Anode Shorted Gate Turn-Off Thyristor

Date:- 5th March 2013
Data Sheet Issue:- A1
Anode Shorted Gate Turn-Off Thyristor
Types G3000TF250
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
2500
V
VRSM
Non-repetitive peak off-state voltage, (note 1)
2500
V
VDC-link
Maximum continuos DC-link voltage
1250
V
VRRM
Repetitive peak reverse voltage
18
V
VRSM
Non-repetitive peak reverse voltage
18
V
MAXIMUM
LIMITS
UNITS
RATINGS
ITGQ
Peak turn-off current, (note 2)
3000
A
Ls
Snubber loop inductance, ITM=ITGQ, (note 2)
200
nH
IT(AV)M
Mean on-state current, Tsink=55°C (note 3)
1690
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C (note 3)
3460
A
ITSM
Peak non-repetitive surge current tp=10ms, (Note 4)
30
kA
ITSM2
Peak non-repetitive surge current tp=2ms, (Note 4)
I2 t
I2t capacity for fusing tp=10ms
di/dtcr
40
kA
4.5×106
A2s
Critical rate of rise of on-state current, (note 5)
500
A/µs
PFGM
Peak forward gate power
200
W
PRGM
Peak reverse gate power
21
kW
IFGM
Peak forward gate current
100
A
VRGM
Peak reverse gate voltage (note 6).
18
V
Tj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +125
°C
Notes:1) VGK=-2Volts.
2) Tj=125°C, VD=1250V, VDM ≤2500V diGQ/dt=40A/µs, ITGQ=3000A and CS=5µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR≤10V.
5) IT=3000A repetitive, IGM=30A, diGM/dt=40A/µs. For di/dt>500A/µs please consult the factory.
6) May exceed this value during turn-off avalanche period.
Data Sheet. Type G3000TF250 Issue A1
Page 1 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
Characteristics
Parameter
MIN
TYP
VTM
Maximum peak on-state voltage
-
IL
Latching current
-
40
IH
Holding current.
-
dv/dtcr
Critical rate of rise of off-state
voltage
IDRM
MAX TEST CONDITIONS
IG=5A, IT=3000A
V
-
Tj=25°C
A
40
-
Tj=25°C
A
1000
-
-
VD=3000V, VGR=-2V
V/µs
Peak off state current
-
-
60
Rated VDRM, VGR=-2V
mA
IRRM
Peak reverse current
-
-
20
VRR=18V
mA
IGKM
Peak negative gate leakage current
-
-
20
VGR=-18V
mA
-
1.0
-
Tj=-40°C
V
-
0.7
1
Tj=25°C
-
0.5
-
Tj=125°C
V
-
7.40
9.0
Tj=-40°C
A
-
2.75
4.0
Tj=25°C
0.60
1.0
Tj=125°C
1.0
2.0
VGT
IGT
td
Gate trigger voltage
Gate trigger current
Delay time
-
2.5
UNITS
V
VD=25V, RL=25mΩ
A
VD=25V, RL=25mΩ
A
µs
VD=1250V, ITGQ=3000A, diT/dt=300A/µs,
IGM=40A, diG/dt=30A/µs, CS=5µF, Rs=5Ω
tgt
Turn-on time
-
3.5
5.0
µs
Eon
Turn-on energy
-
0.4
-
J
tf
Fall time
-
1.5
-
µs
ts
Storage time
-
20
25
µs
tgq
Turn-off time
-
26
30
µs
VDM =2000V, ITGQ=3000A, diGQ/dt=40A/µs,
VGR=-16V, CS=5µF
IGQM
Peak turn-off gate current
-
800
-
QGQ
Turn-off gate charge
-
12
-
mC
ttail
Tail time
-
12
-
µs
Eoff
Turn-off energy
-
3.5
-
J
-
12
-
Double side cooled
K/kW
-
26
-
Cathode side cooled
K/kW
-
22
-
Anode side cooled
K/kW
30
-
44
-
1.5
-
RthJK
Thermal resistance junction to sink
F
Mounting force
Wt
Weight
A
(see note 2)
kN
kg
Notes:o
1) Unless otherwise indicated Tj=125 C.
2) For other clamping forces, consult factory.
Data Sheet. Type G3000TF250 Issue A1
Page 2 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
Notes on ratings and characteristics.
1. Maximum Ratings.
1.1 Off-state voltage ratings.
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. It should be noted that VDRM is the
repeatable peak voltage, which may be applied to the device and does not relate to a DC operating condition.
Diagram 1.
1.2 Peak turn-off current.
The figure given in maximum ratings is the highest value for normal operation of the device under conditions given in note 2 of
ratings. A snubber circuit equivalent to that given in diagram 2 is assumed. If a more complex snubber, such as an Underland
circuit, is employed then the equivalent CS should be used and Ls<0.2µH must be ensured.
Ls
R
Ds
Cs
Diagram 2.
