TP0202K Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) −30 30 rDS(on) () VGS(th) (V) ID (mA) 1.4 @ VGS = −10 V −1.3 to −3.0 −385 3.5 @ VGS = −4.5 V −1.3 to −3.0 −240 FEATURES D D D D D D Qg (Typ) 1000 BENEFITS High-Side Switching Low On-Resistance: 1.2 Ω (typ) Low Threshold: −2.0 V (typ) Fast Swtiching Speed: 14 ns (typ) Low Input Capacitance: 31 pF (typ) Gate-Source ESD Protection D D D D D APPLICATIONS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply Converter Circuits D Solid State Relays TO-236 (SOT-23) G 1 Ordering Information: TP0202K-T1 TP0202K-T1—E3 (Lead (Pb)-Free) 3 S D Marking Code: 2Kwll 2 2K = Part Number Code for TP0202K w = Week Code ll = Lot Traceability Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS −30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulse Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range ID IDM TA = 25_C TA = 85_C PD Unit V −385 −280 mA −750 350 185 mW RthJA 350 _C/W TJ, Tstg −55 to 150 _C Notes a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71609 S-41777—Rev. D, 04-Oct-04 www.vishay.com 1 TP0202K Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate Body Leakage Gate-Body V(BR)DSS VGS = 0 V, ID = −100 A −30 −38 VGS(th) VDS = VGS, ID = −250 A −1.3 −2 IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltagea −3.0 VDS = 0 V, VGS = "5 V "50 VDS = 0 V, VGS = "10 V "300 VDS = −30 V, VGS = 0 V −100 −10 VDS = −30 V, VGS = 0 V, TJ = 85_C VDS = −10 V, VGS = −10 V −500 nA A mA VGS = −4.5 V, ID = −50 mA 2.1 3.5 VGS = −10 V, ID = −500 mA 1.25 1.4 gfs VDS = −5 V, ID = −200 mA 315 VSD IS = −250 mA, VGS = 0 V rDS(on) DS( ) V mS −1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs 1000 VDS = −16 V, VGS = −10 V, ID ^ −200 mA 225 Gate-Drain Charge Qgd 175 Input Capacitance Ciss 31 Output Capacitance Coss Reverse Transfer Capacitance Crss 4 td(on) 9 VDS = −15 V, VGS = 0 V, f = 1 MHz 11 pC p pF p Switchingb Turn On Time Turn-On Turn Off Time Turn-Off tr td(off) VDD = −15 15 V, RL = 75 ID ^ −200 mA, VGEN = −10 V, RG = 6 tf 6 30 ns 20 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71609 S-41777—Rev. D, 04-Oct-04 TP0202K Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Output Characteristics Transfer Characteristics 1.6 VGS = 10 V 5.5 V 8V 1.2 5V 7V 1.0 1000 I D − Drain Current (mA) I D − Drain Current (A) 1.4 1200 6V 4.5 V 0.8 4V 0.6 3.5 V 0.4 3V TJ = −55_C 800 25_C 600 125_C 400 200 0.2 0.0 0 0 1 2 3 4 0 5 1 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage 4 5 6 On-Resistance vs. Drain Current 14 r DS(on) − On-Resistance ( ) r DS(on) − On-Resistance ( ) 3 VGS − Gate-to-Source Voltage (V) 20 16 VGS = 4.5 V 12 VGS = 10 V 8 4 0 12 10 8 6 4 VGS = 4.5 V VGS = 10 V 2 0 0 4 8 12 16 20 0 200 VGS − Gate -to-Source Voltage (V) 400 V GS − Gate-to-Source Voltage (V) Ciss 30 20 Coss 10 Crss 8 12 ID = 200 mA 14 12 VDS = 16 V 10 8 VDS = 10 V 6 4 2 0 16 VDS − Drain-to-Source Voltage (V) Document Number: 71609 S-41777—Rev. D, 04-Oct-04 1000 Gate Charge 40 4 800 16 VGS = 0 V f = 1 MHz 0 600 ID − Drain Current (mA) Capacitance 50 C − Capacitance (pF) 2 20 0 0 200 400 600 800 1000 1200 1400 1600 Qg − Total Gate Charge (pC) www.vishay.com 3 TP0202K Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. On-Resistance vs. Junction Temperature 1.8 Source-Drain Diode Forward Voltage 1000 VGS = 0 V 1.4 VGS = 10 V @ 200 mA I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 1.6 1.2 1.0 VGS = 4.5 V @ 50 mA 0.8 0.6 0.4 100 TJ = 150_C TJ = 25_C 10 TJ = −55_C 0.2 0.0 −50 0.5 1 −25 150 0.00 Threshold Voltage Variance Over Temperature 0.4 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) 1.5 IGSS vs. Temperature 1000 VGS = 10 V ID = 250 A 0.3 I GSS − (nA) V GS(th) Variance (V) 0 25 50 75 100 125 TJ − Junction Temperature (_C) 0.2 0.1 100 VGS = 5 V −0.0 10 −0.1 −0.2 −0.3 −50 1 −25 0 25 50 75 100 125 150 25 TJ − Junction Temperature (_C) Normalized Effective Transient Thermal Impedance 75 100 125 TJ − Junction Temperature (_C) 150 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 50 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 350_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71609. www.vishay.com 4 Document Number: 71609 S-41777—Rev. D, 04-Oct-04