RENESAS UPD5756T6N-E2-A

Data Sheet
μPD5756T6N
SiGe BiCMOS Integrated Circuit
Wide Band LNA IC with Through Function
R09DS0026EJ0100
Rev.1.00
Oct 04, 2011
DESCRIPTION
The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV
application. This IC exhibits low noise figure and low distortion characteristics.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
• Low voltage operation
• Low current consumption
•
•
•
•
•
:
:
:
Operation frequency
:
Low noise
:
Low distortion
:
Low insertion loss
:
High-density surface mounting :
VCC = 3.1 to 3.5 V (3.3 V TYP.)
ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode)
ICC2 = 1 μA MAX. @VCC = 3.3 V (Bypass-mode)
f = 40 to 1 000 MHz
NF = 3.2 dB TYP. @f = 1 000 MHz (LNA-mode)
IIP3 = +9 dBm TYP. @f1 = 500 MHz, f2 = 505 MHz (LNA-mode)
Lins = 1.7 dB TYP. @f = 1 000 MHz (Bypass-mode)
6-pin plastic TSON (T6N) package (1.5 × 1.5 × 0.37 mm)
APPLICATIONS
• Low noise amplifier for the digital TV system, etc.
ORDERING INFORMATION
Part Number
μPD5756T6N-E2
Order Number
μPD5756T6N-E2-A
Package
6-pin plastic
TSON (T6N)
(Pb-Free)
Marking
C4C
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5756T6N
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 1 of 15
μPD5756T6N
PIN CONNECTIONS, MARKING AND INTERNAL BLOCK DIAGRAM
(Top View)
2
C4C
1
3
(Bottom View)
(Top View)
Bias
Control
6
6
1
2
5
5
2
3
4
4
3
6
1
5
4
Pin No
1
2
3
4
5
6
Pin Name
Vcont
GND
INPUT
OUTPUT
Load
VCC
Remark Exposed pad : GND
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Supply Voltage
VCC
Mode Control Voltage
Vcont
TA = +25°C
Total Power Dissipation
Ptot
TA = +85°C
Operating Ambient Temperature
TA
Storage Temperature
Tstg
Input Power
Pin
Note:
Ratings
Unit
4.0
V
TA = +25°C
4.0
V
300
mW
−40 to +85
°C
Note
−55 to +150
°C
+15
dBm
TA = +25°C,
ZS = ZL = 75 Ω
Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VCC
3.1
3.3
3.5
V
Supply Voltage
Mode Control Voltage (H)
Vcont (H)
1.0
-
VCC
V
Mode Control Voltage (L)
Vcont (L)
−0.1
-
0.4
V
Operating Frequency
f
40
-
1 000
MHz
Operating Ambient Temperature
TA
−40
+25
+85
°C
Input Power (LNA-mode)
Pin
-
-
0
dBm
Pin
-
-
+10
dBm
Note
Input Power (Bypass-mode) Note
Note: TA = +25°C, ZS = ZL = 75 Ω
ELECTRICAL CHARACTERISTICS 1 (DC Characteristics)
(TA = +25°C, VCC = 3.3 V, unless otherwise specified)
Parameter
Circuit Current 1
Circuit Current 2
Mode Control Current 1
Mode Control Current 2
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Symbol
ICC1
ICC2
Icont1
Icont2
Test Conditions
Vcont = 3.3 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
Vcont = 3.3 V, No Signal (LNA-mode)
Vcont = 0 V, No Signal (Bypass-mode)
MIN.
16
–
–
–
TYP.
25
0.01
50
0.01
MAX.
34
1
100
1
Unit
mA
μA
μA
μA
Page 2 of 15
μPD5756T6N
ELECTRICAL CHARACTERISTICS 2 (LNA-mode)
(TA = +25°C, VCC = Vcont = 3.3 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Symbol
MIN.
10.5
10.5
TYP.
13
13
MAX.
