WESTCODE An Date:- 28 Oct-04 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G1000NC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 4500 V VRSM Non-repetitive peak off-state voltage, (note 1) 4500 V VRRM Repetitive peak reverse voltage 18 V VRSM Non-repetitive peak reverse voltage 18 V MAXIMUM LIMITS UNITS RATINGS ITGQ Peak turn-off current, (note 2) 1000 A Ls Snubber loop inductance, ITM=ITGQ, (note 2) 300 nH IT(AV)M Mean on-state current, Tsink=55°C (note 3) 545 A IT(RMS) Nominal RMS on-state current, 25°C (note 3) 1065 A ITSM Peak non-repetitive surge current tp=10ms, (Note 4) 8 kA ITSM2 Peak non-repetitive surge current tp=2ms, (Note 4) 14 2 2 320×10 kA 3 2 It I t capacity for fusing tp=10ms As di/dtcr Critical rate of rise of on-state current, (note 5) 800 PFGM Peak forward gate power 210 W PRGM Peak reverse gate power 8 kW IFGM Peak forward gate current 140 A VRGM Peak reverse gate voltage (note 6). 18 V toff Minimum permissible off-time (note 2) 80 µs ton Maximum permissible on-time 20 µs Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +125 °C A/µs Notes:1) VGK=-2Volts. 2) Tj=125°C, VD=2/3VDM, VDM<VDRM, diGQ/dt=25A/µs, ITGQ=1000A and CS=2µF. 3) Double-side cooled, single phase; 50Hz, 180° half-sinewave. 4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR≤10V. 5) For di/dt>800A/µs please consult the factory. 6) May exceed this value during turn-off avalanche period. Data Sheet. Type G1000NC450 Issue 1 Page 1 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 Characteristics Parameter MIN TYP MAX TEST CONDITIONS VTM Maximum peak on-state voltage - 3.5 4.0 IL Latching current - 10 IH Holding current. - dv/dtcr Critical rate of rise of off-state voltage IDRM UNITS IG=2A, IT=1000A V - Tj=25°C A 10 - Tj=25°C A 1000 - - VD=2/3VDRM, VGR=-2V V/µs Peak off state current - - 50 Rated VDRM, VGR=-2V mA IRRM Peak reverse current - - 60 VRR=16V mA IGKM Peak negative gate leakage current - - 60 VGR=-16V mA - 1.2 - Tj=-40°C V - 1 - Tj=25°C - 0.8 - Tj=125°C V - 1.5 4 Tj=-40°C A - 0.8 2 Tj=25°C - 0.3 0.7 Tj=125°C A VD=50%VDRM, ITGQ=1000A, diT/dt=300A/µs, IGM=20A, diG/dt=10A/µs µs VGT IGT Gate trigger voltage Gate trigger current V VD=25V, RL=25mΩ A VD=25V, RL=25mΩ td Delay time - 1.5 - tgt Turn-on time - 4.5 6 tf Fall time - 1 - µs tgq Turn-off time - 14 18 µs IGQ Peak turn-off gate current - 280 - QGQ Turn-off gate charge - 2 3 ttail Tail time - 40 60 µs tgw Gate off-time (note 3) 100 - - µs - - 0.027 Double side cooled K/W - - 0.07 K/W - - 0.045 Anode side cooled 15 - 25 - 480 - RthJK Thermal resistance junction to sink F Mounting force Wt Weight VD=2/3VDRM, ITGQ=1000A, diGQ/dt=25A/µs, VGR=16V, CS=2µF Cathode side cooled Page 2 of 15 A mC K/W (see note 2) kN g Notes:1) Unless otherwise indicated Tj=125oC. 2) For other clamping forces, consult factory. 3) The gate off-time, is the period during which the gate circuit is required to remain at low impedance to allow for the passage of tail current. Data Sheet. Type G1000NC450 Issue 1 µs October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 Notes on ratings and characteristics. 1. Maximum Ratings. 1.1 Off-state voltage ratings. Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For other gate conditions see the curves of figure 5. It should be noted that VDRM is the repeatable peak voltage which may be applied to the device and does not relate to a DC operating condition. While not given in the ratings, VDC should ideally be limited to 55% VDRM in this product. Diagram 1. 1.2 Reverse voltage rating. All devices in this series have a minimum VRRM of 18 Volts. 