A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 0 7 D E C T ( 1 . 9 G H z ) T r a n s m i t - R ec e i v e P I N - D i o d e Switch R F & P r o t e c ti o n D e v i c e s Edition 2006-10-10 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Application Note No. 007 DECT (1.9 GHz) Transmit - Receive PIN-Diode Switch Revision History: 2006-10-10, Rev. 2.0 Previous Version: 2000-07-27 Page Subjects (major changes since last revision) All Document layout change Application Note 3 Rev. 2.0, 2006-10-10 Application Note No. 007 DECT (1.9 GHz) Transmit - Receive PIN-Diode Switch 1 DECT (1.9 GHz) Transmit - Receive PIN-Diode Switch DECT cordless telephones operate at frequencies between 1880 MHz and 1900 MHz. The TDMA system employed requires a non mechanical transmit-receive switch to connect the antenna to the receiver or transmitter in the required time slots. Due to the maximum EIRP of + 24 dBm this switch has to handle up to half a watt RFpower with sufficient isolation to the receiver input to avoid damage to the LNA. The PIN diode switch configuration shown here has the following advantages: • • • • No power consumption in receive state, only 3 - 10 mA in transmit state No negative voltage and no voltage > 2.7 V required Low component count Low cost AN007_PIN_Diode_switch_conf.vsd Figure 1 PIN diode switch configuration Table 1 Data measured on prototype board @ f = 1.89 GHz Transmit-state (I = +10 mA at + U-pin) Receive-state (U = 0... -3 V at +U-pin) TX-Ant. Loss 0.4 dB RX-Ant. Loss 0.45 dB TX-RX Isolation 26 dB TX-RX Isolation 13 dB RX-Ant. Isolation 24 dB TX-Ant. Isolation 19 dB Application Note 4 Rev. 2.0, 2006-10-10 Application Note No. 007 Harmonic Distortion Characteristics Measurements 2 Harmonic Distortion Characteristics Measurements 2.1 Measurement Setup TX-Port: 1.9 GHz, +27 dBm power, harmonics more than 100 dB down RX-Port: 50 Ω termination Ant.-Port: Spectrum analyzer +U-Pin: I = 5 mA and I = 10 mA 2.2 Results Harmonics referred to TX-Port input level (+27 dBm) 3.8 GHz: -87 dB @ I = 5 mA -92 dB @ I = 10 mA 5.7 GHz: > -100 dB @ I = 5 mA > -100 dB @ I = 10 mA Attention: All ports must be DC-blocked during measurements 2.3 Realization For practical realization, a printed circuit board on 1 mm Epoxy FR4 material was developed. Simulation has been performed with COMPACT SOFTWARE Microwave Harmonica PC V6.0. Board size: 36.0mm x 30.0mm Material: FR4 Epoxy, 1mm, Er=4.8 AN007_printed_circuit_board.vsd Figure 2 Printed circuit board: (scale: 1:1) Application Note 5 Rev. 2.0, 2006-10-10 Application Note No. 007 Harmonic Distortion Characteristics Measurements Ant. RX TX AN007_Com ponent_placem ent.vs Figure 3 Component placement Table 2 Part List BAR80 PIN diode MW-4 Infineon BAR63-03W PIN diode SOD323 Infineon 47 pF Cap. 0805 Epcos 470 pF Cap. 0805 Epcos 27 nH Ind. SIMID01 or SIMID02 Epcos Printed circuit board FR4, 1.0 mm Div. Application Note 6 Rev. 2.0, 2006-10-10 Application Note No. 007 Harmonic Distortion Characteristics Measurements 2.4 Simulation For simulation with Microwave Harmonica V6.0. the PIN-Switch structure is divided into several elements: AN Port T 2 2 T Port X 1 7 1 TR TR L W=W5 P=5m 0 m L W=W5 P=5 0m m 1 0 BAR6303W 2 0 ON E W=W5 P=0.5m 0 m C=0.28 4p F L=23.4n H 8 R=0. 