1.3 R.M.S and average current.
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-sinewave. These are included as a
guide to compare the alternative types of GTO thyristors available; values cannot be applied to practical applications, as they do not
include switching losses.
2
1.4 Surge rating and I t.
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 2.
1.5 Snubber loop inductance.
Use of GTO thyristors with snubber loop inductance, Ls<0.2µH implies no dangerous Vs voltages (see diagrams 2 & 3) can be
applied, provided the other conditions given in note 1.2 are enforced. Alternatively Vs should be limited to 800 Volts to avoid possible
device failure.
1.6 Gate ratings
The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turn-off to exceed VRGM which
is the implied DC condition.
Data Sheet. Type G3000TF250 Issue A1
Page 3 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
2 Characteristics
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 1 for other values of ITM.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only as outlined below. The
test circuit and wave diagrams are given in diagram 4. The anode current is monitored on an oscilloscope while VD is increased,
until the current is seen to flow during the un-gated period between the end of IG and the application of reverse gate voltage. Test
frequency is 100Hz with IGM & IG as for td of characteristic data.
IGM
IG
100µs
Gate current
16V
100µs
Unlatched
R1
Anode current
unlatched condition
CT
C1
Anode current
Latched condition
Vs
DUT
Latched
Gate-drive
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to dv/dt at turn-off. The
measurement, type test only, is conducted using the exponential ramp method as shown in diagram 5. It should be noted that GTO
thyristors have a poor static dv/dt capability if the gate is open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for
RGK>10Ω.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For IDRM see notes 1.1. For gate leakage IGK, the off-state gate circuit is required to sink this leakage and still maintain minimum of –
2 Volts. See diagram 6.
Diagram 6.
2.5 Gate trigger characteristics.
These are measured by slowly ramping up the gate current and monitoring the transition of anode current and voltage (see diagram
7). Maximum and typical data of gate trigger current, for the full junction temperature range, is given in the curves of figure 4. Only
typical figures are given for gate trigger voltage for the full allowable junction temperature range. Figures 4 should be used in when
considering forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest junction
temperature start-up condition.
Data Sheet. Type G3000TF250 Issue A1
Page 4 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
Feedback
Anode current
0.9VAK
R1
Not to scale
Currentsence
CT
Gate current
C1
Vs
IGT
0.1IA
DUT
Anode-Cathode
Voltage
Gate-drive
Diagram 7, Gate trigger circuit and waveforms.
2.6 Turn-on characteristics
The definitions of turn-on parameters used in the characteristic data are given in diagram 8.
diG/dt
IG
IGM
td
tr
di/dt
ITM
VD
VD=VDM
tgt
Eon integral
period
Diagram 8, Turn-on wave-diagrams.
2.7 Turn-off characteristics
The definitions of turn-off parameters used in the characteristic data are given in diagram 9.
tgq
tf
VDM
0.9
ITGQ
VD
0.1
VGR
0.1
QGQ
IGQ
VG(AV)
VGQ
tgw
Diagram 9, Turn-off parameter definitions.
Data Sheet. Type G3000TF250 Issue A1
Page 5 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
Curves
Figure 1 - On-state characteristics of Limit device
10000
G3000TF250
Issue A1
Instantaneous on-state current, IT (A)
Tj=25°C
Tj=125°C
1000
100
10
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous on-state voltage, VT (V)
Figure 2 - Maximum surge and I2t Ratings
1.00E+08
100000
2
2
Maximum I t (A s)
Total peak half sine surge current (A)
2
I t: VRRM ≤10V
1.00E+07
10000
ITSM: VRRM ≤10V
G3000TF250
Issue A1
Tj (initial) = 125°C
1000
1
3
5
10
Duration of surge (ms)
Data Sheet. Type G3000TF250 Issue A1
1
5
10
50
100
1.00E+06
Duration of surge (cycles @ 50Hz)
Page 6 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
Figure 3 – Instantaneous forward gate characteristics
1000
G3000TF250
Issue A1
Instantaneous forward gate current, I FG (A)
For Tj=-40°C to +125°C
100
Minimum
Maximum
10
1
0
0.5
1
1.5
2
Instantaneous forward gate voltage, VFG (V)
Figure 4 – Transient thermal impedance
0.1
Transient thermal impedance junction to sink RthJK, (K/W)
G3000TF250
Issue A1
Cathode
Anode
Double-side
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
Time, (s)
Data Sheet. Type G3000TF250 Issue A1
Page 7 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
Figure 5 – Typical forward blocking voltage vs.
external gate-cathode resistance
Figure 6 – D.C. gate trigger current vs. junction
temperature
1.2
10
G3000TF250
Issue A1
G3000TF250
Issue A1
Tj=50°C
1
Tj=80°C
D.C. gate trigger current, IGT (A)
Forward blocking as a ratio of VD/VRM
0.8
Tj=105°C
0.6
Tj=125°C
Maximum
1
Typical
0.4
0.2
0.1
0
1
10
100
-50
1000
-25
0
25
50
75
100
125
150
Junction temperature, Tj(°C)
External gate-cathode resistance RGK (W)
Figure 7 – Typical turn-on energy per pulse vs.
