, (inc.. - Conductor TELEPHONE: (201) 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER , SILICON PLANAR EPITAXIAL TRANSISTORS , TO-72 METAL CASE , VERY LOW NOISE APPLICATIONS : t TELECOMMUNICATIONS , WIDE BAND UHF AMPLIFIER , RADIO COMMUNICATIONS TO-72 INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BFXS9 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fr, low reverse capacitance, excellent cross modulation properties and very low noise performance. The BFY90 is complementary to the BFR99A. Typical applications include telecommunication and radio communication equipment. ABSOLUTE MAXIMUM RATINGS JSymboiJ -j^Boi _V«R_ ^£EO__ Parameter Collector-base Voltage (I6 = 0) Collector-emitter Voltage (RBE £ 50 Q) Collector-emitter Voltage (Is - 0) Emitter-base Voltage (Ic = 0) — _|c___ Collector Current ^B0__ —i«__ —!il__ -Ins/H Collector Peak Current (f a 1 MHz) Total Power Dissipation at T,mb z 25 °C Storage and Junction Temperature Quality Semi-Conductors Value Unit 30 V 30 V 15 V 2.5 V 25 mA 50 mA 200 mW - 65 to 200 °C BFX89-BFY90 THERMAL DATA R(h j-case Rth i-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 580 880 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25 <C unless otherwise specified) Symbol ICBO VCEK' nF£ Max. Unit VCB - 1 5 V 10 nA Collector-emitter Knee Voltage Ic - 20 mA 0.75 V DC Current Gain lc -2 mA Parameter Collector Cutoff Current (le-0) Test Conditions lc =25 mA fr Transition Frequency VCE - 5 V lc - 2 m A VCE -1 V for BFX89 for BFY90 VCE -1 V Mln. Typ. 20 25 20 150 150 125 f - 500 MHz for BFX89 for BFY90 1 1 1.1 GHz GHz for BFX89 for BFY90 1.3 1.2 1.4 GHz GHz lc - 25 mA C CBO(1) C r .< 2 > NF(2) G p .< 2 > Collector-base Capacitance Reverse Capacitance Noise Figure Power Gain (not neutralized) IE=0 f - 1 MHz VCB - 1 0 V for BFX89 for BFY90 lc-2mA f - 1 MHz VCE - 5 V for BFX89 for BFY90 lc - 2 mA VCE - 5 V R g - Optimized f - 100 kHz for BFY90 Only f - 200 MHz R, . Optimized for BFX89 for BFY90 f = 500 MHz Rg=50fl forBFX89 for BFY90 f > 800 MHz R g = Optimized for BFX89 for BFY90 for BFX89 lc-8mA for BFY90 l c -14mA Po Output Power • IB, value lor witch !c> 22mA at VCE - 1 V 1 ) Shield lead not grounded 2) Shield toad grounded 0.6 0.6 loi BFX89 lc=8mA dim--30dB 131 Channel 9 (4) Channel 62 for BFY90 c = 14mA dim = - 3 0 d B < 3 > Channel 9 |4) Channel 62 3.3 2.5 1.7 1.5 PF PF 0.8 PF PF 4 dB 4 3.5 dB dB 6.5 5 dB dB 7 5.5 dB dB Vce-10V f - 200 MHz f = 800 MHz 19 22 7 dB dB VCE -10V f - 200 MHz f . 800 MHz 21 23 8 dB dB VCE - 1 0 V 6 6 mW mW 12 12 mW mW VCE - 1 0 V 10 (3) Ip . 202 MHz, f, = 205 MHz, f(Jw, - 208 MHz W t- - ™ "Hz- '• - 0°2 MHz' '"«> - 806 MHz