8Ω 0 GND foronly RF ! 5 0 TR L W=W5 P=1m 0 m W= W5 P=00.5m m 0 W=W5 P=1 0 0m m TE E 4 3 0 W1=W5 0 0 100f F TR L W=WA P=L P L W2=WA 0 W3=W5 P 0 4 4 4 4 6 4 STE 5 2 STE 3 TR 0 P P TR L W=W W=1mL P=P W1 =WA P W2=W M LL=16.6m WAP=2.0m m W50=1.75m m WM=0.3m m PM=0. m 4m m M M W1 =W W2=1m M m P=0.5m m m BA R8 0 TW O W=1 m P=0.5 m m m 8 0 W=1m P=1 mm m 8 1 Subst rate FR4 H=1.0mm T=0.035mm ER=4.8 TAND=0.02 @ Material: 1.9GHz R Port X 3 100f F 7 7 7 7 3 STE 1 STE 2 TR 0 P P TR L W=W L m W=1 P=0.5m m m W1 =1m =W W2m M W=1m P=0.5m m m P=P M M W1 =W W2M=W5 0 3 TR L W=W5 P=5m 0 m W=1 m P=1m m m VI A 0 VI A 8 2 0 AN007_Several_PIN-S witch_Elements.vsd Figure 4 Several PIN-Switch elements for simulation with Microwave Harmonica These Elements must be placed into a description file: ****************************************************************** * INFINEON SMALL SIGNAL SEMICONDUCTORS * APPLICATION NOTE * DECT T/R-SWITCH WITH BAR80/BAR63-03W ****************************************************************** * ANT * PORT 2 * O * | * |\ | | +---------------------+ * TX O--| >|--O--| LAMBDA/4 |------O-----O RX * PORT 1 |/ | +---------------------+ | PORT 3 * BAR63 +-----+ * -03W \ / * BAR80 \ / * ---+--* | * -----+------ GND * SUBSTRATE MATERIAL: * FR4, H=1MM, T=0.035MM, ER=4.8, TAND=0.02 @ 1.9GHZ ****************************************************************** * 22.11.94 K. BRENNDOERFER DF8CA HL EH PD 1 ****************************************************************** AN007_Description_file_sim ulation.vsd Figure 5 Circuit design Simulation Application Note 7 Rev. 2.0, 2006-10-10 Application Note No. 007 Harmonic Distortion Characteristics Measurements LL: WAP: W50: WM: PM: 16.6MM 2.0MM 1.75MM 0.3MM 0.4MM BLK TRL TRL IND RES CAP OST ONE OST TRL TEE TRL TRL STEP TRL STEP TRL OST CAP TWO OST CAP VIA TRL VIA TRL TRL STEP TRL STEP TRL RXAN: END ; ; ; ; ; Length of quater lambda line Width of quater lambda line Width of 50 ohm line Width of match Width of match ; SWITCH IN RX-ANT ON, TX-ANT OFF STATE 1 7 W=W50 P=3MM SUB 7 10 W=W50 P=2MM SUB 7 8 L=23.4nH ; 8 0 R=0.8 ; 7 0 C=284fF ; 10 W=W50 P=0.5MM SUB 10 20 B63OF ; 20 W=W50 P=0.5MM SUB 20 30 W=W50 P=1MM SUB 30 40 50 W1=W50 W2=WAP W3=W50 SUB 50 2 W=W50 P=10MM SUB 40 42 W=WAP P=LL SUB 42 43 W1=WAP W2=WM SUB 43 44 W=WM P=PM SUB 44 45 W1=WM W2=1MM SUB 45 60 W=1MM P=0.5MM SUB 60 W=1MM P=0.5MM SUB 60 0 C=100fF 60 70 80 B80OF ; 70 W=1MM P=0.5MM SUB 70 0 C=100fF 81 D=0.6MM SUB 80 81 W=1MM P=1MM SUB 82 D=0.6MM SUB 80 82 W=1MM p=1MM SUB 70 71 W=1MM P=0.5MM SUB 71 72 W1=1MM W2=WM SUB 72 73 W=WM P=PM SUB 73 75 W1=WM W2=W50 SUB 75 3 W=W50 P=5MM SUB 3POR 1 2 3 ; Equivalent circuit 27nH SIMID01 induct in parallel resonan BAR63-03W OFF STATE BAR80 OFF STATE 1=TX 2=ANT 3=RX AN007_Description_file_sim ulation1.vsd Figure 6 Simulation Data 1 Application Note 8 Rev. 2.0, 2006-10-10 Application Note No. 007 Harmonic Distortion Characteristics Measurements BLK TRL TRL IND RES CAP OST ONE OST TRL TEE TRL TRL STEP TRL STEP TRL OST CAP TWO OST CAP VIA TRL VIA TRL TRL STEP TRL STEP TRL