RoHS RoHS 1460PTG Series SEMICONDUCTOR Nell High Power Products Distributed Gate Thyristors (Hockey PUK Version), 1460A FEATURES Distributed center amplifying gate Metal case with ceramic insulator lnternational standard case TO-200AC (K-PUK), Nell’s D-type Capsule Compliant to RoHS Low on-state and switching losses Fast turn-on time, tgt ≤ 3µs di/dt > 1500 A/µs TO-200AC(K-PUK) (Nell’s D-type Capsule) TYPICAL APPLICATIONS DC and AC motor controls Controlled DC power supplies AC controllers Ideal for Impulse Magnetizer PRODUCT SUMMARY IT(AV) 1460A MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER VALUES Double side cooled, single phase, 50Hz, 180° half-sine wave IT(AV) 1460 A 55 ºC 2900 A T hs 25 ºC 50 HZ 20 60 HZ 21 50 HZ 2000 60 HZ 1830 T hs I T(RMS) I TSM UNIT kA I 2t V DRM /V RRM kA 2 s 1600 to 3200 t gt Typical 2.0 Tq Maximum 250 TJ V µs -40 to 125 ºC ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 16 1600 1700 18 1800 1900 20 2000 2100 24 2400 2500 26 2600 2700 30 3000 3100 32 3200 3300 1460PTGxxD0 www.nellsemi.com Page 1 of 8 lDRM/lRRM, MAXIMUM AT TJ = TJ MAXIMUM mA 100 1460PTG Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION PARAMETER SYMBOL Maximum average current at heatsink temperature Maximum RMS on-state current TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled I T(AV) I T(RMS) DC at 25°C heatsink temperature double side cooled t = 10ms Maximum peak, one cycle t = 8.3ms I TSM non-reptitive surge current t = 8.3ms t = 10ms 1460(630) A 55/(85) ºC 2900 A No voltage reapplied 20 100%V RRM reapplied 16.8 No voltage reapplied t = 8.3ms I 2t t = 10ms 21 Sinusoidal half wave, 17.6 initial T J = T J maximum 2000 100%V RRM reapplied t = 8.3ms I 2√t Maximum l²√t for fusing UNIT KA t = 10ms Maximum l²t for fusing VALUES t = 0.1 to 10 ms, no voltage reapplied 1830 1411 1286 20000 Low level value of threshold voltage V T(TO)1 (16.7% x π x l T(AV) < I < π x l T(AV) ),T J =T J maximum 1.25 High level value of threshold voltage V T(TO)2 (I > π x l T(AV) ),T J =T J maximum 1.50 r t1 (16.7% x π x l T(AV) < I < π x l T(AV) ),T J =T J maximum 0.48 High level value on-state slope resistance r t2 (I > π x l T(AV) ),T J =T J maximum 0.44 l pk =3000A, T J =T J maximum , t p = 10 ms sine pulse 2.90 V TM Maximum holding current lH Typical latching current lL T J = 25°C, anode supply 12V resistive load kA 2√s V Low level value on-state slope resistance Maximum on-state voltage kA 2 s mΩ V 1000 mA 1500 SWITCHING PARAMETER Minimum non-repetitive rate of rise of turned-on current SYMBOL dl/dt Typical turn-off time tq Maximum gate controlled turn-on delay time td Maximum turn-on time t gt Typical reverse recovery time t rr Typical recovered charge Q rr Typical reverse recovery current I rm TEST CONDITIONS V D = 67% V DRM , I FG = 2A, T case =1 25°C l TM = 1000A, T J =T J maximum, dl/dt = 60A/µs. V R = 50V, dV/dt = 20 V/µs, V DR = 33% V DRM, t p = 1000µs VALUES UNIT 1500 A/µs 200 1.6 V D = 67% V DRM , I TM = 1000A, dl/dt = 60A/µs. I FG = 2A, t r = 0.5µs, T J = 25°C µs 3.0 9.5 I TM = 1000A, t p = 1000µs, dl/dt = 60A/µs. V R = 50V 3500 µC 315 A VALUES UNIT BLOCKING PARAMETER SYMBOL TEST CONDITIONS Minimum critical rate of rise of off-state voltage dV/dt T J =T J maximum, linear to 80% rated V DRM 200 V/µs Maximum peak reverse and off-state leakage current l RRM, l DRM, T J =T J maximum, rated V DRM /V RRM applied 100 mA www.nellsemi.com Page 2 of 8 1460PTG Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TRIGGERING