Medium Voltage Thyristor Types K1121NC320 to

Date:- 15 May, 2003
Data Sheet Issue:- 1
Medium Voltage Thyristor
Types K1121NC320 to K1121NC360
Old Type No.: P440CH32-36
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
3200-3600
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
3200-3600
V
VRRM
Repetitive peak reverse voltage, (note 1)
3200-3600
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
3300-3700
V
MAXIMUM
LIMITS
UNITS
OTHER RATINGS
IT(AV)M
Maximum average on-state current, Tsink=55°C, (note 2)
1121
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 2)
778
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 3)
479
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C, (note 2)
2200
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
1939
A
ITSM
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
15.0
kA
ITSM2
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
16.0
2
I t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
2
I t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
It
It
(di/dt)cr
2
2
kA
1.13×10
6
As
2
1.28×10
6
As
2
Critical rate of rise of on-state current (repetitive), (Note 6)
300
A/µs
Critical rate of rise of on-state current (non-repetitive), (Note 6)
600
A/µs
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
4
W
PGM
Peak forward gate power
30
W
Tj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
Page 1 of 11
May, 2003
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
2.05
2.2
ITM=2000A
V
VTM
Maximum peak on-state voltage
-
-
2.94
ITM=3400A
V
VT0
Threshold voltage
-
-
1.098
V
rT
Slope resistance
-
-
0.542
mΩ
1000
-
-
(dv/dt)cr Critical rate of rise of off-state voltage
VD=80% VDRM, linear ramp, gate o/c
V/µs
IDRM
Peak off-state current
-
-
100
Rated VDRM
mA
IRRM
Peak reverse current
-
-
100
Rated VRRM
mA
Vtr
On-state recovery voltage
-
10.0
-
VGT
Gate trigger voltage
-
-
3.0
IGT
Gate trigger current
-
-
300
VGD
Gate non-trigger voltage
-
-
0.25
Rated VDRM
IH
Holding current
-
-
1000
Tj=25°C
mA
tgd
Gate-controlled turn-on delay time
-
0.7
1.5
µs
tgt
Turn-on time
-
1.5
3.0
VD=67% VDRM, IT=1000A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
Qrr
Recovered charge
-
2000
-
Qra
Recovered charge, 50% Chord
-
1000
1400
Irm
Reverse recovery current
-
100
-
trr
Reverse recovery time, 50% Chord
-
20.0
-
tq
Thermal resistance, junction to heatsink
F
Mounting force
Wt
Weight
Tj=25°C
V
V
VD=10V, IT=3A
mA
V
µC
µC
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V
A
µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
200
-
-
250
-
-
-
0.024
Double side cooled
K/W
-
-
0.048
Single side cooled
K/W
19
-
26
kN
-
510
-
g
Notes:1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
µs
Turn-off time
RthJK
IT=3300A, tp=10ms, Tcase=25°C
Page 2 of 11
May, 2003
µs
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
32
34
36
VDRM VDSM VRRM
V
3200
3400
3600
VRSM
V
3300
3500
3700
VD VR
DC V
1800
1850
1900
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
10.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
11.0 Computer Modelling Parameters
11.1 Device Dissipation Calculations
W AV =
2
I AV =
− VT 0 + VT 0 + 4 ⋅ ff ⋅ rT ⋅ WAV
2 ⋅ ff ⋅ rT
and:
∆T
Rth
∆T = T j max − THs
Where VT0=1.098V, rT=0.542mΩ,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
30°
60°
90°
120°
180°
270°
d.c.
Square wave Double Side Cooled
0.03047
0.03035
0.02857
0.02733
0.02569
0.0242
0.024
Square wave Single Side Cooled
0.05823
0.0577
0.05408
0.05286
0.05121
0.0497
0.048
Sine wave Double Side Cooled
0.0303
0.0275
0.0262
0.02524
0.024
Sine wave Single Side Cooled
0.05588
0.05323
0.05186
0.05089
0.048
Form Factors
Conduction Angle
30°
60°
90°
120°
180°
270°
d.c.
Square wave
3.464
2.449
2
1.732
1.414
1.149
1
Sine wave
3.98
2.778
2.22
1.879
1.57
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
11.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given below for hot characteristics. The resulting
values for VT agree with the true device characteristic over a current range, which is limited to that plotted.
25°C Coefficients
125°C Coefficients
A
0.89335367
A
0.89335367
B
0.03826203
B
0.03826203
C
-4
2.5045×10
C
2.5045×10
D
9.27801×10
D
9.27801×10
-3
-4
-3
11.3 D.C. Thermal Impedance Calculation
−t

