Ordering number : EN4901B 3SK264 N-Channnel Dual Gate MOSFET http://onsemi.com 15V,30mA,PG=23dB,NF=1.1dB, CP4 Features • • • • Enhancement type Easy AGC (Cut off at VG2S=0V) Small noise figure Excels in cross modulation characteristics Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS 15 V Gate1-to-Source Voltage VG1S ±8 V Gate2-to-Source Voltage VG2S ±8 V Drain Current ID 30 mA Allowable Power Dissipation PD 200 mW Channel Temperature Tch 125 °C Storage Temperature Tstg --55 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7014A-006 • Package : CP4 • JEITA, JEDEC : SC-61, SC-82AB, SOT-143, SOT-343 • Minimum Packing Quantity : 3,000 pcs./reel 3SK264-5-TG-E 2.9 0.5 0.4 4 0.1 Packing Type: TG Marking 3 2.5 1.5 LOT No. RANK LOT No. SJ 0.5 TG 1 2 0.05 1.1 0.3 0.95 0.85 0.6 1 : Drain 2 : Source 3 : Gate1 4 : Gate2 CP4 Electrical Connection 1 3 4 2 Semiconductor Components Industries, LLC, 2014 June, 2014 61014HK TA-4315/90512TKIM/82599TH(KT)/32295TS(KOTO) No.4901-1/4 3SK264 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Drain-to-Source Voltage VDS VG1S=0V, VG2S=0V, IDS=100mA Gate1-to-Source Cutoff Voltage VG1S(off) VDS=6V, VG2S=4V, ID=100mA 0 0.7 Gate2-to-Source Cutoff Voltage VG2S(off) IG1SS VDS=6V, VG1S=3V, ID=100mA VG1S=±6V, VG2S=VDS=0V 0.1 0.9 Gate1-to-Source Leakage Current Gate2-to-Source Leakage Current IG2SS VG2S=±6V, VG1S=VDS=0V Zero-Gate Voltage Drain Current IDSX VDS=6V, VG1S=1.5V, VG2S=4V VDS=6V, ID=10mA, VG2S=4V, f=1kHz Forward Transfer Admittance | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Power Gain PG VDS=6V, ID=10mA, VG2S=4V, f=200MHz Noise Figure NF VDS=6V, ID=10mA, VG2S=4V, f=200MHz 15 V *5 1.3 1.6 V nA ±50 nA *12 mA 17 0.015 20 mS pF 0.03 23 1.1 V ±50 2.5 VDS=6V, VG1S=0V, VG2S=4V, f=1MHz Unit pF dB 2.2 dB * : The 3SK264 is classified by IDSX as follows : (unit : mA) Rank IDSX 5 5.0 to 12.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PG, NF Specified Test Circuit f=200MHz ~20pF IN 50Ω 1000pF 23T 4 47pF VG1S 1000pF 15kΩ 21T 2 ~20pF 12Ω ~20pF OUT 50Ω 11T 2 1000pF VDS VG2S L : 1mmØ enamel wire 10mmØ Ordering Information Device 3SK264-5-TG-E Package Shipping memo CP4 3,000pcs./reel Pb-Free No.4901-2/4 3SK264 ID -- VDS 2.2 V 2.4V 20 VG2S=4.0V V 2.0 1.2V 1.0V 2 .0V 15 V 3.0 V .5 2.0V S =6 8 4.0V 4.5V 5.0V 5.5V 10 V G2 1.4V 1.5V 5 0.8V 1.0V 0.6V 2 4 6 8 VDS=6V 2.0V V 2.5 3 4 5.0V =6.0V VG2S 4.5V 4.0 15 V V 3.5 V 3.0 10 2.5 V 2.0 5 10 15 20 DrainCurrent,ID -- mA VDS=6V VG1S : VG2S=4V ID=10mA f=200MHz 20 3 NF 0 1 1 2 3 4 5 Gate2-to-Source Voltage, VG2S -- V 0 6 ITR02888 1.0 1.5 2.0 Ciss -- VG2S 2.5 ITR02885 VDS=6V VG1S : VG2S=4V ID=10mA f=1MHz 5 3 2 --1 0 1 2 3 PD -- Ta 240 PG 2 0 0.5 Gate2-to-Source Voltage, VG2S -- V 4 10 --10 0 ITR02886 PG, NF -- VG2S 30 1.0V 1.0 25 NoiseFigure,NF --dB 0 V 1.0V V 1.5 5 V 7 5.5V 20 1.5 5 Gate1-to-Source Voltage, VG1S -- V Input Capacitance, Ciss -- pF VDS=6V f=1kHz 0V 10 0 5 4. VG ITR02884 | yfs | -- ID 25 15 V 2 V .0 =6 2S V 1 5.5V 5.0V 4.5V 20 0V 0.5V 0.75V Gate2-to-Source Voltage, VG2S -- V 2.5 ITR02883 2. 1.0V VDS=6V f=1kHz 2.5 1.25V 0 2.0 3.0 1.5V 5 1.5 5V 3. V G1 S= 1.75V 10 1.0 | yfs | -- VG1S 25 5V 20 0 0.5 Gate1-to-Source Voltage, VG1S -- V 2.2 15 0.5V 0 ITR02882 ID -- VG2S 25 0 10 Forward Transfer Admittance, | yfs | -- mS 0 Drain-to-SourceVoltage, VDS -- V DrainCurrent,ID -- mA DrainCurrent,ID -- mA 12 AllowablePowerDissipation,PD -- mW DrainCurrent,ID -- mA 1.6V 0 Forward Transfer Admittance, | yfs | -- mS 3.5V 20 4 PowerGain,PG --dB VDS=6V 1.8V 16 0 ID -- VG1S 25 4 ITR02887 200 160 120 80 40 0 0 20 40 60 80 100 AmbientTemperature, Ta -- °C 120 140 ITR02889 No.4901-3/4 3SK264 Outline Drawing 3SK264-5-TG-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 0.8 1.2 1.0 2.4 1.9 1.8 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.4901-4/4