RoHS 1800PT Series RoHS SEMICONDUCTOR Nell High Power Products Phase Control Thyristors (Hockey PUK Version), 1800A FEATURES Center amplifying gate Metal case with ceramic insulator lnternational standard case TO-200AC (K-PUK) Nell’s D-type Capsule Compliant to RoHS Designed and qualified for industrial level TO-200AC(K-PUK) (Nell’s D-type Capsule) TYPICAL APPLICATIONS DC motor controls Controlled DC power supplies AC controllers PRODUCT SUMMARY IT(AV) 1800A MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER Double side cooled, single phase, 50Hz, 180° half-sine wave IT(AV) T hs I T(RMS) T hs I TSM VALUES UNIT 1800 A 55 ºC 3300 A 25 ºC 50 HZ 35000 60 HZ 36645 50 HZ 6125 60 HZ 5573 A I 2t V DRM /V RRM tq Typical TJ kA 2 s 800 to 1600 V 200 µs -40 to 125 ºC ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 1800PTxxD0 www.nellsemi.com Page 1 of 6 lDRM/lRRM, MAXIMUM AT TJ = TJ MAXIMUM mA 100 RoHS 1800PT Series RoHS SEMICONDUCTOR Nell High Power Products FORWARD CONDUCTION PARAMETER Maximum average current at heatsink temperature Maximum RMS on-state current SYMBOL I T(AV) I T(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25°C heatsink temperature double side cooled t = 10ms Maximum peak, one cycle non-reptitive surge current I TSM t = 8.3ms t = 10ms t = 8.3ms I 2t t = 10ms Maximum l²√t for fusing 1800(720) A 55(85) ºC 3300 A 35000 No voltage reapplied 36645 100%V RRM reapplied No voltage reapplied 29400 Sinusoidal half wave, initial T J = T J maximum 30782 6125 5573 100%V RRM reapplied 4322 t = 0.1 to 10 ms, no voltage reapplied 61250 t = 8.3ms I 2√t UNIT A t = 10ms t = 8.3ms Maximum l²t for fusing VALUES 3932 Low level value of threshold voltage V T(TO)1 (16.7% x π x l T(AV) < I < π x l T(AV) ),T J =T J maximum 0.90 High level value of threshold voltage V T(TO)2 (I > π x l T(AV) ),T J =T J maximum 1.00 r t1 (16.7% x π x l T(AV) < I < π x l T(AV) ),T J =T J maximum 0.17 High level value on-state slope resistance r t2 (I > π x l T(AV) ),T J =T J maximum 0.16 l pk =4000A, T J =T J maximum , t p =10 ms sine pulse 1.60 V TM Maximum holding current lH Typical latching current lL T J = 25°C, anode supply 12V resistive load kA 2√s V Low level value on-state slope resistance Maximum on-state voltage kA 2 s mΩ V 300 mA 500 SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time VALUES UNIT Gate drive 20V, 20Ω, t r ≤ 1µs T J =T J maximum, anode voltage ≤ 80% V DRM 1000 A/µs td Gate current 1A, dl g /dt =1 A/µs V d = 0.67 V DRM , T J = 25°C 1.90 tq l TM = 550A, T J =T J maximum, dl/dt = 40A/µs. V R = 50V, dV/dt = 20 V/µs, gate 0 V 100Ω, tp = 500µs SYMBOL dl/dt TEST CONDITIONS µs Typical turn-off time 200 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT Maximum critical rate of rise of off-state voltage dV/dt T J =T J maximum linear to 80% rated V DRM 500 V/µs Maximum peak reverse and off-state leakage current l RRM, l DRM, T J =T J maximum, rated V DRM /V RRM applied 100 mA www.nellsemi.com Page 2 of 6 RoHS 1800PT Series RoHS SEMICONDUCTOR Nell High Power Products TRIGGERING SYMBOL PARAMETER VALUES TEST CONDITIONS Maximum peak gate power P GM Maximum average gate power I GM Maximum peak positive gate voltage +V GM Maximum peak negative gate voltage -V GM T J = T J maximum, t p ≤ 5 ms 15 T J = T J maximum, f = 50 Hz, d% = 50 3 T J = T J maximum, t p ≤ 5 ms 3 W P G(AV) Maximum peak positive gate current V 5 I GT 200 - 100 200 50 - 1.4 - T J = 25°C 1.1 3 T J = 125°C 0.9 - T J = 25°C Maximum required gate current/voltage are the lowest value which will trigger all units 12V anode to cathode applied T J = 125°C T J = -40°C DC gate voltage required to trigger DC gate current not to trigger V GT l GD T J = T J maximum DC gate voltage not to trigger A 20 T J = T J maximum, t p ≤ 5 ms T J = -40°C DC gate current required to trigger UNIT MAX. TYP. V GD Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to cathode applied mA V 10 mA 0.25 V VALUES UNIT THERMAL AND MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS TJ -40 to 125 T stg -40 to 150 R thJ-hs ºC DC operation single side cooled 0.042 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled 0.003 K/W Maximum thermal resistance, case to heatsink R thC-hs Mounting force, ±10% Approximate weight Case style 24500 (2500) N (kg) 420 g TO-200AC (K-PUK), Nell’s