15.5
15.5
Unit
dB
dB
–
3.2
4.2
dB
–
3.2
4.2
dB
7
9
–
dB
7
7
f = 40 MHz, Pin = –20 dBm
f = 1 000 MHz, Pin = –20 dBm
7
f1 = 500 MHz, f2 = 505 MHz,
+5
Pin = –20 dBm
Input PCB and connector losses : 0.03 dB (at 40 MHz), 0.10 dB (at 1 000 MHz)
10
10
–
–
dB
dB
12
+9
–
–
dB
dBm
Power Gain 1
Power Gain 2
Noise Figure 1
GP1
GP2
NF1
Noise Figure 2
NF2
Input Return Loss 1
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
Input 3rd Order Intercept Point
Note:
RLin1
RLin2
RLout1
RLout2
IIP3
Test Conditions
f = 40 MHz, Pin = –20 dBm
f = 1 000 MHz, Pin = –20 dBm
f = 40 MHz, ZS = ZL = 50 Ω, excluded
PCB and connector losses
Note
f = 1 000 MHz, ZS = ZL = 50 Ω,
excluded PCB and connector losses
Note
f = 40 MHz, Pin = –20 dBm
f = 1 000 MHz, Pin = –20 dBm
ELECTRICAL CHARACTERISTICS 3 (Bypass-mode)
(TA = +25°C, VCC = 3.3 V, Vcont = 0 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Insertion Loss 1
Insertion Loss 2
Input Return Loss 1
Input Return Loss 2
Output Return Loss 1
Output Return Loss 2
Input 3rd Order Intercept Point
Symbol
Lins1
Lins2
RLin1
RLin2
RLout1
RLout2
IIP3
Test Conditions
f = 40 MHz, Pin = –10 dBm, excluded
PCB and connector losses
Note
f = 1 000 MHz, Pin = –10 dBm,
excluded PCB and connector losses
Note
f = 40 MHz, Pin = –10 dBm
f = 1 000 MHz, Pin = –10 dBm
MIN.
–
TYP.
0.5
MAX.
1.5
Unit
dB
–
1.7
2.5
dB
10
26
–
dB
7
10
8
25
–
–
dB
dB
8
–
dB
+29
–
dBm
f = 40 MHz, Pin = –10 dBm
f = 1 000 MHz, Pin = –10 dBm
7
f1 = 500 MHz, f2 = 505 MHz,
+20
Pin = –5 dBm
Note: Input-output PCB and connector losses : 0.06 dB (at 40 MHz), 0.20 dB (at 1 000 MHz)
STANDARD CHARACTERISTICS FOR REFERENCE 1 (LNA-mode)
(TA = +25°C, VCC = Vcont = 3.3 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Isolation 1
Isolation 2
Gain 1 dB Compression Output
Power
Symbol
ISL1
ISL2
PO (1 dB)
Test Conditions
f = 40 MHz, Pin = –20 dBm
f = 1 000 MHz, Pin = –20 dBm
f = 500 MHz
Reference Value
20
Unit
dB
20
+10
dB
dBm
STANDARD CHARACTERISTICS FOR REFERENCE 2 (Bypass-mode)
(TA = +25°C, VCC = 3.3 V, Vcont = 0 V, ZS = ZL = 75 Ω, unless otherwise specified)
Parameter
Symbol
Test Conditions
Reference Value
PO (1 dB) f = 500 MHz
Note
Gain 1 dB Compression Output
Power
Note: The input-output power characteristic is not saturated up to +15 dBm of input power.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Unit
dBm
Page 3 of 15
μPD5756T6N
TEST CIRCUIT
Vcont
1
6
10 000 pF
INPUT
10 000 pF
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
VCC
270 nH
2
5
3
4
0.1μF
OUTPUT
10 000 pF
Page 4 of 15
μPD5756T6N
TYPICAL CHARACTERISTICS 1 (DC Characteristics)
(TA = +25°C, unless otherwise specified)
CIRCUIT CURRENT vs. OPERATING
AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
40
Circuit Current ICC (mA)
Circuit Current ICC (mA)
VCC = 3.5 V
30
TA = +85°C
20
+25°C
–40°C
10
3.3 V
30
20
3.1 V
10
VCC = Vcont
RF = off
VCC = Vcont
RF = off
0
0
1
2
3
0
–50
4
75
50
Operating Ambient Temperature TA (°C)
CIRCUIT CURRENT vs.
MODE CONTROL VOLTAGE
MODE CONTROL CURRENT vs.
