D1100B Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Standard Recovery Diodes (Hockey PUK Version), 1100A/1400A FEATURES Wide current range High voltage ratings up to 3200 V High surge current capabilities Diffused junction Hockey PUK version Case style B-43(E-PUK), Nell’s B-type Capsule Lead (Pb)-free TYPICAL APPLICATIONS B-43(E-PUK) Converters Power supplies (Nell’s B-type Capsule ) Machine tool controls High power drives Medium traction applications PRODUCT SUMMARY IF(AV) 1100A/1400A MAJOR RATINGS AND CHARACTERISTICS D1100B UNIT TEST CONDITIONS PARAMETER IF(AV) 08 TO 20 25 TO 32 1400 1100 A 55 55 ºC 2500 2000 A 25 25 ºC 50 HZ 13000 10500 60 HZ 13610 11000 50 HZ 845 551 60 HZ 768 502 800 to 2000 2500 to 3200 V -40 to 175 -40 to 150 ºC T hs I F(RMS) T hs I FSM A I 2t V RRM Typical TJ kA 2 s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 16 1600 1700 D1100B www.nellsemi.com 20 2000 2100 25 2500 2600 30 3000 3100 32 3200 3300 Page 1 of 7 lRRM, MAXIMUM AT TJ = TJ MAXIMUM mA 35 D1100B Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION D1100B SYMBOL PARAMETER UNIT TEST CONDITIONS 08 to 20 Maximum average forward current at heatsink temperature Maximum RMS forward current I F(RMS) 55 (85) ºC 2500 2000 A No voltage reapplied 13000 10500 13610 11000 100%V RRM reapplied 10920 8820 11430 9240 No voltage initial T J = T J maximum reapplied 845 551 768 502 100%V RRM reapplied 601 389 548 354 t = 0.1 to 10 ms, no voltage reapplied 8450 5510 (16.7% x π x l F(AV) < I < π x l F(AV) ) T J =T J maximum 0.78 0.84 25°C heatsink temperature double side cooled t = 8.3ms I FSM non-reptitive surge current A t = 10ms t = 8.3ms t = 10ms Maximum l²t for fusing t = 8.3ms I 2t t = 10ms t = 8.3ms I 2√t Maximum l²√t for fusing Low level value of threshold voltage A 55 (85) t = 10ms Maximum peak, one cycle 1400 (795) 1100 (550) 180° conduction, half sine wave Double side (single side) cooled I F(AV) 25 to 32 V F(TO)1 Sinusoidal half wave, kA 2 s kA 2√s V High level value of threshold voltage Low level value of forward slope resistance V F(TO)2 r t1 (I > π x l F(AV) ),T J =T J maximum 0.94 0.98 (16.7% x π x l F(AV) < I < π x l F(AV) ) T J =T J maximum 0.35 0.40 mΩ High level value of forward slope resistance Maximum forward voltage drop r t2 V FM (I > π x l F(AV) ),T J =T J maximum 0.26 0.38 l pk = 1500A, T J =T J maximum , t p = 10 ms sinusoidal wave 1.30 1.45 V THERMAL AND MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Maximum junction operating temperature range TEST CONDITIONS TJ VALUES 800V to 2000V -40 to 175 2500V to 3200V -40 to 150 T stg Maximum storage temperature range Maximum thermal resistance, junction to heatsink R thJ-hs UNIT ºC -40 to 200 DC operation single side cooled 0.076 DC operation double side cooled 0.038 K/W Mounting force, ±10% Approximate weight Case style 9800 (1000) N (kg) 83 g B-43 (E-PUK), Nell’s B-type Capsule RthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION SINGLE SIDE RECTANGULAR CONDUCTION DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.007 0.007 0.005 0.005 120° 90° 0.008 0.010 0.008 0.010 0.008 0.011 0.008 0.011 60° 0.015 0.015 0.016 0.016 30° 0.026 0.026 0.026 0.026 TEST CONDUCTIONS UNITS T J = T J maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC www.nellsemi.com Page 2 of 7 D1100B Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics 180 800V to 2000V (Single side cooled) R thJ-hs (DC) = 0.076K/W 160 140 120 Conduction Angle 100 30° 60° 90° 80 120° 180° 60 40 0 200 600 400 800 Maximum allowable heatsink temperature(˚C) Maximum allowable heatsink temperature(˚C) 180 120 Conduction Period 100 80 60 30° 60° 40 90° 120° 180° 800 400 1200 DC 1600 Average forward current (A) Average forward current (A) Fig.3 Current ratings characteristics Fig.4 Current ratings characteristics 180 800V to 2000V (Double side cooled) R thJ-hs (DC) = 0.038 K/W 160 140 120 Conduction Angle 100 30° 60° 80 90° 120° 60 180° 40 20 0 400 800 1200 1600 Maximum allowable heatsink temperature(˚C) Maximum allowable heatsink temperature(˚C) 140 20 0 1000 180 800V to 2000V (Double side cooled) R thJ-hs (DC) = 0.038 K/W 160 140 120 100 2000 Conduction Period 30° 60° 80 90° 60 120° 180° 40 20 DC 0 0 500 1000 1500 2000 2500 3000 Average forward current (A) Average forward current (A) Fig.5 Forward power loss characteristics Fig.6 Forward power loss characteristics 4500 3000 180° 120° 90° 2500 60° 30° RMS Limit 2000 1500 1000 Conduction Angle T J = 175°C 800V to 2000V 500 Maximum average forward power loss(W) 3500 Maximum average forward power loss(W) 800V to 2000V (Single side cooled) R thJ-hs (DC) = 0.076K/W 160 4000 DC 180° 3500 120° 3000 90° 2500 60° 30° 2000 1500 1000 Conduction Period T J = 175°C 800V