Transistor IC DIP SMDType Type Product specification A42 TO-92 Unit: mm +0.25 4.58 –0.15 ■ Features 4.58 ±0.20 ● Epitaxial planar die construction. ● Ideal for medium power amplification and switching. ● Complementary PNP type available (A92). ±0.10 1.27TYP [1.27 ±0.20] 14.47 ±0.40 0.46 1 2 3 1. Emitter 2. Base 3. Collector (0.25) +0.10 0.38 –0.05 1.02 ±0.10 0.38 –0.05 ±0.20 3.86MAX 3.60 +0.10 1.27TYP [1.27 ±0.20] (R2.29) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO Ic= 100 μA， IE=0 300 Collector-to-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 300 V Emitter-to-base breakdown voltage V(BR)EBO IE= 100 μA， IC=0 5 V Collector cut-off current IcBO VCB= 200 V , IE=0 Emitter cut-off current IEBO VEB= 5V , IC=0 DC current gain hFE VCE= 10V, IC= 1mA 60 VCE= 10V, IC= 10mA 80 VCE= 10V, IC= 30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB= 2mA Transition frequency fT VCE= 20V, IC= 10mA,f=30MHz V 0.25 μA 0.1 μA 250 0.2 0.9 50 V V MHz ■ hFE Classification Rank A B1 B2 C hFE 80 to 100 100 to 150 150 to 200 200 to 250 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 IC Transistors Transistor IC SMD Type DIP DIP SMDType Type Type Product specification A42 ■ Typical Characteristics http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Transistors IC DIP SMDType Type Product specification A42 ■ Typical Characteristics http://www.twtysemi.com [email protected] 4008-318-123 3 of 3