — — — — — — Typ — — — 1.5 65 70 0.98 23 1800 230 120 17 46 135 95 1.0 — Max — ±0.1 0.1 2.0 84 91 1.26 — — — — — — — — 1.5 3.57 Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W trr — 80 — ns Reverse recovery time Rev.2.00 Aug 07, 2006 page 2 of 6 Test Conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V ID = 15 A, VGS = 4 V ID = 15 A, VGS = 10 V ID = 15 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 50 V, ID = 15 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 15 A, VGS = 0 V Channel to case IS = 30 A, dis/dt = –100 A/µs FS30ASJ-2 Performance Curves Maximum Safe Operating Area Power Dissipation Derating Curve 3 2 40 Drain Current ID (A) Power Dissipation PD (W) 50 30 20 10 0 0 50 100 150 200 = 10 µs 10 0µ s 101 7 5 3 2 DC 100 7 Tc = 25°C 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) 50 20 VGS = 10V 6V 5V 40 Drain Current ID (A) Drain Current ID (A) tw 102 7 5 3 2 4V 30 Tc = 25°C Pulse Test 20 3V 10 16 Tc = 25°C Pulse Test PD = 35W VGS = 10V 5V 4V 3V 12 8 2.5V 4 PD = 35W 0 1.0 2.0 3.0 4.0 0.8 1.2 1.6 On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) 4.0 3.0 30A 2.0 1.0 10A Tc = 25°C Pulse Test 2 4 6 8 Gate-Source Voltage VGS (V) Rev.2.00 0.4 Drain-Source Voltage VDS (V) ID = 50A 0 0 Drain-Source Voltage VDS (V) 5.0 0 0 5.0 Aug 07, 2006 page 3 of 6 10 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) 0 2.0 100 Tc = 25°C Pulse Test VGS = 4V 80 10V 60 40 20 0 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Drain Current ID (A) FS30ASJ-2 Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) 50 Tc = 25°C VDS = 10V Pulse Test 40 30 20 10 0 0 2 4 6 8 10 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 75°C 125°C 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Switching Characteristics (Typical) Tch = 25°C f = 1MHz VGS = 0V Switching Time (ns) Capacitance C (pF) Ciss 103 7 5 3 2 Coss 102 103 7 5 4 3 Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 2 td(off) tf 102 7 5 4 3 tr 2 Crss 101 0 10 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 td(on) 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 50 VGS = 0V Pulse Test Tch = 25°C ID = 30A Source Current IS (A) Gate-Source Voltage VGS (V) 2 Capacitance vs. Drain-Source Voltage (Typical) 10 8 6 VDS = 20V 50V 4 80V 2 0 10 20 30 40 Gate Charge Qg (nC) Rev.2.00 Tc = 25°C Drain Current ID (A) 104 7 5 3 2 0 VDS = 10V Pulse Test Gate-Source Voltage VGS (V) 2 7 5 3 2 102 7 5 4 3 Aug 07, 2006 page 4 of 6 50 40 30 20 Tc = 125°C 75°C 25°C 10 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 VGS = 10V ID = 15A Pulse Test 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 0.1 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 50 Channel Temperature Tch (°C) 1.4 0.4 Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) 101 7 5 4 3 Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS30ASJ-2 Aug 07, 2006 page 5 of 6 tr 90% td(off) tf FS30ASJ-2 Package Dimensions Previous Code 1Max Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 6.1 ± 0.2 6.6 5.3 ± 0.2 0.76 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZA-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name – T +Direction (1 or 2) +3 75 Type name Plastic Magazine (Tube) Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Standard order code example FS30ASJ-2-T13 FS30ASJ-2 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0