PolarHVTM Power MOSFET IXTP 2R4N50P IXTY 2R4N50P VDSS ID25 RDS(on) = 500 = 2.4 ≤ 3.75 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGSM VGSM Transient Continuous ± 40 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 2.4 4.5 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 2.4 8 100 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 50 Ω 10 V/ns PD TC = 25°C 55 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-220 TO-252 (TO-220) 1.13/10 Nm/lb.in. 4 0.8 Symbol Test Conditions (TJ = 25°C unless otherwise specified) D S (TAB) TO-252 AA (IXTY) G g g (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packageS z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 500 VGS(th) VDS = VGS, ID = 25 μA 3.0 IGSS VGS = ± 30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) G S TJ TJM Tstg TL TSOLD TO-220 (IXTP) TJ = 125°C VGS = 10 V, ID = 0.5 ID25, Note 1 V 5.5 V ± 50 nA 1 50 μA μA 3.75 Ω Advantages z Easy to mount z Space savings z High power density DS99445E(04/06) © 2006 IXYS All rights reserved IXTP 2R4N50P IXTY 2R4N50P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, Note 1 1.5 2.5 S 240 pF 31 pF Crss 4 pF td(on) 24 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 29 ns td(off) RG = 50 Ω (External) 65 ns tf 28 ns Qg(on) 6.1 nC 1.8 nC 2.9 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain 2.25 °C/W RthJC RthCS TO-220 (IXTP) Outline (TO-220) °C/W 0.25 Source-Drain Diode Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 2.4 A ISM Repetitive 7.0 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 2.4 A, -di/dt = 100 A/μs VR = 100 V; V GS = 0 V 400 TO-252 AA (IXTY) Outline ns Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Pins: 1 - Gate 3 - Source Dim. Millimeter Min. Max. 2 - Drain 4 - Drain Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTP 2R4N50P IXTY 2R4N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 2.4 4.5 VGS = 10V 2 VGS = 10V 4 8V 7V 1.6 I D - Amperes I D - Amperes 3.5 1.2 6V 0.8 7V 3 2.5 2 6V 1.5 1 0.4 0.5 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 3 6 9 V D S - Volts 15 18 21 24 27 30 V D S - Volts Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 2.4 3.4 VGS = 10V 3.1 VGS = 10V 1.6 R D S ( o n ) - Normalized 7V 2 I D - Amperes 12 6V 1.2 0.8 5V 0.4 2.8 2.5 2.2 I D = 2.4A 1.9 1.6 I D = 1.2A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 V D S - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.1 2.7 VGS = 10V 2.8 2.4 TJ = 125º C 2.1 2.5 I D - Amperes R D S ( o n ) - Normalized 0 2.2 1.9 1.6 1.3 1.8 1.5 1.2 0.9 0.6 TJ = 25º C 1 0.3 0.7 0.0 0 0.5 1 1.5 2 2.5 I D - Amperes © 2006 IXYS All rights reserved 3 3.5 4 4.5 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTP 2R4N50P IXTY 2R4N50P Fig. 8. Tr ans conductance Fig. 7. Input Adm ittance 3.5 4 3 3.5 TJ = 125 º C - Siemens 25 º C fs -40 º C g I D - Amperes TJ = -40 º C 3 2.5 2 1.5 1 25 º C 125 º C 2.5 2 1.5 1 0.5 0.5 0 0 4 4.5 5 5.5 6 6.5 0 7 0.5 1 1.5 V G S - V olts Fig. 9. Source Cur re nt vs . Source -To-Drain V oltage 2.5 3 3.5 4 6 7 Fig. 10. Gate Charge 10 7 9 V DS = 250V 8 I D = 1.2A 7 I G = 10m A 6 V G S - Volts 5 I S - Amperes 2 I D - A mperes 4 3 TJ = 125 º C 2 6 5 4 3 2 TJ = 25 º C 1 1 0 0 0.4 0.5 0.6 0.7 0.8 0 0.9 1 2 Q V S D - V olts 3 G 4 5 - nanoCoulombs Fig. 12. Forw ar d-Bias Safe Ope r ating Are a Fig. 11. Capacitance 10 1000 f = 1MH z 25µs C is s 100 I D - Amperes Capacitance - picoFarads R DS(on) Lim it C os s 10 100µs 1 1m s DC 10m s T J = 150 º C T C = 25 º C C rs s 1 0.1 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXTP 2R4N50P IXTY 2R4N50P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R ( t h ) J C - ºC / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2006 IXYS All rights reserved 0.1 1 10