turn-on current
Figure 8 – Maximum turn-on time vs. rate of rise of
on-state current
0.6
8
G3000TF250
Issue A1
G3000TF250
Issue A1
VD=0.5VDRM, ITGQ=3000A
VD=0.5VDRM
diG/dt=30A/µs
IGM=40A, diG/dt=30A/ µs
Cs=5µF, Rs=5Ω
0.5
Tj=25°C
di/dt=400A/µs
Tj=25°C
IGM=40A
6
di/dt=300A/µs
IGM=50A
0.3
di/dt=200A/µs
0.2
di/dt=100A/µs
Turn-on time, tgt (µs)
Turn-on energy per pulse, EON (J)
0.4
IGM=60A
4
2
0.1
0
0
0
500
1000
1500
2000
2500
3000
3500
4000
10
Turn-on current, ITM (A)
Data Sheet. Type G3000TF250 Issue A1
100
1000
Rate of rise of on-state current, di/dt (A/ µs)
Page 8 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
Figure 9 – Typical peak turn-off gate current vs.
turn-off current
Figure 10 – Typical gate turn-off charge vs. turn-off
current
1000
15
G3000TF250
Issue A1
VDM=0.8VDRM
G3000TF250
Issue A1
VDM=0.8VDRM
diGQ/dt=60A/µs
Tj=125°C
Tj=125°C
diGQ/dt=40A/µs
diGQ/dt=40A/µs
800
diGQ/dt=60A/µs
Gate turn-off charge, QGQ (mC).
Peak turn-off gate current, IGQ (A)
10
600
5
400
200
0
0
1000
2000
3000
4000
0
1000
Turn-off current, ITGQ (A)
2000
3000
4000
Turn-off current, ITGQ (A)
Figure 11 – Maximum turn-off time vs. turn-off
current
Figure 12 – Typical turn-off energy per pulse vs.
turn-off current
40
4
G3000TF250
Issue A1
G3000TF250
Issue A1
VDM=0.8VDRM
VDM=2000V, VD=0.5VDRM
Tj=125°C
35
Cs=5µF
diGQ/dt=40A/µs
Ls≤0.2µH
Cs=4µF
Tj=125°C
diGQ/dt=40A/µs
30
3
Cs=3µF
diGQ/dt=60A/µs
Turn-off energy per pulse, Eoff (J)
Turn-off time, tgq (µs)
25
20
15
10
2
1
5
0
0
0
1000
2000
3000
0
4000
Data Sheet. Type G3000TF250 Issue A1
1000
2000
3000
4000
Turn-off current, ITGQ (A)
Turn-off current, ITGQ (A)
Page 9 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
Figure 13 – Maximum permissible turn-off current
vs. snubber capacitance
Figure 14 – Maximum turn-off current vs. turn-off
voltage
5
3500
G3000TF250
Issue A1
G3000TF250
Issue A1
VDM=2000V, VD=0.5VDRM
VDM=2000V, VD=0.5VDRM
diGQ/dt=40A/µs
4.5
diGQ/dt=40A/µs
Ls≤0.2µH
Tj=125°C
Ls<0.2µH
3000
Cs=5µF
Tj=125°C
4
2500
Cs=4µF
Turn-off current, ITGQ (A)
Snubber capacitance, Cs (µF)
3.5
3
2000
Cs=3µF
1500
Cs=2µF
2.5
1000
Cs=1µF
2
500
1.5
1
1000
0
1500
2000
2500
3000
0
0.2
Turn-off current, ITGQ (A)
0.4
0.6
0.8
1
Turn-off volatge as the ratio VD/VDRM
Figure 15 – typical tail time (ITGQ<2A) vs. turn-off
current
Figure 16 – Minimum off-time to re-fire device vs.
turn-off current
120
14
12
G3000TF250
Issue A1
G3000TF250
Issue A1
VDM=2000V, VD=0.5VDRM
VD=0.8VDRM
diGQ/dt=40A/µs
Tj=125°C
Ls<0.2µH
Tj=125°C
diGQ/dt=40A/µs
100
diGQ/dt=60A/µs
Minimum off-time to re-fire device, toff (µs)
Tail time (ITGQ<2A), ttail (µs)
10
8
6
80
4
60
2
0
40
0
1000
2000
3000
4000
0
Turn-off current, ITGQ (A)
Data Sheet. Type G3000TF250 Issue A1
1000
2000
3000
4000
Turn-off current, ITGQ (A)
Page 10 of 11
March 2013
Anode Shorted Gate Turn-Off Thyristor type G3000TF250
Outline Drawing & Ordering Information
101A316
(Please quote 10 digit code as below)
ORDERING INFORMATION
G3000
TF
25
0
Fixed
Type Code
Fixed
Outline Code
Fixed Voltage Code
VDRM/100
25
Fixed Code
Order code: G3000TF250
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except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Type G3000TF250 Issue A1
Page 11 of 11
March 2013