2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS = 0.060 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 4 D 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.5.00 Sep 07, 2005 page 1 of 8 2 3 S 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID Ratings 60 ±20 10 40 10 10 8.5 20 150 –55 to +150 ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Rev.5.00 Sep 07, 2005 page 2 of 8 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.5 — — 5 — — — — — — — — — Typ — — — — — 0.060 0.095 8 350 190 70 10 55 60 70 0.9 50 Max — — ±10 10 2.5 0.080 0.160 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 VNote4 ID = 5 A, VGS = 4 V Note4 ID = 5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6 Ω IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/ dt =50A/µs 2SK2925(L),2SK2925(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 300 Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 0 50 100 150 200 100 10 30 10 µs P 0µ 1 DC W = m s 1 Op 0m s er 3 s at ion (1sh Operation in ( 1 Tc ot) this area is = 25 limited by RDS(on) °C 0.3 ) Ta = 25°C 0.1 3 30 0.1 0.3 1 10 100 10 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 6 V 20 20 16 5V Drain Current ID (A) Drain Current ID (A) Pulse Test 4V 12 8 4 3V 25°C 16 Tc = –25°C 75°C 12 8 4 VDS = 10 V Pulse Test VGS = 2.5 V 2 4 6 8 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 2.0 Pulse Test 1.6 1.2 0.8 ID = 10 A 0.4 0 0 10 5A 2A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.5.00 Sep 07, 2005 page 3 of 8 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 0 1.0 Pulse Test 0.5 0.2 VGS = 4 V 0.1 0.05 10 V 0.02 0.01 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK2925(L),2SK2925(S) 0.5 Pulse Test 0.4 0.3 ID = 10 A 5A 2A 0.2 VGS = 4 V 0.1 10 A 2, 5 A 10 V 0 –40 0 40 80 120 160 Tc = –25°C 5 25°C 75°C 2 1 0.5 0.1 0.2 2 10 20 5 1000 Capacitance C (pF) 500 100 50 20 Ciss 200 Coss 100 50 Crss 20 10 VGS = 0 f = 1 MHz 10 5 0.1 0.2 0.5 1 2 5 0 10 20 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 VDD = 50 V 25 V 10 V 12 VDS VGS 40 8 20 4 VDD = 50 V 25 V 10 V 4 8 12 16 Gate Charge Qg (nc) Rev.5.00 Sep 07, 2005 page 4 of 8 0 20 1000 Switching Time t (ns) 20 ID = 10 A 80 0 1 Typical Capacitance vs. Drain to Source Voltage 200 60 0.5 Body to Drain Diode Reverse Recovery Time di / dt = 50 A / µs VGS = 0, Ta = 25°C 100 VDS = 10 V Pulse Test Drain Current ID (A) Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 10 Case Temperature TC (°C) 500 Drain to Source Voltage VDS (V) 20 300 100 td(off) 30 tf 10 3 1 0.1 tr td(on) VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 2SK2925(L),2SK2925(S) 16 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 20 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 10 V 12 5V VGS = 0, –5 V 8 4 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 10 IAP= 10 A VDD = 25 V duty < 0.1 % Rg > 50 Ω 8 6 4 2 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.05 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25°C/W, Tc = 25°C 0.02 e 1 0.0 0.03 uls PDM tP 1 o sh D= PW T PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m 10 PW (S) Avalanche Test Circuit VDS Monitor 1 Avalanche Waveform L EAR = 1 2 • L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.5.00 Sep 07, 2005 page 5 of 8 VDD 2SK2925(L),2SK2925(S) Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vout Vin 10 V 50 Ω 10% 10% VDD = 30 V 90% td(on) Rev.5.00 Sep 07, 2005 page 6 of 8 10% tr 90% td(off) tf 2SK2925(L),2SK2925(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 ± 0.5 JEITA Package Code 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 ± 0.5 5.4 ± 0.5 (0.1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.5.00 Sep 07, 2005 page 7 of 8 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2SK2925(L),2SK2925(S) Ordering Information Part Name 2SK2925L-E 2SK292ST5L-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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