MODE CONTROL VOLTAGE
100
100
TA = +85°C
+25°C
30
20
–40°C
10
1.0
2.0
VCC = 3.3 V
RF = off
3.0
4.0
Mode Control Voltage Vcont (V)
Mode Control Current Icont (μA)
Circuit Current ICC (mA)
25
0
Supply Voltage VCC (V)
40
0
0
–25
VCC = 3.3 V
RF = off
80
60
TA = +85°C
40
+25°C
20
–40°C
0
0
1.0
2.0
3.0
4.0
Mode Control Voltage Vcont (V)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 5 of 15
μPD5756T6N
TYPICAL CHARACTERISTICS 2 (LNA-mode)
(TA = +25°C, ZS = ZL = 75 Ω, unless otherwise specified)
NOISE FIGURE vs. OPERATING
AMBIENT TEMPERATURE
NOISE FIGURE vs. SUPPLY VOLTAGE
5
f = 500 MHz
4
40 MHz
3
1 000 MHz
2
Noise Figure NF (dB)
Noise Figure NF (dB)
5
1
f = 500 MHz
4
40 MHz
3
1 000 MHz
2
1
VCC = Vcont
ZS = ZL = 50 Ω
0
2.8
3.0
3.2
3.4
3.6
VCC = Vcont = 3.3 V
ZS = ZL = 50 Ω
0
–50
3.8
0
25
75
100
NOISE FIGURE vs. FREQUENCY
NOISE FIGURE vs. FREQUENCY
5
5
TA = +85°C
VCC = Vcont
ZS = ZL = 50 Ω
VCC = 3.5 V
VCC = Vcont = 3.3 V
ZS = ZL = 50 Ω
4
Noise Figure NF (dB)
4
3
3.3 V
3.1 V
2
1
0
0
200
400
600
800
1 000
3
+25°C
2
–40°C
1
0
0
1 200
200
400
600
800
1 000
Frequency f (MHz)
Frequency f (MHz)
POWER GAIN vs. SUPPLY VOLTAGE
POWER GAIN vs. OPERATING
AMBIENT TEMPERATURE
VCC = Vcont
VCC = Vcont = 3.3 V
16
f = 500 MHz
14
1 000 MHz
12
40 MHz
10
3.0
3.2
3.4
Power Gain GP (dB)
16
8
2.8
1 200
18
18
Power Gain GP (dB)
50
Operating Ambient Temperature TA (°C)
Supply Voltage VCC (V)
Noise Figure NF (dB)
–25
f = 1 000 MHz
500 MHz
14
12
40 MHz
10
3.6
3.8
Supply Voltage VCC (V)
8
–50
–25
0
25
50
75
100
Operating Ambient Temperature TA (°C)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 6 of 15
μPD5756T6N
POWER GAIN vs. FREQUENCY
POWER GAIN vs. FREQUENCY
18
18
VCC = Vcont
16
VCC = 3.5 V
Power Gain GP (dB)
Power Gain GP (dB)
16
VCC = Vcont = 3.3 V
14
12
3.3 V
3.1 V
10
8
0
TA = –40°C
+25°C
14
12
+85°C
10
500
1 000
8
0
1 500
500
Frequency f (MHz)
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
0
VCC = Vcont = 3.3 V
–5
Input Return Loss RLin (dB)
Input Return Loss RLin (dB)
1 500
Frequency f (MHz)
VCC = Vcont
VCC = 3.1 V
–10
–15
3.5 V
3.3 V
–20
–25
–30
0
500
1 000
–5
TA = +85°C
–10
+25°C
–15
–40°C
–20
–25
–30
0
1 500
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
0
0
VCC = Vcont = 3.3 V
Output Return Loss RLout (dB)
VCC = Vcont
Output Return Loss RLout (dB)
1 000
–5
VCC = 3.1 V
–10
–15
3.3 V
–20
3.5 V
–25
–5
TA = +85°C
–10
–15
–20
–40°C
–25
+25°C
–30
0
500
1 000
1 500
Frequency f (MHz)
–30
0
500
1 000
1 500
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 7 of 15
μPD5756T6N
ISOLATION vs. FREQUENCY
ISOLATION vs. FREQUENCY
0
0
VCC = Vcont = 3.3 V
VCC = Vcont
–5
