JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 DA227 SWITCHING DIODE FEATURES z High speed z Suitable for high packing density layout z High reliability 5 1 MARKING: N20 4 2 3 Maximum Ratings @Ta=25 ℃ Parameter Symbol Limit Peak reverse voltage VRM 80 DC reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation PD 200 mW Junction temperature Tj 150 ℃ Storage temperature Tstg Unit V ℃ -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit V(BR) IR= 100μA Reverse voltage leakage current IR VR=70V 0.1 μA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD VR=6V, f=1MHz 3.5 pF Reverse recovery time trr VR=6V, IF=5mA 4 ns Reverse breakdown voltage 80 V A,Jun,2011