to 2000V 500 0 RMS Limit 0 0 400 800 1200 1600 0 Average forward current (A) www.nellsemi.com 500 1000 1500 2000 2500 3000 Average forward current (A) Page 3 of 7 D1100B Series SEMICONDUCTOR RoHS RoHS Nell High Power Products At Any Rated Load Condition And With Rated V RRM Applied Following Surge initial T J = 175°C @ 60Hz 0.0083 s @ 50Hz 0.0100 s 11000 10000 9000 8000 7000 6000 5000 4000 3000 800V to 2000V 10 1 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J = 175°C 13000 12000 No Voltage Reapplied @50Hz Rated V RRM Reapplied @50Hz 11000 10000 9000 8000 7000 6000 5000 800V to 2000V 4000 3000 0.01 0.1 1 Pulse train duration (S) Fig.9 Current ratings characteristcs Fig.10 Current ratings characteristcs 2500V to 3200V (Single side cooled) R thJ-hs (DC) = 0.076K/W 140 130 120 110 Conduction Angle 100 90 80 30° 60° 70 90° 60 120° 180° 50 150 40 2500V to 32000V (Single side cooled) R thJ-hs (DC) = 0.076K/W 140 130 120 110 Conduction Period 100 90 80 70 30° 60° 60 90° 120° 50 180° DC 40 0 200 400 600 800 0 200 400 600 800 1000 1200 1400 Average forward current (A) Average forward current (A) Fig.11 Current ratings characteristcs Fig.12 Current ratings characteristcs 150 150 130 120 110 100 Conduction Angle 90 80 70 30° 60 60° 90° 120° 50 180° 40 2500V to 32000V (Single side cooled) R thJ-hs (DC) = 0.038K/W 140 Maximum allowable heatsink temperature(˚C) 2500V to 3200V (Double side cooled) R thJ-hs (DC) = 0.038K/W 140 Maximum allowable heatsink temperature(˚C) 14000 Number of equal amplitude half cycle current pulses (N) 150 Maximum allowable heatsink temperature(˚C) 100 Peak half sine wave forward current(A) 12000 Fig.8 Maximum non-repetitive surge current single and double side cooled Maximum allowable heatsink temperature(˚C) Peak half sine wave forward current(A) Fig.7 Maximum non-repetitive surge current single and double side cooled 30 130 120 110 100 Conduction Period 90 80 30° 70 60° 60 90° 120° 50 40 180° 30 20 DC 20 0 200 400 600 800 1000 1200 1400 0 Average forward current (A) www.nellsemi.com 400 800 1200 1600 2000 2400 Average forward current (A) Page 4 of 7 D1100B Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.13 Forward power loss characteristics Fig.14 Forward power loss characteristics 3500 180° 2500 120° 90° 60° 30° 2000 RMS Limit 1500 1000 500 Conduction Angle T J = 150°C 2500V to 3200V Maximum average forward power loss (W) Maximum average forward power loss (W) 3000 0 DC 180° 3000 120° 90° 2500 2000 1500 1000 Conduction Period T J = 150°C 2500V to 3200V 500 0 0 200 400 600 800 1000 1200 1400 0 400 Average forward current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge initial T J = 150°C @ 60Hz 0.0083 s @ 50Hz 0.0100 s 8000 7000 6000 5000 4000 2500V to 3200V 10 1 100 11000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge initial T J = 150°C @ 50 Hz @ 60Hz 0.0083 s @ 50Hz 0.0100 s 10000 9000 8000 7000 6000 5000 4000 2500V to 3200V 3000 0.01 0.1 1 Pulse train duration (S) Number of equal amplitude half cycle current pulses (N) Fig.17 Forward voltage drop characteristcs Fig.18 Forward voltage drop characteristcs 10000 Instantaneous forward current (A) 10000 Instantaneous forward current (A) 1200 1600 2000 2400 Fig.16 Maximum non-repetitive surge current single and double side cooled Peak half sine wave forward current (A) Peak half sine wave forward current (A) 10000 9000 800 Average forward current (A) Fig.15 Maximum non-repetitive surge current single and double side cooled 3000 RMS Limit 60° 30° T J = 25°C T J = 175°C 1000 800V to 2000V 1 1.5 2 2.5 3 3.5 4 1000 2500V to 3200V 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous forward voltage (V) Instantaneous forward voltage (V) www.nellsemi.com T J = 150°C 100 0.5 100 0.5 T J = 25°C Page 5 of 7 5 D1100B Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Transient thermal lmpedance RthJ-hs (K/W) Fig.19 Thermal lmpedance RthJ-hs characteristics 0.1 Steady State Value RthJ-hs (DC) = 0.076 K/W (Single side cooled) RthJ-hs(DC) = 0.038 K/W (Double side cooled) (DC Operation) 0.01 0.001 0.001 0.01 0.1 1 10 Square wave pulse duration (s) ORDERING INFORMATION TABLE Device code www.nellsemi.com D 1100 B 20 1 2 3 4 1 - "D" for standard recovery diode 2 - Maximum average forward current, "1100" for 1400A and 1100A 3 - Case style : "B" for Nell's B-type Capsule, B-43 (E-PUK) 4 - Voltage code, code x 100 = VRRM Page 6 of 7 D1100B Series SEMICONDUCTOR RoHS RoHS Nell High Power Products B-43 (E-PUK), Nell's B-type Capsule Ø 3.5 (0.14) NOM. x Ø42 (1.65) MAX. 1.8 (0.07) deep MIN. both ends Ø 25.3 (1) MAX. 2 places 14.4(0.57) 15.4(0.61) 0.8(0.03) MIN. both ends Ø40.5(1.59) MAX. K A All dimensions in millimeters (inches) www.nellsemi.com Page 7of 7