Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 8 @ VGS = –4.5 V –150 12 @ VGS = –2.5 V –125 15 @ VGS = –1.8 V –100 20 @ VGS = –1.5 V –30 1.5ĆV Rated FEATURES BENEFITS APPLICATIONS D Very Small Footprint D High-Side Switching D Low On-Resistance: N-Channel, 5 W P-Channel, 8 W D Low Threshold: "0.9 V (typ) D Fast Switching Speed: 45 ns (typ) D 1.5-V Operation D Gate-Source ESD Protection D D D D D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: M Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 85_C Pulsed Drain Currentb IS TA = 25_C TA = 85_C Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) PD Steady State 5 secs 20 Steady State Unit –20 V "5 190 180 –155 140 130 –110 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 5 secs P-Channel 650 –145 –105 mA –650 450 380 –450 –380 280 250 280 250 145 130 145 130 mW TJ, Tstg –55 to 150 _C ESD 2000 V Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71426 S-03201—Rev. A, 12-Mar-01 www.vishay.com 1 Si1035X New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA N-Ch 0.40 VDS = VGS, ID = –250 mA P-Ch –0.40 VDS = 0 V, VGS = "2.8 " V Gate-Body Leakage IGSS VDS = 0 V, VGS = "4.5 " V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS ID(on) rDS(on) gfs VSD V N-Ch "0.5 "1.0 P-Ch "0.5 "1.0 N-Ch "1.5 "3.0 P-Ch "1.0 "3.0 VDS = 16 V, VGS = 0 V N-Ch 1 500 VDS = –16 V, VGS = 0 V P-Ch –1 –500 VDS = 16 V, VGS = 0 V, TJ = 85_C N-Ch 10 VDS = –16 V, VGS = 0 V, TJ = 85_C P-Ch –10 VDS = 5 V, VGS = 4.5 V N-Ch 250 VDS = –5 V, VGS = –4.5 V P-Ch –200 m mA nA m mA mA VGS = 4.5 V, ID = 200 mA N-Ch 5 VGS = –4.5 V, ID = –150 mA P-Ch 8 VGS = 2.5 V, ID = 175 mA N-Ch 7 VGS = –2.5 V, ID = –125 mA P-Ch 12 VGS = 1.8 V, ID = 150 mA N-Ch 9 VGS = –1.8 V, ID = –100 mA P-Ch 15 VGS = 1.5 V, ID = 40 mA N-Ch 10 VGS = –1.5 V, ID = –30 mA P-Ch 20 VDS = 10 V, ID = 200 mA N-Ch 0.5 VDS = –10 V, ID = –150 mA P-Ch 0.4 IS = 150 mA, VGS = 0 V N-Ch 1.2 IS = –150 mA, VGS = 0 V P-Ch –1.2 W S V Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 150 mA Gate-Source Charge Gate-Drain Charge Turn-On Time Qgs P-Channel VDS = –10 V, VGS = –4.5 V, ID = –150 mA Qgd N-Ch 750 P-Ch 1500 N-Ch 75 P-Ch 150 N-Ch 225 P-Ch 450 pC N-Ch 75 tON N-Channel VDD = 10 V, RL = 47 W ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W P-Ch 80 N-Ch 75 tOFF P-Channel VDD = –10 V, RL = 65 W ID ^ –150 A, VGEN = –4.5 V, RG = 10 W P-Ch 90 ns Turn-Off Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71426 S-03201—Rev. A, 12-Mar-01 Si1035X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) NĆCHANNEL Output Characteristics Transfer Characteristics 0.5 600 TJ = –55_C VGS = 5 thru 1.8 V 500 I D – Drain Current (mA) I D – Drain Current (A) 0.4 0.3 0.2 25_C 400 125_C 300 200 0.1 100 1V 0.0 0 1 2 3 4 5 0 0.0 6 0.5 VDS – Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.5 Capacitance 100 VGS = 0 V f = 1 MHz 80 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 2.0 VGS – Gate-to-Source Voltage (V) 40 30 20 VGS = 1.8 V Ciss 60 40 10 Coss 20 VGS = 2.5 V VGS = 4.5 V 0 Crss 0 0 50 100 150 200 250 0 4 ID – Drain Current (mA) Gate Charge 12 16 20 On-Resistance vs. Junction Temperature 1.60 r DS(on) – On-Resistance ( W) (Normalized) VDS = 10 V ID = 150 mA 1.40 4 VGS = 4.5 V ID = 200 mA 1.20 3 VGS = 1.8 V ID = 175 mA 1.00 2 0.80 1 0 0.0 8 VDS – Drain-to-Source