S-LSI1013LT1G LSI1013LT1G

LESHAN RADIO COMPANY, LTD.
LSI1013LT1G
S-LSI1013LT1G
P-Channel 1.8-V (G-S) MOSFET
FEATURES
D
D
D
D
D
D
D
3
TrenchFETr Power MOSFET: 1.8-V Rated
Gate-Source ESD Protected: 2000 V
High-Side Switching
Low On-Resistance: 1.2 W
Low Threshold: 0.8 V (typ)
Fast Switching Speed: 14 ns
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
2
SOT-23
BENEFITS
D
D
D
D
D
Gate
1
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
3
Source
2
APPLICATIONS
(Top View)
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
MARKING DIAGRAM
3
Marking
Shipping
LSI1013LT1G
S-LSI1013LT1G
LSI1013LT3G
S-LSI1013LT3G
A1
3000/Tape&Reel
A1
10000/Tape&Reel
A1
1
M
ORDERING INFORMATION
Device
2
A1 = Specific Device Code
M = Month Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
"6
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (diode conduction)b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
ID
IS
PD
V
-350
-400
-300
IDM
Unit
-275
-1000
-275
mA
-250
225
mW
TJ, Tstg
−55 to 150
_C
ESD
2000
V
Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.
Rev .O 1/6
Drain
LESHAN RADIO COMPANY, LTD.
LSI1013LT1G , S-LSI1013LT1G
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = –250 mA
–0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Diode Forward
Voltagea
V
VDS = 0 V, VGS = "4.5 V
"1
"2
mA
VDS = –16 V, VGS = 0 V
–0.3
–100
nA
–5
VDS = –16 V, VGS = 0 V, TJ = 85_C
VDS = –5 V, VGS = –4.5 V
–700
mA
mA
VGS = –4.5 V, ID = –350 mA
0.8
1.2
VGS = –2.5 V, ID = –300 m A
1.2
1.6
VGS = –1.8 V, ID = –10 m A
1.8
2.7
gfs
VDS = –10 V, ID = –250 mA
0.4
VSD
IS = –150 mA, VGS = 0 V
–0.8
W
S
–1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
450
Turn-On Delay Time
td(on)
5
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
1500
VDS = –10 V, VGS = –4.5 V, ID = –250 mA
VDD = –10 V, RL = 47 W
ID ^ –200 mA, VGEN = –4.5 V, RG = 10 W
150
pC
9
35
ns
11
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Rev .O 2/6
LESHAN RADIO COMPANY, LTD.
LSI1013LT1G , S-LSI1013LT1G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Output Characteristics
Transfer Characteristics
1.0
1000
VGS = 5 thru 3 V
TJ = –55_C
2.5 V
25_C
800
I D – Drain Current (mA)
I D – Drain Current (A)
0.8
0.6
2V
0.4
1.8 V
0.2
600
125_C
400
200
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
VDS – Drain-to-Source Voltage (V)
1.0
2.5
3.0
Capacitance
4.0
120
100
3.2
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
2.0
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 1.8 V
2.4
VGS = 2.5 V
1.6
VGS = 4.5 V
Ciss
80
60
40
Coss
0.8
20
0.0
Crss
0
0
200
400
600
800
1000
0
4
ID – Drain Current (mA)
Gate Charge
12
16
20
On-Resistance vs. Junction Temperature
1.6
r DS(on) – On-Resistance ( W)
(Normalized)
VDS = 10 V
ID = 250 mA
4
3
2
1
0
0.0
8
VDS – Drain-to-Source Voltage (V)
5
V GS – Gate-to-Source Voltage (V)
1.5
1.4
VGS = 4.5 V
ID = 350 mA
1.2
VGS = 1.8 V
ID = 150 mA
1.0
0.8
0.2
0.4
0.6
0.8
1.0
1.2
Qg – Total Gate Charge (nC)
1.4
1.6
0.6
–50
–25
0
25
50
75
100
TJ – Junction Temperature_( C)
Rev .O 3/6
125
LESHAN RADIO COMPANY, LTD.
LSI1013LT1G , S-LSI1013LT1G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
5
TJ = 125_C
r DS(on) – On-Resistance ( W )
IS – Source Current (mA)
1000
100
TJ = 25_C
TJ = –55_C
10
1
0.0
4
3
ID = 350 mA
2
ID = 200 mA
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
VSD – Source-to-Drain Voltage (V)
Threshold Voltage Variance vs. Temperature
3
4
5
6
IGSS vs. Temperature
0.3
3.0
0.2
2.5
ID = 0.25 mA
2.0
IGSS – (mA)
0.1
–0.0
1.5
–0.1
1.0
–0.2
0.5
–0.3
–50
–25
0
25
50
75
100
0.0
–50
125
VGS = 4.5 V
–25
TJ – Temperature (_C)
0
25
50
75
100
125
TJ – Temperature (_C)
BVGSS vs. Temperature
BVGSS – Gate-to-Source Breakdown Voltage (V)
V GS(th) Variance (V)
2
VGS – Gate-to-Source Voltage (V)
7
6
5
4
3
2
1
0
–50
–25
0
25
50
75
100
125
TJ – Temperature (_C)
Rev .O 4/6
LESHAN RADIO COMPANY, LTD.
LSI1013LT1G , S-LSI1013LT1G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA =833_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Rev .O 5/6
LESHAN RADIO COMPANY, LTD.
LSI1013LT1G , S-LSI1013LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 6/6