Power MOSFET, 20V, 64mOhm, 3.5A, Single N

MCH3479
Power MOSFET
20V, 64mΩ, 3.5A, Single N-Channel
Features
www.onsemi.com
VDSS
• Low On-Resistance
• 1.8V Drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS Compliance
20V
95mΩ@ 2.5V
3.5A
Electrical Connection
N-Channel
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Unit
Value
Drain to Source Voltage
VDSS
20
V
Gate to Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
3.5
A
IDP
14
A
PD
0.9
W
150
°C
−55 to +150
°C
PW≤10μs, duty cycle≤1%
ID Max
149mΩ@ 1.8V
Specifications
Drain Current (Pulse)
RDS(on) Max
64mΩ@ 4.5V
3
1
1 : Gate
2 : Source
3 : Drain
Power Dissipation
When mounted on ceramic substrate
2
(900mm2 × 0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Packing Type : TL
Marking
Thermal Resistance Ratings
Value
Unit
FL
LOT No.
Symbol
LOT No.
Parameter
Junction to Ambient
When mounted on ceramic substrate
2
RθJA
138.8
°C/W
TL
(900mm × 0.8mm)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 1
1
Publication Order Number :
MCH3479/D
MCH3479
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
μA
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
1.3
V
Forward Transconductance
gFS
VDS=10V, ID=1.5A
2.8
RDS(on)1
ID=1.5A, VGS=4.5V
49
64
mΩ
RDS(on)2
ID=1A, VGS=2.5V
68
95
mΩ
RDS(on)3
ID=0.5A, VGS=1.8V
99
149
mΩ
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
20
V
0.4
S
260
pF
65
pF
Crss
50
pF
Turn-ON Delay Time
td(on)
6.2
ns
Rise Time
tr
19
ns
Turn-OFF Delay Time
td(off)
30
ns
Fall Time
tf
28
ns
Total Gate Charge
Qg
2.8
nC
Gate to Source Charge
Qgs
0.6
nC
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit
VDS=10V, VGS=4.5V, ID=3.5A
0.9
IS=3.5A, VGS=0V
0.85
nC
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
4.5V
0V
VDD=10V
VIN
ID=1.5A
RL=6.7Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
MCH3479
50Ω
S
www.onsemi.com
2
MCH3479
www.onsemi.com
3
MCH3479
www.onsemi.com
4
MCH3479
Package Dimensions
MCH3479-TL-H / MCH3479-TL-W
MCPH3
CASE 419AQ
ISSUE O
unit : mm
1 : Gate
2 : Source
3 : Drain
Recommended
Soldering Footprint
2.1
0.6
0.4
0.65 0.65
ORDERING INFORMATION
Device
MCH3479-TL-H
MCH3479-TL-W
Package
Shipping
Note
MCPH3
SC-70FL, SOT-323
3,000 pcs. / Tape & Reel
Pb-Free
and Halogen Free
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel
Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the MCH3479 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
www.onsemi.com
5