τ
rt = ∑ rp ⋅ 1 − e p

p =1

p=n




Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp = Time Constant of rth term.
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled
Term
rp
τp
1
2
3
-3
4
-3
5
-3
1.038×10
-3
1.93×10
0.01248
6.216×10
1.939×10
1.527×10
0.884
0.1221
0.03612
7.612×10
-3
-3
D.C. Single Side Cooled
Term
rp
τp
1
2
3
-3
4
-3
5
-3
6
-3
7
-3
-3
0.02836
5.574×10
3.588×10
6.222×10
2.04×10
1.675×10
1.258×10
6.345
3.55
0.582
0.132
0.0496
0.01015
2.225×10
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
Page 5 of 11
May, 2003
-3
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
0.1
10000
K1121NC320-360
Issue 1
Tj = 25°C
K1121NC320-360
Issue 1
SSC
0.048K/W
Tj = 125°C
DSC
0.024K/W
Transient thermal impedance (K/W)
Instantaneous On-state current - I TM (A)
0.01
1000
0.001
0.0001
100
0
1
2
3
4
5
0.00001
1E-05 0.0001 0.001
6
Instantaneous On-state voltage - VTM (V)
30
10
100
K1121NC320-360
Issue 1
Tj=25°C
Tj=25°C
25
Max VG dc
8
Max VG dc
Gate Trigger Voltage - VGT (V)
7
Gate Trigger Voltage - VGT (V)
1
Figure 4 - Gate characteristics - Power curves
K1121NC320-360
Issue 1
9
0.1
Time (s)
Figure 3 - Gate characteristics - Trigger limits
10
0.01
6
5
IGT, VGT
4
20
15
10
3
-40°C
-10°C
2
25°C
125°C
PG Max 30W dc
5
Min VG dc
PG 4W dc
Min VG dc
1
IGD, VGD
0
0
0
0.2
0.4
0.6
0.8
0
1
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
2
4
6
8
10
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Figure 5 - Total recovered charge, Qrr
10000
Figure 6 - Recovered charge, Qra (50% chord)
10000
K1121NC320-360
Issue 1
Tj=125°C
K1121NC320-360
Issue 1
Tj=125°C
2000A
1500A
1000A
Recovered charge - Q rr (µC)
Recovered charge - Q ra, 50% chord (µC)
500A
1000
2000A
1500A
1000A
500A
1000
100
1
10
100
1000
1
10
di/dt (A/µs)
100
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
100
10000
K1121NC320-360
Issue 1
K1121NC320-360
Issue 1
Tj=125°C
Reverse recovery time (50% chord) - t rr (µs)
Tj=125°C
Reverse recovery current - I rm (A)
1000
di/dt (A/µs)
2000A
1500A
1000A
500A
1000
100
10
2000A
1500A
1000A
500A
1
10
1
10
100
1
1000
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Figure 9 – On-state current vs. Power dissipation –
Double Side Cooled (Sine wave)
4500
Figure 10 – On-state current vs. Heatsink
temperature - Double Side Cooled (Sine wave)
150
K1121NC320-360
Issue 1
120°
4000
90°
125
Maximum permissable heatsink temperature (°C)
60°
3500
Maximum forward dissipation (W)
K1121NC320-360
Issue 1
180°
30°
3000
2500
2000
1500
1000
100
75
50
25
30°
60°
90°
120°
180°
500
0
0
0
500
1000
1500
0
Mean forward current (A) (Whole cycle averaged)
Figure 11 – On-state current vs. Power dissipation
– Double Side Cooled (Square wave)
4500
500
1000
1500
Mean forward current (A) (Whole cycle averaged)
Figure 12 – On-state current vs. Heatsink
temperature – Double Side Cooled (Square wave)
150
K1121NC320-360
Issue 1
K1121NC320-360
Issue 1
4000
125
Maximum permissible heatsink temperature (°C)
Maximum forward dissipation (W)
3500
3000
2500
d.c.
270°
180°
120°
