RENESAS 2SJ319

2SJ319(L), 2SJ319(S)
Silicon P Channel MOS FET
REJ03G0858-0200
(Previous: ADE-208-1192)
Rev.2.00
Sep 07, 2005
Description
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK (L)-(1) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
1
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
D
4
2
1. Gate
2. Drain
3. Source
4. Drain
G
3
S
2SJ319(L), 2SJ319(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Symbol
VDSS
Value
–200
Unit
V
VGSS
ID
±20
–3
V
A
–12
–3
A
A
20
150
W
°C
–55 to +150
°C
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel temperature
Pch
Tch
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
–200
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
IDSS
—
—
–100
–4.0
µA
V
VDS = –160 V, VGS = 0
ID = –1 mA, VDS = –10 V
Zero gate voltage drain current
Gate to source cutoff voltage
VGS (off)
—
–2.0
Static drain to source on state resistance
Forward transfer admittance
RDS (on)
|yfs|
—
1.0
1.7
1.7
2.3
—
Ω
S
ID = –2 A, VGS = –10 V
Note 3
ID = –2 A, VDS = –10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
330
130
—
—
pF
pF
Reverse transfer capacitance
Turn-on delay time
Crss
td (on)
—
—
25
10
—
—
pF
ns
VDS = –10 V
VGS = 0
f = 1 MHz
tr
30
40
—
—
ns
ns
Rise time
Turn-off delay time
td (off)
—
—
Fall time
Body to drain diode forward voltage
tf
VDF
—
—
30
–1.15
—
—
ns
V
trr
—
180
—
ns
Body to drain diode reverse recovery time
Note:
3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 7
Note 3
ID = –2 A
VGS = –10 V
RL = 15 Ω
IF = –3 A, VGS = 0
IF = –3 A, VGS = 0
diF/dt = 50 A/µs
2SJ319(L), 2SJ319(S)
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
–50
–30
ID (A)
15
–10
10
–3
Drain Current
Channel Dissipation
Pch (W)
20
10
05
0
50
100
150
–1
–0.3
Case Temperature
–0.05
–1
200
Tc (°C)
–3
Drain Current
–10
–6 V
Tc = –25°C
ID (A)
Pulse Test
–5 V
–2
–4 V
–1
–4
–8
–12
75°C
–3
–2
–1
VDS = –10 V
Pulse Test
–16
0
–20
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
Pulse Test
–16
–12
ID = –5 A
–8
–2 A
–4
–1 A
0
–4
–8
–12
Gate to Source Voltage
Rev.2.00 Sep 07, 2005 page 3 of 7
–16
–20
VGS (V)
0
–2
–4
–6
–8
Gate to Source Voltage
VDS (V)
–10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Voltage
0
VDS (V)
25°C
–4
VGS = –3.5 V
0
–100 –300 –500
–30
Typical Transfer Characteristics
Drain Current
ID (A)
–8 V
–3
0
µs
µs
–5
–10 V
–4
PW
Drain to Source Voltage
Typical Output Characteristics
–5
0
1
m
=
s
10
Op
m
s(
er
ati
1s
on
ho
(T
t)
Operation in
c=
this area is
25
°C
limited by RDS (on)
)
Ta = 25°C
DC
–0.1
0
10
10
5
VGS = –10 V
Pulse Test
2
1
0.5
0.2
0.1
–0.2
–0.5
–1
–2
Drain Current
–5
ID (A)
–10
2SJ319(L), 2SJ319(S)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
5
4
–2 A
3
ID = –5 A
2
–1 A
1
VGS = –10 V
Pulse Test
0
–40
0
40
80
Case Temperature
120
160
3
2
1
0.2
VDS = –10 V
Pulse Test
0.1
–0.05 –0.1 –0.2
Tc (°C)
–2
–5
–10
Typical Capacitance vs.
Drain to Source Voltage
1000
500
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
–0.5 –1
Drain Current ID (A)
500
100
50
20
di / dt = 50 A / µs, VGS = 0
duty ≤ 1 %, Ta = 25°C
10
5
–0.05 –0.1 –0.2
–0.5
–1
Reverse Drain Current
–2
100
50
20
–5
IDR (A)
–4
VDD = –150 V
–100 V
–50 V
–300
–8
–12
VGS
–16
–400
–500
0
4
8
Gate Charge
Rev.2.00 Sep 07, 2005 page 4 of 7
12
16
Qg (nc)
–30
–40
–50
–20
20
500
VGS = –10 V, VDD = –30 V
PW = 2 µs, duty ≤ 1 %
Switching Time t (ns)
VDS
–200
–20
Switching Characteristics
VGS (V)
–100
Crss
Drain to Source Voltage VDS (V)
0
VDD = –50 V
–100 V
–150 V
Coss
10 V = 0
GS
f = 1 MHz
5
0
–10
Gate to Source Voltage
0
Ciss
200
Dynamic Input Characteristics
VDS (V)
25°C
75°C
0.5
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
Tc = –25°C
200
100
td(off)
50
tf
20
tr
10
5
–0.05 –0.1 –0.2
td(on)
–0.5 –1
Drain Current
–2
ID (A)
–5
–10
2SJ319(L), 2SJ319(S)
Reverse Drain Current vs.
Source to Drain Voltage
–5
Reverse Drain Current IDR (A)
Pulse Test
–4
–3
–2
–10 V
–1
VGS = 0, 5 V
0
–1.2
–1.6
Source to Drain Voltage
VSD
0
–0.4
–0.8
–2.0
(V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
0.05
0.02
0.03
0.0
1s
1
t
ho
D=
PDM
pu
lse
0.01
10 µ
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –30 V
Vout
td(on)
Rev.2.00 Sep 07, 2005 page 5 of 7
10%
tr
10%
td(off)
tf
2SJ319(L), 2SJ319(S)
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004ZD-A
DPAK(L)-(1) / DPAK(L)-(1)V
0.42g
1.7 ± 0.5
JEITA Package Code
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
Unit: mm
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
16.2 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
RENESAS Code
Package Name
MASS[Typ.]
SC-63
PRSS0004ZD-C
DPAK(S) / DPAK(S)V
0.28g
6.5 ± 0.5
5.4 ± 0.5
(0.1)
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
Rev.2.00 Sep 07, 2005 page 6 of 7
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
JEITA Package Code
0.55 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2SJ319(L), 2SJ319(S)
Ordering Information
Part Name
2SJ319L-E
2SJ319STL-E
Quantity
3200 pcs
3000 pcs
Shipping Container
Box (Sack)
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0