D-type Capsule RthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDUCTIONS UNITS T J = T J maximum K/W DOUBLE SIDE SINGLE SIDE DOUBLE SIDE SINGLE SIDE 180° 0.003 0.003 0.002 0.002 120° 90° 0.004 0.005 0.004 0.005 0.004 0.005 0.004 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC www.nellsemi.com Page 3 of 6 RoHS 1800PT Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics 130 (Single side cooled) R thJ-hs (DC) = 0.042K/W 120 Maximum allowable heatsink temperature(˚C) Maximum allowable heatsink temperature(˚C) 130 110 100 90 Conduction Angle 80 70 30° 60 60° 90° 50 40 120° 180° 0 200 400 600 100 90 Conduction Period 80 70 60 50 30° 800 1000 1200 1400 60° 40 90° 120° 30 180° DC 0 400 800 1200 1600 2000 Average on-state current (A) Average on-state current (A) Fig.3 Current ratings characteristics Fig.4 Current ratings characteristics 130 (Double side cooled) R thJ-hs (DC) = 0.021 K/W 110 100 90 80 Conduction Angle 70 30° 60° 90° 60 120° 50 (Double side cooled) R thJ-hs (DC) = 0.021 K/W 120 Maximum allowable heatsink temperature(˚C) 120 Maximum allowable heatsink temperature(˚C) 110 20 130 180° 40 30 20 110 100 Conduction Period 90 80 30° 70 60° 60 90° 120° 50 180° 40 30 DC 20 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 3000 3500 Average on-state current (A) Average on-state current (A) Fig.5 On-state power loss characteristics Fig.6 On-state power loss characteristics 4000 5000 180° DC 120° 3500 Maximum average on-state power loss(W) Maximum average on-state power loss(W) (Single side cooled) R thJ-hs (DC) = 0.042 K/W 120 90° 60° 30° 3000 2500 RMS Limit 2000 1500 Conduction Angle 1000 T J = 125°C 500 0 180° 120° 4000 90° 60° 30° 3000 RMS Limit 2000 Conduction Period 1000 T J = 125°C 0 0 400 800 1200 1600 2000 2400 0 Average on-state current (A) www.nellsemi.com 500 1000 1500 2000 2500 3000 3500 Average on-state current (A) Page 4 of 6 RoHS 1800PT Series RoHS SEMICONDUCTOR Nell High Power Products Fig.8 Maximum non-repetitive surge current single and double side cooled Peak half sine wave on-state current(A) Peak half sine wave on-state current(A) Fig.7 Maximum non-repetitive surge current single and double side cooled 32000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge initial T J = 125°C @ 60Hz 0.0083 s @ 50Hz 0.0100 s 30000 28000 26000 24000 22000 20000 18000 16000 14000 1 100 10 36000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial T J = 125°C, @50Hz No Voltage Reapplied Rated V RRM Reapplied 34000 32000 30000 28000 26000 24000 22000 20000 18000 16000 14000 12000 0.01 0.1 Number of equal amplitude half cycle current pulses (N) Pulse train duration (S) Fig.10 Thermal lmpedance Z thJ-hs characteristics Transient thermal lmpedance Z thJ-hs (K/W) Fig.9 On-state voltage drop characteristcs Instantaneous on-state current (A) 10000 T J = 25°C 1000 T J = 125°C 100 0.5 1.0 1.5 2.0 2.5 1 3.0 0.1 Steady state value R thJ-hs = 0.042K/W (Single side cooled) R thJ-hs = 0.021K/W (Double side cooled) (DC operation) 0.01 0.001 0.001 Instantaneous on-state voltage (V) 0.01 0.1 1 Square wave pulse duration (s) Fig.11 Gate characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10 ohms; tr<=1µs b) Recommended load line for <=30% rated di/dt : 10V, 10 ohms tr<=1 µs (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (a) (b) Tj = -40°C VGD Tj = 25°C 1 Tj = 125°C Instantaneous gate voltage (V) 100 (1) IGD 0.1 0.001 0.01 (2) (3) Frequency Limited by PG(AV) 0.1 1 Instantaneous gate current (A) www.nellsemi.com 10 Page 5 of 6 10 100 100 RoHS 1800PT Series RoHS SEMICONDUCTOR Nell High Power Products ORDERING INFORMATION TABLE Device code 1800 PT 16 D 0 1 2 3 4 5 1 - Maximum average on-state current IT(AV), 1800 for 1800A 2 - PT = Phase Control Thyristors 3 - Voltage code, cold × 100 = VRRM/VRRM 4 - D = PUK case TO-200AB (K-PUK), Nell’s D-type Capsule 5 - Terminal type, “0” for eyelet TO-200AC (K-PUK ) ( Nell’s D-type Capsule) Creepage distance: 28.88(1.137) minimum Strike distance: 18.0(0.708) minimum 6.2(0.24) Min. Ø74.0(2.91) MAX. 4.7 (0.18) 20°±5° 43.2 (1.70) Ø3.5 (0.14) x 2.5 (0.1) deep, both ends 0.7(0.03) MIN. Ø47.0±0.1(1.85) 2 places Pin receptacle AMP. 60598-1 27.6(1.09) MAX. 0.7(0.03) MIN. Ø66(2.60) MAX. K G All dimensions in millimeters (inches) www.nellsemi.com Page 6 of 6 A