1.3 Peak turn-off current. The figure given in maximum ratings is the highest value for normal operation of the device under conditions given in note 2 of ratings. For other combinations of ITGQ, VD and Cs see the curves in figures 15 & 16. The curves are effective over the normal operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls<0.3µH must be ensured for the curves to be applied. Ls Ds R Cs Diagram 2. 1.4 R.M.S and average current. Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° halfsinewave. These are included as a guide to compare the alternative types of GTO thyristors available, values can not be applied to practical applications, as they do not include switching losses. 2 1.5 Surge rating and I t. Ratings are for half-sinewave, peak value against duration is given in the curve of figure 2. 1.6 Snubber loop inductance. Use of GTO thyristors with snubber loop inductance, Ls<0.3µH implies no dangerous Vs voltages (see diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced. Alternatively Vs should be limited to 800 Volts to avoid possible device failure. Data Sheet. Type G1000NC450 Issue 1 Page 3 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 1.7 Critical rate of rise of on-state current The value given is the maximum repetitive rating, but does not imply any specific operating condition. The high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt is possible. Where the device is required to operate with infrequent high current pulses, with natural commutation (i.e. not gate turn-off), then di/dt>5kA/µs is possible. For this type of operation individual specific evaluation is required. 1.8 Gate ratings The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turnoff to exceed VRGM which is the implied DC condition. 1.9 Minimum permissible off time. This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in the ratings applies only to operating conditions of ratings note 2. 1.10 Minimum permissible on-time. Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend upon the di/dt and operating conditions (each case needs to be assessed on an individual basis). Data Sheet. Type G1000NC450 Issue 1 Page 4 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 2 Characteristics 2.1 Instantaneous on-state voltage Measured using a 500µs square pulse, see also the curves of figure 1 for other values of ITM. 2.2 Latching and holding current These are considered to be approximately equal and only the latching current is measured, type test only as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM & IG as for td of characteristic data. IGM IG 100µs Gate current 16V 100µs Unlatched R1 Anode current unlatched condition CT C1 Anode current Latched condition Vs DUT Latched Gate-drive Diagram 4, Latching test circuit and waveforms. 2.3 Critical dv/dt The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for RGK>10Ω. Diagram 5, Definition of dV/dt. 2.4 Off-state leakage. For IDRM & IRRM see notes 1.1 & 1.2 for gate leakage IGK, the off-state gate circuit is required to sink this leakage and still maintain minimum of –2 Volts. See diagram 6. Diagram 6. Data Sheet. Type G1000NC450 Issue 1 Page 5 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 2.5 Gate trigger characteristics. These are measured by slowly ramping up the gate current and monitoring the transition of anode current and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction temperature range, is given in the curves of figure 6. Only typical figures are given for gate trigger voltage, however, the curves of figure 3 give the range of gate forward characteristics, for the full allowable junction temperature range. The curves of figures 3 & 6 should be used in conjunction, when considering forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest junction temperature start-up condition. Feedback Anode current 0.9VAK R1 Not to scale Currentsence CT Gate current C1 Vs 0.1IA IGT DUT Anode-Cathode Voltage Gate-drive Diagram 7, Gate trigger circuit and waveforms. 