Date:- 13 May, 2003 Data Sheet Issue:- 1 Distributed Gate Thyristor Type R3370ZC10# to R3370ZC12# Old Type No.: R1200CH10-12 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 1000-1200 V VDSM Non-repetitive peak off-state voltage, (note 1) 1000-1200 V VRRM Repetitive peak reverse voltage, (note 1) 1000-1200 V VRSM Non-repetitive peak reverse voltage, (note 1) 1100-1300 V MAXIMUM LIMITS UNITS OTHER RATINGS IT(AV)M Maximum mean on-state current, Tsink=55°C, (note 2) 3370 A IT(AV)M Maximum mean on-state current. Tsink=85°C, (note 2) 2145 A IT(AV)M Maximum mean on-state current. Tsink=85°C, (note 3) 1179 A IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2) 6850 A IT(d.c.) D.C. on-state current, Tsink=25°C, (note 4) 5360 A ITSM Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5) 43.9 kA ITSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) 48.3 2 I t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5) 2 I t capacity for fusing tp=10ms, VRM≤10V, (note 5) It It diT/dt kA 2 6 9.64×10 2 11.66×10 6 2 As 2 As Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs VRGM Peak reverse gate voltage 5 V PG(AV) Mean forward gate power 5 W PGM Peak forward gate power 50 W THS Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C. Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 1 of 12 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 1.54 ITM=4000A V VTM Maximum peak on-state voltage - - 1.95 ITM=10100A V V0 Threshold voltage - - 1.353 V rS Slope resistance - - 0.064 mΩ dv/dt Critical rate of rise of off-state voltage 200 - - IDRM Peak off-state current - - IRRM Peak reverse current - VGT Gate trigger voltage IGT VD=80% VDRM, Linear ramp, Gate o/c V/µs 300 Rated VDRM mA - 300 Rated VRRM mA - - 3.0 Gate trigger current - - 300 VGD Non-trigger gate voltage - - 0.25 Rated VDRM IH Holding current - - 1000 Tj=25°C mA tgd Gate controlled turn-on delay time - 0.7 1.5 tgt Turn-on time - 1.5 3.0 VD=67% VDRM, ITM=1000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C µs Qrr Recovered charge - 600 - Qra Recovered charge, 50% Chord - 240 300 Irm Reverse recovery current - 135 - trr Reverse recovery time - 3.5 - 12 - 20 15 - 25 - - 0.011 Double side cooled K/W - - 0.022 Single side cooled K/W 27 - 47 kN - 1.7 - kg tq Turn-off time (note 2) Rth(j-hs) Thermal resistance, junction to heatsink F Mounting force Wt Weight Tj=25°C V VD=10V, IT=3A mA V µC µC ITM=4000A, tp=1000µs, di/dt=60A/µs, Vr=50V A µs ITM=4000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs ITM=4000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information for details of tq codes. Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 2 of 12 May, 2003 µs WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 Notes on Ratings and Characteristics 1.0 Voltage Grade Table VDRM VDSM VRRM V 1000 1200 Voltage Grade 10 12 VRSM V 1100 1300 VD VR DC V 700 810 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 7.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 8.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device. IGM 4A/µs IG tp1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. 9.0 Frequency Ratings Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 3 of 12 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum ratings shown on page 1. 10.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500A/µs. 11.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. 12.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f max = 1 tpulse + tq + tv 13.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let Ep be the Energy per pulse for a given current and pulse width, in joules Let RthJK be the steady-state d.c. thermal resistance (junction to sink) and TSINK be the heat sink temperature. Then the average dissipation will be: W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ RthJK ) 14.