Product Report

05/19/2004
RELIABILITY REPORT
FOR
DS2503, Rev C1
Dallas Semiconductor
4401 South Beltwood Parkway
Dallas, TX 75244-3292
Prepared by:
Ken Wendel
Reliability Engineering Manager
Dallas Semiconductor
4401 South Beltwood Pkwy.
Dallas, TX 75244-3292
Email : [email protected]
ph: 972-371-3726
fax: 972-371-6016
mbl: 214-435-6610
Conclusion:
The following qualification successfully meets the quality and reliability standards required of all Dallas
Semiconductor products and processes:
DS2503, Rev C1
In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing
product will continue to meet Maxim's quality and reliability standards. The current status of the
reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html.
Device Description:
A description of this device can be found in the product data sheet. You can find the product data
sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm.
Reliability Derating:
The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that
are temperature accelerated.
AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts
AfT = Acceleration factor due to Temperature
tu = Time at use temperature (e.g. 55°C)
ts = Time at stress temperature (e.g. 125°C)
k = Boltzmann’s Constant (8.617 x 10-5 eV/°K)
Tu = Temperature at Use (°K)
Ts = Temperature at Stress (°K)
Ea = Activation Energy (e.g. 0.7 ev)
The activation energy of the failure mechanism is derived from either internal studies or industry
accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms
or their activation energies are unknown. All deratings will be done from the stress ambient
temperature to the use ambient temperature.
An exponential model will be used to determine the acceleration factor for failure mechanisms,
which are voltage accelerated.
AfV = exp(B*(Vs - Vu))
AfV = Acceleration factor due to Voltage
Vs = Stress Voltage (e.g. 7.0 volts)
Vu = Maximum Operating Voltage (e.g. 5.5 volts)
B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.)
The Constant, B, related to the failure mechanism is derived from either internal studies or industry
accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are
unknown. All deratings will be done from the stress voltage to the maximum operating voltage.
Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the
60% or 90% confidence level (Cf).
The failure rate, Fr, is related to the acceleration during life test by:
Fr = X/(ts * AfV * AfT * N * 2)
X = Chi-Sq statistical upper limit
N = Life test sample size
Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate
is related to MTTF by:
MTTF = 1/Fr
NOTE: MTTF is frequently used interchangeably with MTBF.
The calculated failure rate for this device/process is:
FAILURE RATE:
MTTF (YRS): 27143
FITS: 4.2
The parameters used to calculate this failure rate are as follows:
Cf: 60%
Ea: 0.7
B: 0
Tu: 25
°C
Vu: 5.5
Volts
The reliability data follows. A the start of this data is the device information. The next section is the
detailed reliability data for each stress. The reliability data section includes the latest data available
and may contain some generic data.
Device Information:
Process:
Passivation:
Die Size:
Number of Transistors:
Interconnect:
Gate Oxide Thickness:
E6ES-2P1M,HPVt,EPROM,NRDSD,ESD-PD,N+ESD ALOCOS:GOI
Passivation w/OxyNitride
92 x 58
1
Aluminum / 1% Silicon / 0.5% Copper
150 Å
ELECTRICAL CHARACTERIZATION
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
ESD SENSITIVITY
0409
EOS/ESD S5.1 HBM 2000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0409
EOS/ESD S5.1 HBM 4000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0409
EOS/ESD S5.1 HBM 8000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0409
IEC 1000-4-2 CONTACT 2000 VOLTS
10
PUL'S
3
0
ESD SENSITIVITY
0409
IEC 1000-4-2 CONTACT 4000 VOLTS
10
PUL'S
3
0
ESD SENSITIVITY
0409
IEC 1000-4-2 CONTACT 8000 VOLTS
10
PUL'S
3
2
LATCH-UP
0409
JESD78, Vsupply TEST 25C
6
0
LATCH-UP
0409
JESD78, Vsupply TEST 125C
6
0
Total:
FAILS
2
OPERATING LIFE
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
HIGH TEMP OP LIFE
0408
125C, 6.0 VOLTS
1000 HRS
77
0
HIGH TEMP OP LIFE
0409
125C, 6.0 VOLTS
1000 HRS
77
0
HIGH VOLTAGE LIFE
0411
125C, 6.0 VOLTS
1000 HRS
77
0
Total:
FAILS
0
STORAGE LIFE
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
STORAGE LIFE
0408
1000 HRS
150C
77
FAILS
0
STORAGE LIFE
0409
150C
1000 HRS
77
Total:
0
0
TEMPERATURE CYCLE
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
TEMP CYCLE
0411
1000 CYS
-55C TO 125C
Total:
FAILURE RATE:
MTTF (YRS): 27143
FITS: 4.2
77
FAILS
0
0