2.6 Turn-on characteristics The basic circuit used for turn-on tests is given in diagram 8. The test is initiated by establishing a circulating current in Tx, resulting in VD appearing across Cc/Lc. When the test device is fired Cc/Lc discharges through DUT and commutates Tx off, as pulse from Cc/Lc decays the constant current source continues to supply a fixed current to DUT. Changing value of Cc & Lc allows adjustment of ITM and di/dt respectively, VD and i are also adjustable. Lc Cc R1 CT Tx i D Cd Vd DUT Gate-drive Diagram 8, Turn-on test circuit of FT40. The definitions of turn-on parameters used in the characteristic data are given in diagram 9. The gate circuit conditions IGM & IG are fully adjustable, IGM duration 10µs. diG/dt IG IGM td tr di/dt ITM VD VD=VDM tgt Eon integral period Diagram 9, Turn-on wave-diagrams. Data Sheet. Type G1000NC450 Issue 1 Page 6 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 In addition to the turn-on time figures given in the characteristics data, the curves of figure 9 give the relationship of tgt to di/dt and IGM. The data in the curves of figures 7 & 8, gives the turn-on losses both with and without snubber discharge, a snubber of the form given in diagram 2 is assumed. Only typical losses are given due to the large number of variables which effect Eon. It is unlikely that all negative aspects would appear in any one application, so typical figures can be considered as worst case. Where the turnon loss is higher than the figure given it will in most cases be compensated by reduced turn-off losses, as variations in processing inversely effect many parameters. For a worst case device, which would also have the lowest turn-off losses, Eon would be 1.5x values given in the curves of figures 7 & 8. Turn-on losses are measured over the integral period specified below:10 µs Eon = ∫ iv.dt 0 The turn-on loss can be sub-divided into two component parts, firstly that associated with tgt and secondly the contribution of the voltage tail. For this series of devices tgt contributes 40% and the voltage tail 60% (These figures are approximate and are influenced by several second order effects). The loss during tgt is greatly affected by gate current and as with turn-on time (figure 9), it can be reduced by increasing IGM. The turn-on loss associated with the voltage tail is not effected by the gate conditions and can only be reduced by limiting di/dt, where appropriate a turn-on snubber should be used. In applications where the snubber is discharged through the GTO thyristor at turn-on, selection of discharge resistor will effect Eon. The curves of figure 8 are given for a snubber as shown in diagram 2, with R=5Ω, this is the lowest recommended value giving the highest Eon, higher values will reduce Eon. 2.7 Turn-off characteristics The basic circuit used for the turn-off test is given in diagram 10. Prior to the negative gate pulse being applied constant current, equivalent to ITGQ, is established in the DUT. The switch Sx is opened just before DUT is gated off with a reverse gate pulse as specified in the characteristic/data curves. After the