GENERAL PURPOSE TRANSISTORS RoHS BC818 (40) NPN SOT-23 FEATURES • NSV Prefix for automotive and other applications requiring unique site and control change • AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 Collector 1 BASE NPN Base 2 EMITTER MAXIMUM RATINGS (TA=25°C unless otherwise noted) Emitter 0.120(3.05) 0.104(2.65) 0.020(0.51) 0.015(0.37) Symbol Value Unit VCBO 30 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5.0 V IC 500 mAdc 225 1.8 mW mW / ° C 300 2.4 mW mW / ° C Collector Current - Continuous Total Device Dissipation FR-5 Board (Note 1) TA = 25° C Derate above 25° C Total Device Dissipation Alumina Substrate TA = 25° C (Note 2) Derate above 25° C FR-5 Board Thermal Resistance, Alumina Junction-to-Ambient Substrate 1 .041(1.05) .041(1.05) .047(0.89) .047(0.89) 0.120(3.05) 0.104(2.65) 0.043(1.10) 0.035(0.89) PD 0.006(0.15) 0.001(0.013) 556 ROJA TJ Junction & Storage Temperature Range TSTG 417 2 .007 (0.178) .003 (0.076) Parameter Collector - Base Voltage .055 (1.40) .047 (1.19) 3 0.024(0.61) 0.018(0.45) °C / W -55 ~ 150 SOT-23 ° C Dimensions in inches and (millimeters) Note 1: FR-5 = 1.0 x 0.75 x 0.062” Note 2: Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector Cut - Off Current Emitter - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Symbol I CBO Test Conditions VCB = 20V VCB = 20V, TA = 150° C Min Typ. Max Unit 100 nA --5.0 µA V(BR)EBO IE = 1.0µA 5.0 -- -- V V(BR)CEO IC = -10mA 25 -- -- V V(BR)CES VEB = 0, IC = 10µA 30 -- -- V hFE VCE = 1.0V, IC = 100mA VCE = 1.0V, IC = 500mA 250 40 -- 600 -- -- Collector - Emitter Saturation Voltage VCE (sat) IC = 500mA, IB = 50mA -- -- 0.7 V Base - Emitter On Voltage VBE (on) IC = 500mA, VCE = 1.0V -- -- 1.2 V 100 -- -- MHz -- 10 -- pF DC Current Gain Current Gain - Bandwidth Product Output Capacitance fT Cobo VCE = 5.0Vdc, IC = 10mA f = 100MHz VCB = 10V, f = 1.0MHz Page 1 of 2 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.21 GENERAL PURPOSE TRANSISTORS RoHS BC818 (40) NPN SOT-23 TYPICAL CHARACTERISTIC CURVES Figure 1. DC Current Gain Figure 2. Saturation Region VCE, COLLECTOR - EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 1000 VCE = 1 V TJ = 25°C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 1.0 TJ = 25°C 0.8 0.6 0.4 0V, TEMPERATURE COEFFICIENTS (mV / °C) VBE(sat) @ IC / IB = 10 VBE(on) @ VCE = 1 V 0.6 0.4 0.2 VCE(sat)@ IC / IB = 10 0 10 100 IC, COLLECTOR CURRENT (mA) 0 0.01 0.1 1 10 IB, BASE CURRENT (mA) 100 +1 VC for V CE(sat) 0 -1 VB for V BE -2 1 1000 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 5. Capacitances 100 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 500 mA Figure 4. Temperature Coefficients 0.8 1 100 mA 300 mA 0.2 Figure 3. “On” Voltages 1.0 TA = 25°C IC = 10 mA Cib 10 Cob 1 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Page 2 of 2 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.21