COMSET BFX89_12

BFX89 – BFY90
WIDE BAND VHF/UHF AMPLIFIER
DESCRIPTION :
•
•
•
SILICON PLANAR EPITAXIAL
TRANSISTORS
TO-72 METAL CASE
VERY LOW NOISE
APPLICATIONS :
•
•
•
TELECOMMUNICATIONS
WIDE BAND UHF AMPLIFIER
RADIO COMMUNICATIONS
The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using
interdigitated base emitter geometry. They are particulary designed for use in wide band
common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low reverse
capacitance, excellent cross modulation properties and very low noise performance. The
BFY90 is complementary to the BFR99A. Typical applications include telecommunication
and radio communication equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage ( IB = 0)
15
V
VCER
Collector-Emitter Voltage ( RBE ≤50Ω )
30
V
VCBO
Collector-Base Voltage ( IE= 0)
30
V
VEBO
Collector-Base Voltage ( IC = 0)
2.5
V
IC
Collector Current
25
mA
ICM
Collector Peak Current
50
mA
Ptot
Total Power Dissipation at Tamb ≤ 25 °C
200
mW
Tstg, Tj
Storage and Junction Temperature
-65 to 200
°C
25/10/2012
COMSET SEMICONDUCTORS
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BFX89 – BFY90
THERMAL CHARACTERISTICS
Symbol
RthJ-C
RthJ-
Ratings
Thermal Resistance, Junction – Case
Thermal Resistance, Junction – ambient
Value
Unit
580
880
°C/W
°C/W
Max
Max
ELECTRICAL CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Symbol
ICBO
VCEK*
Ratings
Test Condition(s)
Collector Cutoff Current
(IE=0)
Collector-emitter Knee
Voltage
Min
Typ
Max
Unit
VCB = 15V
-
-
10
nA
IC = 20mA
-
-
0.75
V
VCE = 5V
f = 500MHZ
IC =2 mA
BFX89
-
1
-
BFY90
1
1.1
-
VCE = 5V
f = 500MHZ
IC =25 mA
BFX89
-
1.2
-
BFY90
1.3
1.4
-
IC= 2mA
VCE= 1 V
BFX89
20
-
150
BFY90
25
-
150
IC= 25mA
VCE= 1 V
BFX89
20
-
125
BFY90
25
-
125
IE =0
VCB = 10V
f= 1MHZ
VCE= 5
BFX89
-
-
1.7
CCBO(1)
Collector-base
Capacitance
BFY90
-
-
1.5
-
0.6
-
Reverse Capacitance
IC= 2mAV
f = 1MHZ
BFX89
Cre(2)
BFY90
-
0.6
0.8
Transition Frequency
fT
hFE
GHz
-
DC Current Gain
25/10/2012
pF
pF
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BFX89 – BFY90
ELECTRICAL CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
IC= 2mA , VCE= 5 V
f = 100KHz
Rg = Optimized
NF(2)
Gpe (2)
Po
Noise Figure
Power Gain ( not
neutralized)
Output Power
Min
Typ
Mx
BFY90
Only
-
-
4
IC= 2mA , VCE= 5 V
f= 200 MHz
Rg = Optimized
BFX89
-
3.3
4
BFY90
-
2.5
3.5
IC= 2mA , VCE= 5 V
f = 500 MHz
Rg = 50 Ω
BFX89
-
-
6.5
BFY90
-
-
5
IC= 2mA , VCE= 5 V
f = 800 MHz
Rg = Optimized
BFX89
-
7
-
BFY90
-
5.5
-
For BFX89
IC= 8mA
VCE= 10 V
For BFY90
IC= 14mA
VCE= 10 V
f=200 MHz
19
22
-
f=800 MHz
-
7
-
f=200 MHz
21
23
-
f=800 MHz
-
8
-
For BFX89
IC=8mA
VCE= 10 V
Dim = -30 dB
(3)
Channel 9
-
6
-
-
6
For BFY90
IC=14mA
VCE= 10 V
Dim = -30 dB
(4)
Channel 62
(3)
Channel 9
(4)
Channel 62
Unit
dB
dB
mW
10
12
-
-
12
-
* IB = value for which IC =22 mA at VCE = 1V
(1) Shield lead not grounded
(3) fp = 202MHZ, fq = 205 MHZ, f(2q-p) = 208MHZ
(2) Shield lead grounded
(4) fp = 798MHZ, fq = 802 MHZ, f(2q-p) = 806MHZ
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BFX89 – BFY90
MECHANICAL DATA CASE TO-72
DIMENSIONS
mm
min
5.31
4.45
4.32
12.7
0.41
A
B
C
D
E
F
G
H
J
K
max
5.84
4.95
0.76
5.33
0.48
2.54
1.27
0.91
0.71
Pin 1 :
Pin 2 :
Pin 3 :
Pin 4 :
1.17
1.22
Emitter
Base
Collector
Case
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to
change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically
disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not
authorized for use as critical components in life support devices or systems.
www.comsetsemi.com
25/10/2012
[email protected]
COMSET SEMICONDUCTORS
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