2N4854U SURFACE MOUNT NPN/PNP COMPLEMENTARY

2N4854U
Mii
SURFACE MOUNT NPN/PNP
COMPLEMENTARY TRANSISTORS
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Applications:
•
•
•
•
•
•
•
•
6 Pin LCC package
Rugged package – able to withstand high
acceleration load
Hermetically sealed
MIL-S-19500/421 screening available
Power supply control circuits
Totem pole drivers
Medical – high reliability
Military – dense packaging
DESCRIPTION
The 2N4854U is a hermetically sealed, ceramic surface mount, complementary transistor pair. This device consists of a NPN
transistor die and a PNP transistor die. The miniature 6 pin ceramic package is ideal for designs where board space and
device weight are important design considerations.
NOTE: Micropac is not listed on QPL at this time.
ABSOLUTE MAXIMUM RATINGS
NPN to PNP Isolation Voltage ....................................................................................................................................... 500 V DC
Collector-Base Voltage ............................................................................................................................................................60 V
Collector-Emitter Voltage.........................................................................................................................................................40 V
Emitter-Base Voltage..............................................................................................................................................................5.0 V
Collector Current - Continuous ...........................................................................................................................................600 mA
Operating Temperature ........................................................................................................................................-65°C to +200°C
Storage Temperature ...........................................................................................................................................-65°C to +200°C
Power Dissipation @ T = 25°C ........................................................................................................................................0.60W 1/
Maximum Junction Temperature........................................................................................................................................+200°C
Soldering Temperature (vapor phase reflow for 30 sec)...................................................................................................... 215°C
Notes:
1. Derate linearly @ 2.85mw/°C for TA > 25°C.
Package Dimensions
Schematic Diagram
A
.250 [6.35]
.240 [6.10]
0.080 [2.03]
0.066 [1.68]
PIN 1
.175 [4.44]
.165 [4.19]
IDENTIFIER
0.028 [0.71]
0.022 [0.56]
0.098 [2.49]
0.082 [2.08]
COLLECTOR
4
1
COLLECTOR
0.055 [1.40]
0.045 [1.14]
2
3
1
4
6
5
0.105 [2.67]
0.095 [2.41]
EMITTER
0.070 [1.78]
0.060 [1.53]
6
BASE
2
3
BASE
5
EMITTER
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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2N4854U
SURFACE MOUNT NPN/PNP COMPLEMENTARY TRANSISTORS
OPTICAL/ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise noted.
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
SYMBOL
V
V
V
I
I
I
(BR)CBO
(BR)CEO
(BR)EBO
MIN
MAX
60
40
5.0
10
10
10
CBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Forward Current Transfer
Ratio
Open Circuit Output Capacitance
Turn-On Time
Turn-Off Time
EBO
hfθ
50
35
50
75
100
35
12
300
VCE(SAT)
VBE(SAT)
hfθ
TEST CONDITIONS
V
I =10µA, I =0
I =10 mA, I =0
I =10µA, I =0
VCB = 50V, I =0
VCB = 50V, I =0, TA = 150°C
V =3.0V, I = 0
V =1V, I =150mA 3/
V =10V, I = 0.1mA
V =10V, I = 1.0mA
V =10V, I = 10mA
V =10V, I = 150mA 3/
V =10V, I = 500mA 3/
V =10V, I = 10mA, @-55°C
I =150mA, I = 15mA 3/
I =150mA, I =15mA 3/
V =10V, I = 1.0mA, f=1.0kHZ
V =20V, I = 20mA, f=100kHZ
C
V
V
CBO
Emitter-Base Cutoff Current
Forward-Current Transfer Ratio
UNITS
0.80
60
2.0
C
t
t
obo
on
off
8.0
35
300
pF
ns
ns
C
E
E
EB
V
V
-
B
E
nA
µA
NA
0.40
1.20
300
8.0
E
C
C
CE
C
CE
C
CE
C
CE
C
CE
C
CE
C
CE
C
C
B
C
B
CE
C
CE
C
V =10V, I00kHz < f < 1.0MHz
V =30V, I = 150mA, l =15 mA
V =30V, I = 150mA, l = l =15 mA
CB
CC
CC
C
C
B1
B1
B2
Note:
1.
Polarities given are for the NPN device. Reverse polarity on limits and conditions as applicable for the PNP side.
2.
Pulse width < 300µs, Duty Cycle < 2.0%.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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