Isolation ISL (dB)
Isolation ISL (dB)
–5
–10
VCC = 3.1 V
–15
3.3 V
–20
–25
–10
–15
TA = –40°C
+25°C
–20
–25
3.5 V
–30
0
500
1 000
+85°C
–30
0
1 500
500
1 000
Frequency f (MHz)
Frequency f (MHz)
K FACTOR vs. FREQUENCY
K FACTOR vs. FREQUENCY
3
3
VCC = Vcont = 3.3 V
VCC = Vcont
VCC = 3.3 V
TA = +85°C
2
K factor K
K factor K
2
3.5 V
1
500
1 000
+25°C
1
3.1 V
0
0
–40°C
0
0
1 500
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
OUTPUT POWER vs. INPUT POWER
POWER GAIN vs. INPUT POWER
20
20
10
15
Power Gain GP (dB)
Output Power Pout (dBm)
1 500
0
–10
–20
–20
–10
VCC = Vcont = 3.3 V
f = 500 MHz
0
10
Input Power Pin (dBm)
10
5
0
–20
–10
VCC = Vcont = 3.3 V
f = 500 MHz
0
10
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 8 of 15
20
VCC = Vcont
f = 500 MHz
15
10
5
0
2.8
3.0
3.2
3.4
3.6
3.8
Supply Voltage VCC (V)
Gain 1 dB Compression Output Power PO (1 dB) (dBm)
GAIN 1 dB COMPRESSION OUTPUT
POWER vs. SUPPLY VOLTAGE
40
VCC = Vcont = 3.3 V
20 f1 = 500 MHz
f2 = 505 MHz
0
Pout
–20
–40
IM3
–60
–80
–100
–30 –25 –20 –15 –10 –5
0
5
10
15 20
Input Power Pin (dBm)
GAIN 1 dB COMPRESSION OUTPUT POWER
vs. OPERATING AMBIENT TEMPERATURE
20
VCC = Vcont = 3.3 V
f = 500 MHz
15
10
5
0
–50
–25
25
0
50
75
100
Operating Ambient Temperature TA (°C)
INPUT 3RD ORDER INTERCEPT POINT
vs. SUPPLY VOLTAGE
OUTPUT POWER, IM3 vs. INPUT POWER
Input 3rd Order Intercept Point IIP3 (dBm)
Output Power Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
Gain 1 dB Compression Output Power PO (1 dB) (dBm)
μPD5756T6N
20
VCC = Vcont
f1 = 500 MHz
f2 = 505 MHz
15
10
5
0
2.8
3.0
3.2
3.4
3.6
3.8
Supply Voltage VCC (V)
Input 3rd Order Intercept Point IIP3 (dBm)
INPUT 3RD ORDER INTERCEPT POINT
vs. OPERATING AMBIENT TEMPERATURE
20
VCC = Vcont = 3.3 V
f1 = 500 MHz
f2 = 505 MHz
15
10
5
0
–50
–25
0
25
50
75
100
Operating Ambient Temperature TA (°C)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 9 of 15
μPD5756T6N
S-PARAMETERS 1 (LNA-mode)
(TA = +25°C, VCC = Vcont = 3.3 V, ZS = ZL = 75 Ω, monitored at connector on board)
S11-FREQUENCY
1:
40 MHz 57.89 Ω –48.84 Ω
2 : 500 MHz 48.64 Ω –14.27 Ω
3 : 1 000 MHz 38.40 Ω 12.24 Ω
3
2
1
START : 10 MHz
STOP : 2 000 MHz
S22-FREQUENCY
1:
40 MHz 38.73 Ω –12.11 Ω
2 : 500 MHz 53.95 Ω –13.04 Ω
3 : 1 000 MHz 46.63 Ω
4.15 Ω
3
1
START : 10 MHz
2
STOP : 2 000 MHz
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 10 of 15
μPD5756T6N
TYPICAL CHARACTERISTICS 3 (Bypass-mode)
(TA = +25°C, ZS = ZL = 75 Ω, unless otherwise specified)
INSERTION LOSS vs. FREQUENCY
INSERTION LOSS vs. FREQUENCY
0
0
VCC = 3.3 V, Vcont = 0 V
–1
Insertion Loss Lins (dB)
Insertion Loss Lins (dB)
Vcont = 0 V
–2