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 Fig. 1 150 µs (ii) Qrr is based on a 150µs integration time i.e. Qrr = ∫i rr .dt 0 (iii) K Factor = t1 t2 15.0 Reverse Recovery Loss Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 4 of 12 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 15.1 Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from the following: TSINK ( new) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) ) Where k=0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature. Rth(J-Hs) = d.c. thermal resistance (°C/W). The total dissipation is now given by: W (TOT) = W (original) + E ⋅ f 15.2 Determination without Measurement In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows. Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz TSINK (new ) = TSINK (original ) − (E ⋅ Rth ⋅ f ) Where TSINK (new) is the required maximum heat sink temperature and TSINK (original) is the heat sink temperature given with the frequency ratings. A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves. NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Vr CS ⋅ di dt Where: Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Vr CS R = Commutating source voltage = Snubber capacitance = Snubber resistance Page 5 of 12 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 16.0 Computer Modelling Parameters 16.1 Calculating VT using ABCD Coefficients The on-state characteristic IT vs VT, on page 7 can be represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T The constants, derived by curve fitting software, are given in this report for hot and cold characteristics. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients A 125°C Coefficients 2.2410365 B A 1.1854785 -3 B 0.08935579 -4 C 1.484966×10 -3 D -0.01550443 -6.580221×10 C 1.055932×10 D -5.499580×10 -4 16.2 D.C. Thermal Impedance Calculation −t τ rt = ∑ rp ⋅ 1 − e p p =1 p=n Where p = 1 to n, n is the number of terms in the series. t rt rp τp = = = = Duration of heating pulse in seconds. Thermal resistance at time t. Amplitude of pth term. Time Constant of rth term. D.C. Single Side Cooled Term 1 2 3 -3 4 -3 5 -4 6 -4 -4 rp 0.0142 2.34×10 3.39×10 8.87×10 6.00×10 4.66×10 τp 9.25 2.07957 0.23675 0.07935 0.0107 2.89×10 -3 D.C. Double Side Cooled Term 1 2 -3 3 -3 4 -3 -4 rp 5.60×10 2.81×10 1.42×10 9.34×10 τp 1.593884 0.28583 0.07721 4.84×10 Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 6 of 12 -3 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 Curves Figure 1 - On-state characteristics of Limit device 10000 Figure 2 - Transient thermal impedance 0.1 R3370ZC10#-12# Issue 1 R3370ZC10#-12# Issue 1 Tj = 125°C Tj = 25°C SSC 0.022K/W Instantaneous on-state current - I T Transient Thermal Impedance - Z (th)t (K/W) (A) 0.01 1000 DSC 0.011K/W 0.001 0.0001 100 0 0.5 1 1.5 2 2.5 0.00001 0.0001 3 Instantaneous on-state voltage - VT (V) 0.01 0.1 1 10 100 Time (s) Figure 3 - Gate characteristics - Trigger limits 7 0.001 Figure 4 - Gate characteristics - Power curves 20 R3370ZC10#-12# Issue 1 Tj=25°C R3370ZC10#-12# Issue 1 Tj=25°C 18 6 16 Max VG dc 14 Max VG dc Gate Trigger Voltage - VGT (V) Gate Trigger Voltage - VGT (V) 5 4 IGT, VGT 3 12 10 8 PG Max 30W dc 6 -40°C -10°C 25°C 125°C 2 PG 5W dc 4 Min VG dc 1 Min VG dc 2 IGD, VGD 0 0 0 0.2 0.4 0.6 0.8 0 1 Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 2 4 6 8 10 Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A) Page 7 of 12 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 Figure 5 - Total recovered charge, Qrr 10000 10000 R3370ZC10#-12# Issue 1 R3370ZC10#-12# Issue 1 Tj = 125°C Tj = 125°C 4kA 3kA 2kA 1kA 1000 100 100 10 10 100 1000 10 Commutation rate - di/dt (A/µs) 100 Figure 8 - Maximum recovery time, trr (50% chord) 10 1000 R3370ZC10#-12# Issue 1 R3370ZC10#-12# Issue 1 Tj = 125°C 1000 Commutation rate - di/dt (A/µs) Figure 7 - Peak reverse recovery current, Irm Tj = 125°C 4kA 3kA 2kA 1kA Reverse recovery time - t rr (µs) Reverse recovery current - I rm (A) 4kA 3kA 2kA 1kA 1000 Recovered charge - Q ra (µC) Total recovered charge - Q rr (µC) Figure 6 - Recovered charge, Qra (50% chord) 100 4kA 3kA 2kA 1kA 1 10 10 100 10 1000 Commutation rate - di/dt (A/µs) Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 100 1000 Commutation rate - di/dt (A/µs) Page 8 of 12 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 Figure 9 - Reverse recovery energy per pulse 1000 Figure 10 - Sine wave energy per pulse 1.00E+02 R3370ZC10#-12# Issue 1 Vrm =0.67%VDRM R3370ZC10#-12# Issue 1 Tj=125°C Tj = 125°C Snubber 0.5µF, 6Ω 4kA 1.00E+01 3kA 8kA Energy per pulse (J) Energy per pulse - E r (J) 2kA 1kA 6kA 1.00E+00 4kA 2kA 1.00E-01 1kA 500A 1.00E-02 1.00E-05 100 10 100 1000 1.00E-04 Commutation rate - di/dt (A/µs) Figure 11 - Sine wave frequency ratings 1.00E+05 1.00E-03 1.00E-02 Pulse width (s) Figure 12 - Sine wave frequency ratings 1.00E+05 R3370ZC10#-12# Issue 1 R3370ZC10#-12# Issue 1 1kA THs=85°C THs=55°C 100% Duty Cycle 100% Duty Cycle 2kA 1.00E+04 1.00E+04 2kA 1.00E+03 Frequency (Hz) Frequency (Hz) 4kA 6kA 4kA 1.00E+03 6kA 8kA 8kA 1.00E+02 1.00E+02 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Pulse Width (s) Page 9 of 12 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 Figure 13 - Square wave frequency ratings 1.00E+05 Figure 14 - Square wave frequency ratings 1.00E+05 R3370ZC10#-12# Issue 1 2kA R3370ZC10#-12# Issue 1 1kA di/dt=100A/µs di/dt=500A/µs THs=55°C THs=55°C 100% Duty Cycle 100% Duty Cycle 1.00E+04 1.00E+04 2kA 4kA 6kA Frequency (Hz) Frequency (Hz) 4kA 8kA 1.00E+03 6kA 1.00E+03 8kA 1.00E+02 1.00E+02 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 Figure 15 - Square wave frequency ratings 1.00E+05 1.00E+05 di/dt=100A/µs di/dt=500A/µs THs=85°C THs=85°C 100% Duty Cycle 2kA 1.00E-02 R3370ZC10#-12# Issue 1 1kA 1.00E+04 1.00E-03 Figure 16 - Square wave frequency ratings R3370ZC10#-12# Issue 1 1kA 1.00E-04 Pulse width (s) Pulse width (s) 100% Duty Cycle 1.00E+04 2kA 1.00E+03 Frequency (Hz) Frequency (Hz) 4kA 6kA 8kA 4kA 1.00E+03 6kA 8kA 1.00E+02 1.00E+01 1.00E-05 1.00E+02 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 10 of 12 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 Figure 17 - Square wave energy per pulse 1.00E+03 Figure 18 - Square wave energy per pulse 1.00E+03 R3370ZC10#-12# Issue 1 R3370ZC10#-12# Issue 1 di/dt=500A/µs di/dt=100A/µs Tj=125°C Tj=125°C 1.00E+02 1.00E+02 1.00E+01 Energy per pulse (J) Energy per pulse (J) 8kA 6kA 4kA 8kA 6kA 4kA 1.00E+00 1.00E+01 1.00E+00 2kA 1kA 500A 2kA 1.00E-01 1.00E-01 1kA 500A 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) 2 Figure 19 - Maximum surge and I t Ratings Gate may temporarily lose control of conduction angle 1.00E+08 R3370ZC10#-12# Issue 1 I2t: VRRM≤10V 2 I t: 60% VRRM Tj (initial) = 125°C 1.00E+07 100000 Maximum I2t (A2s) Total peak half sine surge current - I TSM (A) 1000000 ITSM: VRRM≤10V ITSM: 60% VRRM 10000 1 3 5 10 Duration of surge (ms) Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 1 5 10 50 100 1.00E+06 Duration of surge (cycles @ 50Hz) Page 11 of 12 May, 2003 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12 Outline Drawing & Ordering Information 101A281 ORDERING INFORMATION (Please quote 10 digit code as below) ♦♦ R3370 ZC Fixed Type Code Fixed Outline Code # Fixed Voltage Code VDRM/100 10-12 Typical order code: R3370ZC12D – 1200V VDRM, VRRM, 20µs tq, 37.7mm clamp height capsule. tq Code C=15µs, D=20µs, E=25µs IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: marcom@ixys.de Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: WSL.sales@westcode,com IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: sales@ixys.net Westcode Semiconductors Inc 3270 Cherry Avenue Long Beach CA 90807 USA Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182 E-mail: WSI.sales@westcode.com www.westcode.com www.ixys.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1 Page 12 of 12 May, 2003

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