SYMBOL PARAMETER VALUES TEST CONDITIONS Maximum peak gate power P GM Maximum average gate power I GM Maximum peak positive gate voltage +V GM Maximum peak negative gate voltage -V GM T J = T J maximum, t p ≤ 5 ms 30 T J = T J maximum, f = 50 Hz, d% = 50 5 T J = T J maximum, t p ≤ 5 ms 3 W P G(AV) Maximum peak positive gate current V 5 I GT 100 - 50 300 25 - 1.3 - T J = 25°C 1.0 3.0 T J = 125°C 0.8 - T J = 25°C Maximum required gate current/voltage are the lowest value which will trigger all units 12V anode to cathode applied T J = 125°C T J = -40°C DC gate voltage required to trigger DC gate current not to trigger V GT l GD T J = T J maximum DC gate voltage not to trigger A 20 T J = T J maximum, t p ≤ 5 ms T J = -40°C DC gate current required to trigger UNIT MAX. TYP. V GD Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to cathode applied mA V 10 mA 0.25 V VALUES UNIT THERMAL AND MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS TJ -40 to 125 T stg -40 to 150 ºC R th(J-hs) DC operation single side cooled 0.040 DC operation double side cooled 0.020 DC operation single side cooled 0.006 DC operation double side cooled 0.003 K/W Maximum thermal resistance, case to heatsink R th(C-hs) Mounting force, ±10% Approximate weight Case style 24500 (2500) N (kg) 500 g TO-200AC (K-PUK), Nell’s D-type Capsule) RthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE TEST CONDUCTIONS UNITS T J = T J maximum K/W DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.003 0.003 0.002 0.002 120° 90° 0.004 0.005 0.004 0.005 0.004 0.005 60° 0.007 0.007 0.007 0.004 0.005 0.007 30° 0.012 0.012 0.012 0.012 Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC www.nellsemi.com Page 3 of 8 1460PTG Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Current ratings characteristics (Single side cooled) R thJ-hs (DC) = 0.04 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 120° 80 180° 130 Maximum allowable heatsink temperature(˚C) Maximum allowable heatsink temperature(˚C) 130 Fig.2 Current ratings characteristics 70 0 110 Conduction Period 100 90 30° 60° 80 90° 120° 180° DC 0 200 400 600 800 1000 1200 1400 Average on-state current (A) Average on-state current (A) Fig.3 Current ratings characteristics Fig.4 Current ratings characteristics 130 (Double side cooled) R thJ-hs (DC) = 0.02 K/W 120 110 100 Conduction Angle 90 80 70 60 30° 50 60° 90° 90° 120° Maximum allowable heatsink temperature(˚C) Maximum allowable heatsink temperature(˚C) 120 70 100 200 300 400 500 600 700 800 900 130 (Double side cooled) R thJ-hs (DC) = 0.02 K/W 120 110 100 Conduction Period 90 30° 80 60° 90° 70 120° 180° 60 50 DC 180° 40 40 0 400 800 1200 1600 0 400 800 1200 1600 2400 2000 Average on-state current (A) Average on-state current (A) Fig.5 On-state power loss characteristics Fig.6 On-state power loss characteristics 5000 6000 180° 4000 90° 3500 60° 30° DC 5500 120° 3000 RMS Limit 2500 2000 1500 1000 Conduction Angle 500 Maximum average on-state power loss(W) 4500 Maximum average on-state power loss(W) (Single side cooled) R thJ-hs (DC) = 0.04 K/W T J = 125°C 180° 120° 90° 5000 4500 60° 4000 30° 3500 RMS Limit 3000 2500 2000 1500 Conduction Period 1000 T J = 125°C 500 0 0 0 400 800 1200 1600 0 Average on-state current (A) www.nellsemi.com 500 1000 1500 2000 Average on-state current (A) Page 4 of 8 2500 1460PTG Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.8 Maximum non-repetitive