ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS(ON)max 0.045 V : ETS,typ TBD μJ Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory) • Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions • Inherent Radiation Tolerance >100K TID • Positive Temperature Coefficient for Ease of Paralleling • Extremely Fast Switching with No “Tail” Current at 150°C • 1200 Volt Drain-Source Blocking Voltage 4 • RDS(on)max of 0.045 • Voltage Controlled • Low Gate Charge • Low Intrinsic Capacitance D (2,4) G (1) APPLICATIONS: • Satellite Solar Inverters TO-258 • Mil Spec Power Supplies - Switch Mode - Uninterrupted • Jet Engine Electronics • Down-hole Electronics (Motor / Compressor Control) S (3) Internal Schematic 123 Non-isolated tab version shown. For isolated tab version, tab (4) is No Connect. MAXIMUM RATINGS Parameter Symbol ID,Tj=125 Conditions Tj=125°C Value 50 ID,Tj=150 Tj=150°C 40 PulsedDrainCurrent(1) ShortCircuitWithstandTime IDM Tc=25°C 150 A tSC VDD<800V,TC<125°C 50 μS PowerDissipation PD Tc=25°C TBD W GateͲSourceVoltage VGS ContinuousDrainCurrent OperatingandStorageTemperature AC (2) Ͳ15to+15 Tj,Tj,stg Tsold LeadTemperatureforSoldering 1/8"fromcase<10s (1)Limitedbypulsewidth (2)RgEXT=1ohm,tp<200ns,seeFigure5forstaticconditions Unit A V Ͳ55to+200* o 260 o C C *Consultfactoryfor260OC THERMAL CHARACTERISTICS Value Parameter ThermalResistance,junctionͲtoͲcase ThermalResistance,junctionͲtoͲambient ASJD1200R045 Rev. 0.1 06/11 Symbol Rth,JC Typ Ͳ Max TBD Rth,JA Ͳ TBD Unit °C/W For more products and information, please visit our website at www.micross.com Micross Components reserves the right to change products or specifications without notice. 1 ADVANCE INFORMATION SiC JFET ASJD1200R045 ELECTRICAL CHARACTERISTICS Parameter Conditions Min Value Typ Max VGS=Ͳ15V,ID=600ʅA 1200 Ͳ Ͳ Ͳ 2 20 Tj=150 C VGS=Ͳ15V,VDS=0V Ͳ 20 400 Ͳ Ͳ0.1 Ͳ0.6 VGS=Ͳ15V,VDS=1200V Ͳ Ͳ0.1 Ͳ Ͳ 0.035 0.045 Symbol Unit OffCharacteristics DrainͲSourceBlockingVoltage BVDS VDS=1200V,VGS=Ͳ15V, TotalDrainLeakageCurrent IDSS Tj=25oC VDS=1200V,VGS=Ͳ15V, o TotalGateReverseLeakage IGSS V μA mA OnCharacteristics GateThresholdVoltage VGS(th) ID=40A,VGS=2V, Tj=25°C ID=40A,VGS=2V, Tj=100°C VDS=1V,ID=34mA Ͳ6.00 Ͳ Ͳ4.00 V GateForwardCurrent IGFWD VGS=2V Ͳ 0 Ͳ mA RG f=1MHz,drainͲsourceshorted Ͳ 4 Ͳ : RG(on) VGS>2.7V Ͳ 0.25 Ͳ : Ͳ 1340 Ͳ Ͳ 206 Ͳ Ͳ 194 Ͳ Ͳ 110 Ͳ DrainͲSourceOnͲresistance GateResistance RDS(on) DynamicCharacteristics InputCapacitance Ciss OutputCapacitance Coss ReverseTransferCapacitance Crss EffectiveOutputCapacitance, energyrelated Co(er) VDD=100V VDS=0Vto600V, VGS=0V : Ͳ 0.07 Ͳ SwitchingCharacteristics TurnͲOnDelay ton Ͳ TBD Ͳ RiseTime tr Ͳ TBD Ͳ TurnͲOffDelay toff Ͳ TBD Ͳ Ͳ TBD Ͳ Ͳ TBD Ͳ FallTime tf VDS=600V,ID=40A, InductiveLoad,TJ=25oC TurnͲOnEnergy Eon TurnͲOffEnergy Eoff Ͳ TBD Ͳ TotalSwitchingEnergy Ets Ͳ TBD Ͳ TurnͲOnDelay ton Ͳ TBD Ͳ RiseTime tr Ͳ TBD Ͳ TurnͲOffDelay toff VDS=600V,ID=40A, Ͳ TBD Ͳ FallTime tf InductiveLoad,TJ=150oC Ͳ TBD Ͳ TurnͲOnEnergy Eon Ͳ TBD Ͳ TurnͲOffEnergy Eoff Ͳ TBD Ͳ TotalSwitchingEnergy Ets Ͳ TBD Ͳ TotalGateCharge Qg Ͳ 65 Ͳ GateͲSourceCharge Qgs Ͳ 4 Ͳ GateͲDrainCharge Qgd Ͳ 54 Ͳ ASJD1200R045 Rev. 0.1 06/11 VDS=600V,ID=5A, VGS=+2.5V pF ns μJ ns μJ nC Micross Components reserves the right to change products or specifications without notice. 2 ADVANCE INFORMATION SiC JFET ASJD1200R045 MECHANICAL DRAWING $IA "3# 4YP "3# NOTE: 1. Dimensions in mm (inches) 2. Controlling dimensions (inches) ORDERING INFORMATION BasePartNumber ASJD1200R045 Configuration Blank=NonͲisolatedTab S=IsolatedTab Package JunctionTemp.Range M=TOͲ258 Ͳ EL EX TempRanges: EL=ElevatedTemp.Range,Ͳ55oCto200oC(TJ) Processing Blank /V /S EX=ExtremeTemp.Range,Ͳ55oCto260oC(TJ)(consultfactory) Processing: ExamplePartNumbers: Blank=Commercial/StandardProcessing MILͲPRFͲ19500EquivalentProcessingAvailablePerSCD /V=JANTXMILͲPRFͲ19500Equivalent(futurestandardoffering) /S=JANSMILͲPRFͲ19500Equivalent(futurestandardoffering) ASJD1200R045SMͲEL ASJD1200R045MͲEX has commercial plastic versions of this product available. Please refer to the SemiSouth website http://www.semisouth.com/products/products.html for datasheet specifications and ordering information. The SemiSouth part number is SJDP120R045 and is supplied in a TO-247 plastic package. ASJD1200R045 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 3 ADVANCE INFORMATION SiC JFET ASJD1200R045 DOCUMENT TITLE Normally-ON Trench Silicon Carbide Power JFET Rev # 0.0 History Initial Release Release Date December 2010 Status Advanced Information 0.1 Replaced TO-257 package with TO-258 package June 2011 Advance Information ASJD1200R045 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 4