TXAN: END FREQ STEP END ; SWITCH IN RX-ANT OFF, TX-ANT ON STATE 1 7 W=W50 P=3MM SUB 7 10 W=W50 P=2MM SUB 7 8 L=23.4nH ; 8 0 R=0.8 ; 7 0 C=284fF ; 10 W=W50 P=0.5MM SUB 10 20 B63ON ; 20 W=W50 P=0.5MM SUB 20 30 W=W50 P=1MM SUB 30 40 50 W1=W50 W2=WAP W3=W50 SUB 50 2 W=W50 P=10MM SUB 40 42 W=WAP P=LL SUB 42 43 W1=WAP W2=WM SUB 43 44 W=WM P=PM SUB 44 45 45 60 60 60 0 60 70 80 70 70 0 81 80 81 82 80 82 70 71 71 72 72 73 73 75 75 3 3POR 1 2 100MHZ DATA SUB: MS H=1MM B80OF:DUMMY B80ON:DUMMY B63OF:DUMMY B63ON:DUMMY END W1=WM W=1MM W=1MM C=100fF B80ON W=1MM C=100fF D=0.6MM W=1MM D=0.6MM W=1MM W=1MM W1=1MM W=WM W1=WM W=W50 3 3GHZ ER=4.8 W2=1MM P=0.5MM P=0.5MM SUB SUB SUB P=0.5MM SUB Equivalent circuit 27nH SIMID01 induc in parallel resona BAR63-03W ON STATE ; BAR80 ON STATE P=1MM p=1MM P=0.5MM W2=WM P=PM W2=W50 P=5MM SUB SUB SUB SUB SUB SUB SUB SUB SUB ; 1=TX 2=ANT 3=RX 100MHZ TAND=0.02 MET1=CU 35UM FILE=A:\BAR80\MW1V0U00.S2P FILE=A:\BAR80\MWV003M0.S2P FILE=A:\BAR63-3W\AC1V0U00.S1P FILE=A:\BAR63-3W\ACV005M0.S1P AN007_Description_file_sim ulation2.vsd Figure 7 Simulation Data 2 Application Note 9 Rev. 2.0, 2006-10-10 Application Note No. 007 Harmonic Distortion Characteristics Measurements Notes: • • • • Simulation of the bias inductance was done by selecting a value which is parallel resonant at 1.85 GHz and then optimizing a equivalent circuit to the same performance. The circuit can be found in the circuit file. The S-Parameter-file accessed in the DATA-block can be found on the INFINEON CD which is available at your local INFINEON distributor or sales office. The BAR63-03W files are one-port files (S1P) which are used as two port data, the BAR80 S-parameters are two-port files (S2P) which are used as three-port data for additional simulation of the ground inductance. The 47 pF and 470 pF blocking capacitors are not simulated, they are replaced by a SHORT. In practice, the SMD-capacitors should be 0805 type and for blocking, 47 pF is recommended, because this value is nearly in series resonance at 1.9 GHz. The simulation shows the following results: 22-NOV-94 COMPACT SOFTWARE - MICROWAVE HARMONICA PC V6.0 File: a:\dect-ap1.ckt 15:07:29 SIEMENS DECT PIN-Switch with BAR80 / BAR63-03W MS21 [dB] RXAN MS31 [dB] RXAN MS32 [dB] RXAN 0.00 -0.00 -5.00 -0.50 RX-A nt. -10.00 -1.00 TX- Ant . -15.00 -1.50 RX-TX -20.00 -2.00 -25.00 -2.50 -30.00 1.5 -3.00 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 Freq [GHz] AN007_Sim ulation_results_receive_state.vsd Figure 8 Simulation results, receive state (U = 0...-3 V) Application Note 10 Rev. 2.0, 2006-10-10 Application Note No. 007 Harmonic Distortion Characteristics Measurements 22-NOV-94 COMPACT SOFTWARE - MICROWAVE HARMONICA PC V6.0 File: a:\dect-ap1.ckt 15:25:10 SIEMENS DECT PIN-Switch with BAR80 / BAR63-03W MS32 [dB] TXAN MS31 [dB] TXAN 0.00 MS21 [dB] TXAN -0.00 T X-Ant -5.00 -0.50 -10.00 -1.00 -15.00 -1.50 R X-Ant. -20.00 -2.00 R X-TX -25.00 -30.00 1.5 -2.50 -3.00 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 Freq [GHz] AN007_Sim ulation_results_transm it_state.vsd Figure 9 Simulation results, transmit state (I = +10 mA) Application Note 11 Rev. 2.0, 2006-10-10