surge current single and double side cooled Peak half sine wave on-state current(A) Peak half sine wave on-state current(A) Fig.7 Maximum non-repetitive surge current single and double side cooled 18000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge initial T J = 125°C @ 60Hz 0.0083 s @ 50Hz 0.0100 s 16000 14000 12000 10000 8000 6000 1 100 10 22000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial T J = 125°C, @50Hz No Voltage Reapplied Rated V RRM Reapplied 20000 18000 16000 14000 12000 10000 8000 6000 0.01 0.1 Number of equal amplitude half cycle current pulses (N) 1 Pulse train duration (S) Instantaneous on-state current (A) Fig.9 Maximum on-state voltage drop characteristcs 10000 T J = 25°C 5000 T J = 125°C 2000 1000 500 0.5 1 1.5 2 2.5 3 3.5 4.5 4 5 5.5 Instantaneous on-state voltage (V) Transient thermal lmpedance Z th(J-hs) (K/W) Fig.10 Thermal lmpedance Z th(J-hs) characteristics 0.1 Steady State Value R th(J-hs) = 0.040 K/W (Single Side Cooled) R th(J-hs) = 0.020 K/W (Double Side Cooled) (DC Operation) 0.01 0.001 0.001 0.01 0.1 1 Square wave pulse duration (s) www.nellsemi.com Page 5 of 8 10 100 1460PTG Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.11 Gate characteristics - Trigger limits Fig.12 Gate characteristics - Power curves 6 20 Gate trigger voltage - V GT (V) 5 Max V G 4 l GT, V GT 1 0 -40°C 10°C 25°C 3 2 l GD, V GD 0 T J = 25°C 18 125°C Gate trigger voltage, V GT (V) T J = 25°C Min V G 0.25 0.5 0.75 16 14 Max V G 12 10 8 P GM = 30W 6 4 P GM = 5W 2 0 1 Min V G 0 6 4 8 10 Gate trigger current, l GT (A) Gate trigger current, l GT (A) Fig.13 Total recovered charge, Q rr Fig.14 Recovered charge, Q ra (50% chord) 10000 10000 T J = 125°C Total recovered charge, Q rr (µC) T J = 125°C Recovered charge, Q ra ( µC ) 2000A 1500A 1000A 500A 1000 2 10 100 2000A 1500A 1000A 500A 1000 1000 10 100 1000 Commutation rate-di/dt (A/µs) Commutation rate-di/dt (A/µs) Fig.15 Peak reverse recovery current, l rm Fig.16 Maximum recovery time, t rr (50% chord) 100 2000A 1500A T J = 125°C T J = 125°C Reverse recovery time, t rr (µs) Reverse recovery current, l rm (A) 10000 1000A 500A 1000 10 100 Commutation rate, di/dt (A/µs) www.nellsemi.com 10 1 10 1000 2000A 1500A 1000A 500A 100 Commutation rate, di/dt (A/µs) Page 6 of 8 1000 1460PTG Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.17 Reverse recovery energy per pulse Fig.18 Sine wave energy per pulse 10 3 10 T J = 125°C 2000A 1500A 1000A 10 2 Energy per pulse (J) Energy per pulse, E r (J) Snubber 0.5µs, 6.8 Ohms T J = 125°C V rm = 67% V RRM 500A 10 5kA 3kA 1 2kA 1kA 10 -1 500A 1 10 100 10 -2 10 -5 1000 250A Commutation rate, di/dt (A/µs) 10 -4 10 -3 Pulse width, (s) ORDERING INFORMATION TABLE Device code 1460 PTG 1 www.nellsemi.com 2 30 D 0 3 4 5 1 - Maximum average on-state current IT(AV), 1460 for 1460A 2 - PTG = Distribute gate thyristor 3 - Voltage code, cold × 100 = VRRM/VRRM 4 - D = PUK case TO-200AC (K-PUK), Nell’s D-type Capsule 5 - Terminal type, “0” for eyelet Page 7 of 8 10 -2 1460PTG Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TO-200AC (K-PUK) Creepage distance: 28.88(1.137) minimum Strike distance: 18.0(0.708) minimum 6.2(0.24) Min. Ø74.0(2.91) MAX. 4.7 (0.18) 20°±5° 43.2 (1.70) Ø3.5 (0.14) x 2.5 (0.1) deep, both ends 0.7(0.03) MIN. Ø47.0±0.1(1.85) 2 places Pin receptacle AMP. 60598-1 27.6(1.09) MAX. 0.7(0.03) MIN. Ø66(2.60) MAX. K G All dimensions in millimeters (inches) www.nellsemi.com Page 8 of 8 A