S-LSI1012XT1G LSI1012XT1G

LESHAN RADIO COMPANY, LTD.
LSI1012XT1G
S-LSI1012XT1G
N-Channel 1.8-V (G-S) MOSFET
FEATURES
D
D
D
D
D
D
D
TrenchFETr Power MOSFET: 1.8-V Rated
Gate-Source ESD Protected: 2000 V
High-Side Switching
Low On-Resistance: 0.7 W
Low Threshold: 0.8 V (typ)
Fast Switching Speed: 10 ns
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SC-89
BENEFITS
D
D
D
D
D
Gate
1
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
3
Source
APPLICATIONS
2
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
(Top View)
MARKING DIAGRAM
3
Device
Marking
Shipping
LSI1012XT1G
S-LSI1012XT1G
LSI1012XT3G
S-LSI1012XT3G
A
3000/Tape&Reel
A
10000/Tape&Reel
A
1
M
ORDERING INFORMATION
2
A = Specific Device Code
M = Month Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"6
Continuous Drain Current (TJ = 150_C)b
TA = 25_C
TA = 85_C
Pulsed Drain Currenta
Maximum Power Dissipationb for SC-75
SC 75
Maximum Power
for SC-89
SC 89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
IS
V
500
600
400
IDM
Continuous Source Current (diode conduction)b
Dissipationb
ID
350
1000
275
250
TA = 25_C
175
150
TA = 85_C
90
80
275
250
160
140
TA = 25_C
PD
TA = 85_C
Unit
mA
mW
TJ, Tstg
−55 to 150
_C
ESD
2000
V
Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.
Rev .O 1/6
Drain
LESHAN RADIO COMPANY, LTD.
LSI1012XT1G , S-LSI1012XT1G
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
0.45
Typ
Max
Unit
0.9
V
"0.5
"1.0
mA
0.3
100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
rDS(on)
VDS = 0 V, VGS = "4.5 V
VDS = 20 V, VGS = 0 V
5
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
700
mA
mA
VGS = 4.5 V, ID = 600 mA
0.41
0.70
VGS = 2.5 V, ID = 500 m A
0.53
0.85
1.25
VGS = 1.8 V, ID = 350 m A
0.70
gfs
VDS = 10 V, ID = 400 mA
1.0
VSD
IS = 150 mA, VGS = 0 V
0.8
W
S
1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
750
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
75
Gate-Drain Charge
Qgd
225
Turn-On Delay Time
td(on)
5
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
VDD = 10 V, RL = 47 W
ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W
5
25
pC
ns
11
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Rev .O 2/6
LESHAN RADIO COMPANY, LTD.
LSI1012XT1G , S-LSI1012XT1G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1200
1.0
TC = −55_C
1000
VGS = 5 thru 1.8 V
ID - Drain Current (mA)
I D − Drain Current (A)
0.8
0.6
0.4
0.2
25_C
800
125_C
600
400
200
1V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
VDS − Drain-to-Source Voltage (V)
1.0
3.2
80
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
100
2.4
1.6
VGS = 1.8 V
VGS = 4.5 V
200
400
600
800
Ciss
60
40
Coss
20
VGS = 2.5 V
0
Crss
0
1000
0
4
ID − Drain Current (mA)
Gate Charge
12
16
20
On-Resistance vs. Junction Temperature
1.60
VDS = 10 V
ID = 250 mA
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
8
VDS − Drain-to-Source Voltage (V)
5
4
3
2
1
0
0.0
2.5
Capacitance
4.0
0.0
2.0
VGS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.8
1.5
1.40
VGS = 4.5 V
ID = 600 mA
1.20
VGS = 1.8 V
ID = 350 mA
1.00
0.80
0.2
0.4
0.6
Qg − Total Gate Charge (nC)
0.8
0.60
−50
−25
0
25
50
75
100
TJ − Junction Temperature (_C)
Rev .O 3/6
125
LESHAN RADIO COMPANY, LTD.
LSI1012XT1G , S-LSI1012XT1G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
5
1000
100
TJ = 25_C
TJ = −55_C
10
1
0.0
4
r DS(on) − On-Resistance ( W )
I S − Source Current (mA)
TJ = 125_C
ID = 350 mA
3
ID = 200 mA
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
1
VSD − Source-to-Drain Voltage (V)
Threshold Voltage Variance vs. Temperature
3
4
5
6
IGSS vs. Temperature
0.3
3.0
0.2
2.5
ID = 0.25 mA
2.0
IGSS − (mA)
0.1
−0.0
1.5
−0.1
1.0
−0.2
0.5
VGS = 4.5 V
−0.3
−50
−25
0
25
50
75
100
0.0
−50
125
−25
TJ − Temperature (_C)
0
25
50
75
100
TJ − Temperature (_C)
BVGSS vs. Temperature
BVGSS − Gate-to-Source Breakdown Voltage (V)
V GS(th) Variance (V)
2
VGS − Gate-to-Source Voltage (V)
7
6
5
4
3
2
1
0
−50
−25
0
25
50
75
100
125
T − Temperature (_C)
Rev .O 4/6
125
LESHAN RADIO COMPANY, LTD.
LSI1012XT1G , S-LSI1012XT1G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 833_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Rev .O 5/6
LESHAN RADIO COMPANY, LTD.
LSI1012XT1G , S-LSI1012XT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
Rev .O 6/6