period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise across DUT until Dc turns-on at a voltage set by the active clamp Cc, the voltage will be held at this value until energy stored in Lx is depleted, after which it will fall to VDC .The value of Lx is selected to give required VD Over the full tail time period. The overshoot voltage VDM is derived from Lc and forward voltage characteristic of DC, typically VDM=1.2VD to 1.5VD depending on test settings. The gate is held reverse biased through a low impedance circuit until the tail current is fully extinguished. Lc Dc Sx RL Rs Lx Cc i DX Ds CT Gatedrive Vd Cs DUT Vc Cd RCD snubber Diagram 10, Turn-off test circuit. The definitions of turn-off parameters used in the characteristic data are given in diagram 11. Data Sheet. Type G1000NC450 Issue 1 Page 7 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 tgq tf VDM 0.9 ITGQ VD 0.1 VGR 0.1 QGQ VG(AV) IGQ VGQ tgw Diagram 11, Turn-off parameter definitions. In addition to the turn-off figures given in characteristic data, the curves of figures 10, 11 & 12 give the relationship of IGQ QGQ and tgq to turn-off current (ITGQ) and diGQ/dt. Only typical values of IGQ are given due to a great dependence upon the gate circuit impedance, which is a function of gate drive design not the device. The tgq is also, to a lesser extent, affected by circuit impedance and as such the maximum figures given in data assume a good low impedance circuit design. The curves of figures 17 & 18 give the tail time and minimum off time to re-fire device as a function of turn-off current. The minimum off time to re-fire the device is distinct from tgw, the gate off time given in characteristics. The GTO thyristor may be safely retriggered when a small amount of tail current is still flowing. In contrast, the gate circuit must remain low impedance until the tail current has fallen to zero or below a level which the higher impedance VGR circuit can sink without being pulled down below –2 Volts. If the gate circuit is to be switched to a higher impedance before the tail current has reached zero then the requirements of diagram 12 must be applied. i tail R (VGR - itail R)>2V Diagram 12. VGR The figure tgw, as given in the characteristic data, is the maximum time required for the tail current to decay to zero. The figure is applicable under all normal operating conditions for the device; provided suitable gate drive is employed. At lower turn-off current, or with special gate drive considerations, this time may be reduced (each case needs to be considered individually).Typical turn-off losses are given in the curves of figures 13 & 14, the integration period for the losses is nominally taken to the end of the tail time (Itail<1A) i.e. :tgt + ttail Eoff = ∫ iv.dt. 0 Data Sheet. Type G1000NC450 Issue 1 Page 8 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 The curves of figure 13 give the turn-off energy for a fixed VD with a VDM=120%VD, whereas the curves of figure 14 give the turn-off energy with a fixed value of VDM and VD=50%VDRM. The curves are for energy against turn-off current/snubber capacitance with a correction for voltage inset as an additional graph (snubber equivalent to diagram 2 is assumed). From these curves a typical value of turn-off energy for any combination of ITGQ/Cs and VD or VDM can be derived. Only typical data is included, to allow for the tradeoff with on-state voltage (VTM) which is a feature of these devices, see diagram 13. When calculating losses in an application, the use of a maximum VTM and typical Eoff will (under normal operating frequencies) give a more realistic value. The lowest VTM device of this type would have a maximum turnoff energy of 1.5x the figure given in the curves of figures 13 & 14. Trade-off between VTM & Eoff E off Diagram 13. VTM 2.8 Safe turn-off periphery The necessity to control dv/dt at tun-off for the GTO thyristor implies a trade-off between ITGQ/VDM/Cs. This information is given in the curves of figures 15 & 16. The information in these curves should be considered as maximum limits and not implied operating conditions, some margin of 'safety' is advised with the conditions of the curves reserved for occasional excursions. It should be noted that these curves are derived at maximum junction temperature, however, they may be applied across the full operating temperature range of the device provided additional precautions are taken. At very low temperature, (below –10°C) the fall-time of device becomes very rapid and can give rise to very high turn-off voltage spikes, as such it is advisable to reduce snubber loop inductance to <0.2µH to minimise this effect. Data Sheet. Type G1000NC450 Issue 1 Page 9 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 Curves Figure 1 - On-state characteristics of Limit device Instantaneous on state current, IT (A) 10000 G1000NC450 Issue 1 Tj=25°C 1000 Tj=125°C 100 10 1.00 2.00 3.00 4.00 5.00 6.00 7.00 Instantaneous on state voltage, VT (V) 2 Figure 2 - Maximum surge and I t Ratings 1.00E+07 100000 G1000NC450 Issue 1 I2t: VRRM ≤10V 2 2 Maximum I t (A s) Total peak half sine surge current (A) Tj (initial) = 125°C 1.00E+06 10000 ITSM: VRRM ≤10V 1000 1 3 5 10 Duration of surge (ms) Data Sheet. Type G1000NC450 Issue 1 1 5 10 50 100 1.00E+05 Duration of surge (cycles @ 50Hz) Page 10 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 Figure 3 – Forward gate characteristics 1000 Figure 4 – Transient thermal impedance 0.1 G1000NC450 Issue 1 G1000NC450 Issue 1 CATHODE FOR Tj=-40oC TO +125oC THERMAL IMPEDANCE JUNCTION TO SINK R thJK, (oK/W) INSTANTANEOUS FORWARD GATE CURRENT, I FG (A) ANODE 100 MINIMUM MAXIMUM 10 1 0 0.5 1 1.5 DOUBLE-SIDE 0.01 0.001 0.0001 0.001 2 0.01 0.1 INSTANTANEOUS FORWARD GATE VOLTAGE, VFG (V) 1 10 100 TIME, (S) Figure 5 – Typical forward blocking voltage Vs. Figure 6 – Gate trigger current Vs junction external gate-cathode resistance temperature 1.2 10 G1000NC450 Issue 1 Tj=50oC 0.8 D.C. GATE TRIGGER CURRENT, I GT (A) FORWARD BLOCKING AS A RATIO OF V D/VDRM 1 G1000NC450 Issue 1 Tj=80oC Tj=105oC 0.6 Tj=125oC 0.4 1 MAXIMUM TYPICAL 0.2 0.1 0 1 10 100 1000 Data Sheet. Type G1000NC450 Issue 1 -50 -25 0 25 50 75 100 125 150 JUNCTION TEMPERATURE, Tj(oC) Ω) EXTERNAL GATE-CATHODE RESISTANCE, RGK (Ω Page 11 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 Figure 7 – Typical turn-on energy per pulse Figure 8 – Typical turn-on energy per pulse (excluding snubber discharge) (including snubber discharge) 0.6 2 G1000NC450 Issue 1 G1000NC450 Issue 1 di/dt=500A/µs VD=0.5VDRM VD=0.5VDRM IGM=20A, diGQ/dt=10A/ µs IGM=20A, diG/dt=10A/ µs Tj=25o 0.5 Cs=2µF, Rs=5W di/dt=400A/µs Tj=25oC TURN-ON ENERGY PER PULSE, EON (J) TURN-ON ENERGY PER PULSE, EON (J) 1.5 0.4 di/dt=400A/µs 0.3 di/dt=300A/µs 0.2 1 di/dt=200A/µs di/dt=100A/µs 0.5 di/dt=200A/µs 0.1 di/dt=300A/µs di/dt=100A/µs 0 0 0 0 500 1000 1500 TURN-ON CURRENT, ITM (A) 500 2000 1000 1500 2000 TURN-ON CURRENT, ITM (A) Figure 9 – Maximum turn-on time Vs rate of rise of Figure 10 Typical peak turn-off gate current Vs turnon-state current off current 10 400 G1000NC450 Issue 1 IGM=10A G1000NC450 Issue 1 VD=2/3VDRM