General Purpose Transistors NPN Silicon BC846ALT1,BLT1 BC847ALT1,BLT1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current(Peak value) Emitter Current(Peak value) Base Current(Peak value) Symbol V CEO V CBO V EBO IC I CM I EM I BM BC846 65 80 6.0 100 200 200 200 BC847 BC850 45 50 6.0 100 200 200 200 BC848 BC849 30 30 5.0 100 200 200 200 Unit V V V mAdc mAdc mAdc mAdc SOLDERING CHARACTERISTICS Characteristic Solder Heat Resistance Solderability CLT1 thru BC850BLT1,CLT1 3 1 2 CASE 318–08, STYLE 6 Symbol 265 Unit °C 240 to 265 °C SOT–23 (TO–236AB) 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR– 5 Board, (1) PD TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient RθJA Total Device Dissipation PD Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient RθJA Junction and Storage Temperature TJ , Tstg Max Unit 225 1.8 556 mW mW/°C °C/W 300 2.4 417 –55 to +150 mW mW/°C °C/W °C 1 BASE 2 EMITTER DEVICE MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 65 45 30 80 50 30 80 50 30 6.0 5.0 5.0 — — — — — — — — — — — — — — — — — — — — — — 15 5.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector–Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector–Base Breakdown Voltage BC846A,B (IC = 10 µA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Emitter–Base Breakdown Voltage BC846A,B BC847A,B,C (IE = 1.0 µA) BC848A,B,C, BC849B,C, BC850B,C Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO v v v nA µA M3–1/4 BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1 ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit h FE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 — fT 100 — — MHz Cobo NF — — 4.5 pF dB — — — — 10 4.0 ON CHARACTERISTICS DC Current Gain (I C = 10 µA, V CE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C (I C = 2.0 mA, V CE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) V CE(sat) V BE(sat) V BE(on) V V mV SMALL–SIGNAL CHARACTERISTICS 1.0 2.0 V CE = 10 V T A = 25°C 1.5 1.0 0.8 0.6 0.4 0.8 V BE(sat) @ I C /I B=10 0.7 V BE(on) @ V CE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 V CE(sat) @ I C /I B = 10 0.1 0 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 θVB , TEMPERATURE COEFFICIENT (mV/ °C) T A = 25°C 1.6 I C= 200 mA 1.2 IC= 10 mA 20 mA I C = 100 mA I C = 50 mA 0.8 0.4 0 0.02 0.1 1.0 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mAdc) 2.0 IC= 0.1 200 I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain VCE, COLLECTOR– EMITTER VOLTAGE (V) T A = 25°C 0.9 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Noise Figure (I C = 0.2 mA, BC846A, BC847A, BC848A V CE = 5.0 Vdc, R S = 2.0 kΩ,BC846B, BC847B, BC848B f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C BC849B,C, BC850B,C 10 20 Figure 2. “Saturation” and “On” Voltages 1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 3.0 0.2 1.0 10 100 I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient M3–2/4 BC846ALT1,BLT1 BC847ALT1,BLT1 CLT1 thru BC850BLT1,CLT1 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) BC847/BC848 10.0 T A = 25°C 7.0 C, CAPACITANCE(pF) 5.0 C ib 3.0 C ob 2.0 1.0 0.4 0.6 0.8 1.0 4.0 6.0 8.0 10 20 40 300 200 V CE = 10V 100 T A = 25°C 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product 1.0 hFE , DC CURRENT GAIN (NORMALIZED) T A = 25°C V CE = 5V T A = 25°C 0.8 V BE(sat) @ I C /I B = 10 V, VOLTAGE (VOLTS) 2.0 1.0 0.5 0.2 0.1 0.2 1.0 10 50mA 100mA 200mA IC = 10 mA 0.4 0.2 VCE(sat) @ I C /I B= 10 0.2 0.5 1.0 2.0 5.0 10 20 50 Figure 8. “On” Voltage 1.2 0.05 0.1 0.2 I C , COLLECTOR CURRENT (mA) 1.6 0 0.02 0.4 Figure 7. DC Current Gain T A= 25°C 0.8 VBE @ VCE = 5.0 V I C , COLLECTOR CURRENT (mA) 2.0 20mA 0.6 0 100 θVB , TEMPERATURE COEFFICIENT (mV/°C) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 2.0 400 0.5 1.0 2.0 5.0 10 20 100 200 –1.0 –1.4 –1.8 θ VB for V BE –55°C to 125°C –2.2 –2.6 –3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient M3–3/4 BC846ALT1, BLT1 BC847ALT1, BLT1 CLT1 thru BC850BLT1, CLT1 40 C, CAPACITANCE (pF) T A= 25°C 20 C ib 10 6.0 4.0 C ob 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 V R , REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 50 100 fT, CURRENT– GAIN – BANDWIDTH PRODUCT T BC846 500 V CE= 5 V T A= 25°C 200 100 50 20 1.0 5.0 10 50 100 I C , COLLECTOR CURRENT (mA) Figure 12. Current–Gain – Bandwidth Product M3–4/4