(npn) transistor to-18 package (2n2369)

61114
GENERAL PURPOSE (NPN) TRANSISTOR
TO-18 PACKAGE (2N2369)
Features:
Applications
•
•
•
•
•
•
•
Hermetically sealed
Hermetically sealed TO-18
MIL-PRF-19500
screening
available
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Analog Switches
Signal Conditioning
Small Signal Amplifiers
High Density Packaging
DESCRIPTION
The 61114 is a N-P-N, general-purpose switching and amplifier transistor in a TO-18 metal can package. All packages are hermetically
sealed for high reliability and harsh environments. This device is available custom binned to customer specifications in commercial or
screened to MIL-PRF-19500 up to JANS level.
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage-VCBO.......................………...............................................................................................…….....................40Vdc
Collector-Emitter Voltage-VCEO..............................................................................................................................…….....................15Vdc
Collector-Emitter Voltage-VCES ..............................…….......... .........................................................................................................40Vdc
Emitter-Base Voltage-VEBO …………………………………………………………………………………………………………………4.5Vdc
Collector Current-IC(PeaK)…………………………………………………………………………………………………………………....500mA
Continuous Collector Current.........................……...........................................................................................................................200mA
Maximum Junction Temperature..........................................................……...................................................................................+200°C
Operating Temperature (See part selection guide for actual operating temperature).....…............................................ -65°C to +125°C
Storage Temperature.....................................................................................................……........................................... -65°C to +200°C
Lead Soldering Temperature (vapor phase reflow for 30 seconds)............................……..............................................................215°C
Package Dimensions
Schematic Diagram
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
E-MAIL: optosales@micropac.com
7-4
61114
NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2369)
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
SYMBOL
MIN
UNITS
TEST CONDITIONS
Collector-Base Breakdown Voltage
PARAMETER
BVCBO
40
Vdc
I C = 10µA, IE = 0
Collector-Emitter Breakdown Voltage
BVCEO
40
Vdc
I C = 10µA, IB = 0µA
Collector-Emitter Sustaining Voltage
BVCES
15
Vdc
I C = 10mA, IB = 0µA
Emitter-Base Breakdown Voltage
BVEBO
4.5
Vdc
I C = 0, IE = 10µA
0.4
µA
VCB = 20V, IE = 0
30
µA
VCB = 20V, IE = 0, TA = 150°C
0.4
µA
VCE = 20V
120
-
VCE = 1V, IC = 10mA
Collector-Base Cutoff Current
TYP
MAX
ICBO
Collector-Emitter Cutoff Current
ICES
Forward-Current Transfer Ratio
hfe
--
hfe
20
-
VCE = 1V, IC = 100mA
hfe
20
-
VCE = 2V, IC = 100mA
hfe4
20
-
VCE = 1V, IC = 10mA @ -55°C
hfe6
30
-
VCE = 0.35V, IC = 10mA @ -55°C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE (SAT)
0.20
V
I C = 10mA, IB = 1mA
VCE (SAT)
0.30
V
I C = 10mA, IB = 1mA @ +125°C
VCE (SAT)
0.25
V
I C = 30mA, IB = 3mA
VCE (SAT)
0.50
V
I C = 100mA, IB = 10mA
VBE (SAT)
0.7
0.85
V
I C = 10mA, IB = 1mA
VBE (SAT)
0.59
--
V
I C = 10mA, IB = 1mA @ +125°C
1.02
V
I C = 10mA, IB = 1mA @ -55°C
1.15
V
I C = 30mA, IB = 3mA
1.60
V
I C = 100mA, IE = 10mA
MHz
VCB = 10V, 100kHz, < f < 1 MHz
VBE (SAT)
VBE (SAT)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain---Bandwidth Product
fT
500
CIBO
25
pF
VEB = 0.5 V, 100kHz, < f < 1 MHz
Turn-On Time
ton
35
nS
Turn-Off Time
toff
300
nS
VCC = 30V, IC = 150mA,
IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Input Capacitance (Output Open Capacitance)
NOTES:
1.
Pulse width < 300µS, duty cycle < 2.0%.
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
2N2369 PNP transistor, commercial version
2N2369A PNP transistor, JAN level screening
2N2369A PNP transistor, JANTX level screening
2N2369A PNP transistor, JANTXV level screening
2N2369A PNP transistor, JANS level screening
NOTE: Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
E-MAIL: optosales@micropac.com
7-5
NOTE
1