Voltage (V) 5 V GS – Gate-to-Source Voltage (V) 1.5 0.2 0.4 0.6 Qg – Total Gate Charge (nC) Document Number: 71426 S-03201—Rev. A, 12-Mar-01 0.8 0.60 –50 –25 0 25 50 75 100 125 TJ – Junction Temperature (_C) www.vishay.com 3 Si1035X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) NĆCHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 1000 ID = 200 mA 100 TJ = 25_C TJ = 50_C 10 1 0.0 40 r DS(on) – On-Resistance ( W ) I S – Source Current (mA) TJ = 125_C ID = 175 mA 30 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 VSD – Source-to-Drain Voltage (V) Threshold Voltage Variance vs. Temperature 4 5 6 IGSS vs. Temperature 0.3 3.0 0.2 2.5 ID = 0.25 mA 0.1 2.0 IGSS – (mA) V GS(th) Variance (V) 3 VGS – Gate-to-Source Voltage (V) –0.0 1.5 –0.1 1.0 VGS = 2.8 V –0.2 –0.3 –50 0.5 –25 0 25 50 75 100 0.0 –50 125 –25 TJ – Temperature (_C) 0 25 50 75 100 125 TJ – Temperature (_C) BVGSS – Gate-to-Source Breakdown Voltage (V) BVGSS vs. Temperature 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) www.vishay.com 4 Document Number: 71426 S-03201—Rev. A, 12-Mar-01 Si1035X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) PĆCHANNEL Output Characteristics Transfer Characteristics 0.5 500 2V VGS = 5 thru 2.5 V TJ = –55_C 25_C 400 I D – Drain Current (mA) I D – Drain Current (A) 0.4 1.8 V 0.3 0.2 0.1 300 125_C 200 100 0.0 0 1 2 3 4 5 0 0.0 6 0.5 VDS – Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.5 3.0 Capacitance 120 VGS = 1.8 V VGS = 0 V f = 1 MHz 100 20 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 2.0 VGS – Gate-to-Source Voltage (V) 25 15 VGS = 2.5 V 10 Ciss 80 60 40 VGS = 4.5 V Coss 5 20 0 Crss 0 0 200 400 600 800 1000 0 4 ID – Drain Current (mA) Gate Charge 12 16 20 On-Resistance vs. Junction Temperature 1.6 r DS(on) – On-Resistance ( W) (Normalized) VDS = 10 V ID = 150 mA 4 3 2 1 0 0.0 8 VDS – Drain-to-Source Voltage (V) 5 V GS – Gate-to-Source Voltage (V) 1.5 1.4 VGS = 4.5 V ID = 150 mA 1.2 VGS = 1.8 V ID = 125 mA 1.0 0.8 0.2 0.4 0.6 0.8 1.0 1.2 Qg – Total Gate Charge (nC) Document Number: 71426 S-03201—Rev. A, 12-Mar-01 1.4 1.6 0.6 –50 –25 0 25 50 75 100 125 TJ – Junction Temperature (_C) www.vishay.com 5 Si1035X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 1000 TJ = 125_C 40 r DS(on) – On-Resistance ( W ) IS – Source Current (mA) PĆCHANNEL 100 TJ = 25_C TJ = –55_C 10 ID = 150 mA 30 20 10 ID = 125 mA 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD – Source-to-Drain Voltage (V) Threshold Voltage Variance vs. Temperature 3 4 5 6 IGSS vs. Temperature 0.3 3.0 0.2 2.5 ID = 0.25 mA 0.1 2.0 IGSS – (mA) V GS(th) Variance (V) 2 VGS – Gate-to-Source Voltage (V) –0.0 –0.1 1.0 –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 0.0 –50 125 VGS = 2.8 V 1.5 –25 0 TJ – Temperature (_C) 25 50 75 100 125 TJ – Temperature (_C) BVGSS – Gate-to-Source Breakdown Voltage (V) BVGSS vs. Temperature 0 –1 –2 –3 –4 –5 –6 –7 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) www.vishay.com 6 Document Number: 71426 S-03201—Rev. A, 12-Mar-01 Si1035X New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) NĆ OR PĆCHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =500_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 Document Number: 71426 S-03201—Rev. A, 12-Mar-01 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 7