IGM=20A Tj=125oC VD=0.5VDRM, ITM=1000A tr of IGM ≤ 2µs 350 Tj=25oC 8 diGQ/dt=40A/µs PEAK TURN-OFF GATE CURRENT, IGQ (A) TURN-ON TIME, tgt (µs) IGM=40A 6 4 diGQ/dt=30A/µs 300 diGQ/dt=20A/µs 250 200 2 150 0 100 10 100 1000 RATE OF RISE OF ON-STATE CURRENT, di/dt (A/ µs) Data Sheet. Type G1000NC450 Issue 1 0 500 1000 1500 TURN-OFF CURRENT, ITGQ (A) Page 12 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 Figure 11 – Maximum gate turn-off charge Vs turn- Figure 12 – Maximum turn-off time Vs turn-off current off current 25 4 G1000NC450 Issue 1 G1000NC450 Issue 1 VD=2/3VDRM VD=2/3VDRM Tj=125oC Tj=125oC diGQ/dt=20A/µs diGQ/dt=20A/µs 20 diGQ/dt=40A/µs 3 diGQ/dt=50A/µs diGQ/dt=30A/µs TURN-OFF TIME, tgq (µs) TYPICAL GATE TURN-OFF CHARGE, QGQ (mC) diGQ/dt=30A/µs 2 15 diGQ/dt=40A/µs diGQ/dt=50A/µs 10 1 QGQ 5 0 0 0 500 1000 1500 0 500 TURN-OFF CURRENT, ITGQ (A) 1000 1500 TURN-OFF CURRENT, ITGQ (A) Figure 13 – Typical turn-off energy per pulse Vs Figure 14 – Typical turn-off energy per pulse vs turn-off current turn-off current 1.6 G1000NC450 Issue 1 VD=2000V, VDM=1.2VD 2 G1000NC450 Issue 1 CS=1.5µF CS=1µF CS=2µF diGQ/dt=25A/µs Cs=1µF Cs=2µF diGQ/dt=25A/µs CS=3µF Ls≤0.3µH Cs=1.5µF VDM=3000V, VD=0.5VDRM Cs=3µF Ls≤0.3µH o 1.6 Tj=125 C Tj=125oC CS=0.5mF TURN-OFF ENERGY PER PULSE, Eoff (J) TURN-OFF ENERGY PER PULSE, Eoff (J) 1.2 VDM VD 0.8 For other values of VD scale Eoff. Note:VDM≤VDRM 1.5 1 0.4 1000 2000 Cs=0.5µF 1.2 Note: VDM≤VDRM VDM VD 0.8 For other values of VDM scale Eoff 0.5 3000 1.5 0.4 VD 1 1500 3000 0.5 4500 VDM 0 0 0 500 1000 1500 Data Sheet. Type G1000NC450 Issue 1 0 500 1000 1500 TURN-OFF CURRENT, ITGQ (A) TURN-OFF CURRENT, ITGQ (A) Page 13 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 Figure 15 – Maximum permissible turn-off current Figure 16 – Maximum turn-off current Vs turn-off voltage Vs snubber capacitance 3 1500 G1000NC450 Issue 1 G1000NC450 Issue 1 diGQ/dt=25A/µs diGQ/dt=25A/µs Ls≤0.3µH 2.5 Ls<0.3µH Cs=3µF Tj=125oC Tj=125oC Cs=2µF VDM≤1.5VD VD 2 VD≤0.4VDRM VD=2/3VDRM 1.5 TURN-OFF CURRENT, ITGQ (A) SNUBBER CAPACITANCE, C s (µF) 1200 VD=0.55VDRM 1 Cs=1.4µF 900 Cs=1µF 600 Cs=0.5µF 300 0.5 VDM≤1.5VD VD 0 0 0 500 1000 0 1500 0.2 0.4 0.6 0.8 1 TURN-OFF VOLTAGE AS THE RATIO VD/VDRM TURN-OFF CURRENT, ITGQ (A) Figure 17 – Maximum gate tail time (ITGQ<1A) Vs Figure 18 – Minimum off-time to re-fire device Vs turn-off current turn-off current 70 90 G1000NC450 Issue 1 G1000NC450 Issue 1 VD=2/3VDRM VD=2/3VDRM Tj=125oC diGQ/dt=25A/µs MINIMUM OFF-TIME TO RE-FIRE DEVICE, toff (µs) Tj=125oC TAIL TIME (ITGQ<1A), ttail (µs) 60 50 40 80 70 60 50 0 500 1000 1500 TURN-OFF CURRENT, ITGQ (A) Data Sheet. Type G1000NC450 Issue 1 0 500 1000 1500 TURN-OFF CURRENT, ITGQ (A) Page 14 of 15 October, 2004 WESTCODE An IXYS Company Anode Shorted Gate Turn-Off Thyristor type G1000NC450 Outline Drawing & Ordering Information 101A288 ORDERING INFORMATION (Please quote 10 digit code as below) G1000 NC 45 0 Fixed Type Code Fixed Outline Code Fixed Voltage Code VDRM/100 45 Fixed Code Typical order code: G1000NC450 – 4500V VDRM, 26mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: [email protected] WESTCODE An IXYS Company www.westcode.com www.ixys.com Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: WSL.sales@westcode,com Westcode Semiconductors Inc 3270 Cherry Avenue Long Beach CA 90807 USA Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Type G1000NC450 Issue 1 Page 15 of 15 October, 2004 WESTCODE An IXYS Company Data Sheet. Type G1000NC450 Issue 1 Anode Shorted Gate Turn-Off Thyristor type G1000NC450 Page 16 of 15 October, 2004