DS1307 - Maxim

01/08/04
RELIABILITY REPORT
FOR
DS1307, Rev A6
Dallas Semiconductor
4401 South Beltwood Parkway
Dallas, TX 75244-3292
Prepared by:
Ken Wendel
Reliability Engineering Manager
Dallas Semiconductor
4401 South Beltwood Pkwy.
Dallas, TX 75244-3292
Email : [email protected]
ph: 972-371-3726
fax: 972-371-6016
mbl: 214-435-6610
Conclusion:
The following qualification successfully meets the quality and reliability standards required of all Dallas
Semiconductor products and processes:
DS1307, Rev A6
In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing
product will continue to meet Maxim's quality and reliability standards. The current status of the
reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html.
Device Description:
A description of this device can be found in the product data sheet. You can find the product data
sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm.
Reliability Derating:
The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that
are temperature accelerated.
AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts
AfT = Acceleration factor due to Temperature
tu = Time at use temperature (e.g. 55°C)
ts = Time at stress temperature (e.g. 125°C)
k = Boltzmann‚Äôs Constant (8.617 x 10-5 eV/°K)
Tu = Temperature at Use (°K)
Ts = Temperature at Stress (°K)
Ea = Activation Energy (e.g. 0.7 ev)
The activation energy of the failure mechanism is derived from either internal studies or industry
accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms
or their activation energies are unknown. All deratings will be done from the stress ambient
temperature to the use ambient temperature.
An exponential model will be used to determine the acceleration factor for failure mechanisms,
which are voltage accelerated.
AfV = exp(B*(Vs - Vu))
AfV = Acceleration factor due to Voltage
Vs = Stress Voltage (e.g. 7.0 volts)
Vu = Maximum Operating Voltage (e.g. 5.5 volts)
B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.)
The Constant, B, related to the failure mechanism is derived from either internal studies or industry
accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are
unknown. All deratings will be done from the stress voltage to the maximum operating voltage.
Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the
60% or 90% confidence level (Cf).
The failure rate, Fr, is related to the acceleration during life test by:
Fr = X/(ts * AfV * AfT * N * 2)
X = Chi-Sq statistical upper limit
N = Life test sample size
Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate
is related to MTTF by:
MTTF = 1/Fr
NOTE: MTTF is frequently used interchangeably with MTBF.
The calculated failure rate for this device/process is:
FAILURE RATE:
MTTF (YRS): 168453
FITS: 0.7
The parameters used to calculate this failure rate are as follows:
Cf: 60%
Ea: 0.7
B: 0
Tu: 25
°C
Vu: 5.5
Volts
The reliability data follows. A the start of this data is the device information. The next section is the
detailed reliability data for each stress. The reliability data section includes the latest data available.
Device Information:
Process:
Passivation:
Die Size:
Number of Transistors:
Interconnect:
Gate Oxide Thickness:
1P, 2M, 0.8um, ESD Pdepletion,HP Vts,WJ BPSG,Ti/TiN M1+M2,
Passivation w/Nov TEOS Oxide-Nitride
67 x 75
13000
Aluminum / 1% Silicon / 0.5% Copper
175 Å
ELECTRICAL CHARACTERIZATION
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 500 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 1000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 2000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 4000 VOLTS
1
PUL'S
3
0
ESD SENSITIVITY
0336
EOS/ESD S5.1 HBM 8000 VOLTS
1
PUL'S
3
0
LATCH-UP
0336
JESD78, I-TEST 125C
6
0
LATCH-UP
0336
JESD78, Vsupply TEST 125C
6
0
Total:
FAILS
0
OPERATING LIFE
DESCRIPTION
DATE CODE CONDITION
READPOINT QUANTITY
FAILS
INFANT LIFE
0032
125C, 6.0 VOLTS
48
HRS
234
0
HIGH VOLTAGE LIFE
0032
125C, 6.0 VOLTS
1000 HRS
77
0
INFANT LIFE
0105
125C, 7.0 VOLTS
48
HRS
232
0
HIGH VOLTAGE LIFE
0105
125C, 7.0 VOLTS
1000 HRS
77
0
INFANT LIFE
0105
125C, 6.0 VOLTS
48
HRS
234
0
HIGH VOLTAGE LIFE
0105
125C, 6.0 VOLTS
1000 HRS
77
0
HIGH VOLTAGE LIFE
0115
125C, 7.0 VOLTS
1000 HRS
77
0
HIGH VOLTAGE LIFE
0119
125C, 7.0 VOLTS
1000 HRS
80
0
HIGH VOLTAGE LIFE
0133
125C, 6.0 VOLTS
1000 HRS
80
0
HIGH VOLTAGE LIFE
0135
125C, 6.0 VOLTS
1000 HRS
80
0
HIGH VOLTAGE LIFE
0135
125C, 6.0 VOLTS
1000 HRS
80
0
HIGH VOLTAGE LIFE
0143
125C, 7.0 VOLTS
1000 HRS
80
0
HIGH VOLTAGE LIFE
0204
125C, 6.0 VOLTS
1000 HRS
80
0
HIGH VOLTAGE LIFE
0204
125C, 7.0 VOLTS
1000 HRS
80
0
HIGH VOLTAGE LIFE
0226
125C, 6.0 VOLTS
1000 HRS
80
0
HIGH VOLTAGE LIFE
0234
125C, 7.0 VOLTS
1000 HRS
80
0
HIGH VOLTAGE LIFE
0236
125C, 7.0 VOLTS
1000 HRS
45
0
HIGH TEMP OP LIFE
0304
125C, 5.25 VOLTS
1000 HRS
80
0
HIGH TEMP OP LIFE
0317
125C, 5.5 VOLTS
1000 HRS
45
0
HIGH TEMP OP LIFE
0317
125C, 5.5 VOLTS
1000 HRS
45
0
HIGH TEMP OP LIFE
0321
125C, 5.5 VOLTS
1000 HRS
80
0
HIGH TEMP OP LIFE
0336
125C, 5.5 VOLTS
192
77
0
HRS
Total:
FAILURE RATE:
MTTF (YRS): 168453
FITS: 0.7
0