90°
60°
30°
2000
1500
100
75
30°
60°
90°
120°
180°
270°
d.c.
`
50
1000
25
500
0
0
0
500
1000
1500
2000
0
2500
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
500
1000
1500
2000
2500
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Figure 13 – On-state current vs. Power dissipation
– Single Side Cooled (Sine wave)
2500
Figure 14 – On-state current vs. Heatsink
temperature – Single Side Cooled (Sine wave)
150
K1121NC320-360
Issue 1
180°
60°
90°
125
120°
Maximum permissable heatsink temperature (°C)
2000
30°
Maximum forward dissipation (W)
K1121NC320-360
Issue 1
1500
1000
100
75
50
500
25
0
30°
60°
90°
120°
180°
0
0
200
400
600
800
1000
0
Mean forward current (A) (Whole cycle averaged)
Figure 15 – On-state current vs. Power dissipation
– Single Side Cooled (Square wave)
2500
200
400
600
800
1000
Mean forward current (A) (Whole cycle averaged)
Figure 16 – On-state current vs. Heatsink
temperature – Single Side Cooled (Square wave)
150
K1121NC320-360
Issue 1
K1121NC320-360
Issue 1
125
Maximum permissible heatsink temperature (°C)
Maximum forward dissipation (W)
2000
1500
d.c.
270°
180°
120°
90°
60°
30°
1000
100
30°
60°
90°
120°
180°
270°
d.c.
75
50
500
25
0
0
0
200
400
600
800
1000
1200
0
1400
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
200
400
600
800
1000
1200
1400
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Figure 17 – Square Wave Frequency Ratings
1.00E+05
Figure 18 – Sine Wave Frequency Ratings
1.00E+05
K1121NC320-360
Issue 1
K1121NC320-360
Issue 1
Ths=55°C
di/dt=50A/µs
Ths=55°C
1.00E+04
500A
500A
100% Duty Cycle
1.00E+04
1kA
100% Duty Cycle
1kA
Frequency (Hz)
Frequency (Hz)
2kA
1.00E+03
4kA
1.00E+03
2kA
1.00E+02
6kA
1.00E+02
1.00E+01
4kA
8kA
6kA
8kA
1.00E+00
1.00E-05
1.00E-04
1.00E-03
1.00E+01
1.00E-05
1.00E-02
1.00E-04
di/dt (A/µs)
1.00E-03
1.00E-02
di/dt (A/µs)
2
Figure 19 - Maximum surge and I t Ratings
1.00E+07
100000
I2t: 60% VRRM
1.00E+06
10000
ITSM: VRRM ≤10V
Maximum I2t (A2s)
Total peak half sine surge current (A)
I2t: VRRM ≤10V
ITSM: 60% VRRM
Tj (initial) = 125°C
K1121NC320-360
Issue 1
1000
1
3
5
10
Duration of surge (ms)
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
1
5
10
50
100
1.00E+05
Duration of surge (cycles @ 50Hz)
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Medium Voltage Thyristor Types K1121NC320 to K1121NC360
Outline Drawing & Ordering Information
ORDERING INFORMATION
K1121
Fixed
Type Code
(Please quote 10 digit code as below)
NC

0
Fixed
outline code
Voltage code
VDRM/100
32-36
Fixed turn-off
time code
Order code: K1121NC340 – 3400V VDRM, VRRM, 27.7mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: [email protected]
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: [email protected],com
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: [email protected]
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: [email protected]
www.westcode.com
www.ixys.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Types K1121NC320 to K1121NC360 Issue 1
Page 11 of 11
May, 2003