VCC = 3.5 V, 3.3 V, 3.1 V
–3
–4
–5
0
500
1 000
–2
+85°C
–3
–4
–5
1 500
TA = –40°C, +25°C
–1
0
500
1 000
Frequency f (MHz)
Frequency f (MHz)
INPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
0
0
VCC = 3.3 V, Vcont = 0 V
–5
Input Return Loss RLin (dB)
Input Return Loss RLin (dB)
Vcont = 0 V
–10
VCC = 3.5 V, 3.3 V, 3.1 V
–15
–20
–25
–30
0
500
1 000
–5
TA = +85°C
–10
–15
+25°C
–20
–40°C
–25
–30
0
1 500
500
1 000
1 500
Frequency f (MHz)
Frequency f (MHz)
OUTPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
0
0
Vcont = 0 V
Output Return Loss RLout (dB)
Output Return Loss RLout (dB)
1 500
–5
VCC = 3.5 V, 3.3 V, 3.1 V
–10
–15
–20
–25
–30
0
500
1 000
1 500
Frequency f (MHz)
VCC = 3.3 V, Vcont = 0 V
–5
–10
TA = +85°C
–15
+25°C
–20
–40°C
–25
–30
0
500
1 000
1 500
Frequency f (MHz)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 11 of 15
OUTPUT POWER vs. INPUT POWER
Output Power Pout (dBm)
20
10
0
–10
–20
–10
VCC = 3.3 V, Vcont = 0 V
f = 500 MHz
10
20
0
Output Power Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
μPD5756T6N
OUTPUT POWER, IM3 vs. INPUT POWER
40
20
0
–20
–40
–60
–100
–20
30
20
Vcont = 0 V
f1 = 500 MHz
f2 = 505 MHz
3.4
–10
0
10
20
30
40
INPUT 3RD ORDER INTERCEPT POINT
vs. OPERATING AMBIENT TEMPERATURE
3.6
3.8
Supply Voltage VCC (V)
Input 3rd Order Intercept Point IIP3 (dBm)
Input 3rd Order Intercept Point IIP3 (dBm)
40
3.2
VCC = 3.3 V, Vcont = 0 V
f1 = 500 MHz
f2 = 505 MHz
Input Power Pin (dBm)
INPUT 3RD ORDER INTERCEPT POINT
vs. SUPPLY VOLTAGE
3.0
IM3
–80
Input Power Pin (dBm)
10
2.8
Pout
40
30
20
VCC = 3.3 V, Vcont = 0 V
f1 = 500 MHz
f2 = 505 MHz
10
–50
0
100
50
Operating Ambient Temperature TA (°C)
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 12 of 15
μPD5756T6N
S-PARAMETERS 2 (Bypass-mode)
(TA = +25°C, VCC = 3.3 V, Vcont = 0 V, ZS = ZL = 75 Ω, monitored at connector on board)
S11-FREQUENCY
1:
40 MHz
2 : 500 MHz
3 : 1 000 MHz
78.51 Ω
48.91 Ω
34.97 Ω
–6.19 Ω
–10.37 Ω
16.79 Ω
78.30 Ω
49.41 Ω
37.36 Ω
–6.19 Ω
–8.53 Ω
20.18 Ω
3
2
1
START : 10 MHz
STOP : 2 000 MHz
S22-FREQUENCY
1:
40 MHz
2 : 500 MHz
3 : 1 000 MHz
3
2
START : 10 MHz
1
STOP : 2 000 MHz
Remark The graphs indicate nominal characteristics.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 13 of 15
μPD5756T6N
PACKAGE DIMENSIONS
6-PIN PLASTIC TSON (T6N) (UNIT: mm)
(Top View)
(Bottom View)
(Side View)
0.3±0.07
1.5±0.1
0.37+0.03
–0.05
1.2±0.1
A
0.08 MIN.
0.2+0.07
–0.05
A
1.5±0.1
0.5±0.06
(0.24)
0.2±0.1
0.7±0.1
Remark A>0
( ) : Reference value
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 14 of 15
μPD5756T6N
NOTES ON CORRECT USE
(1)
(2)
(3)
(4)
(5)
Observe precautions for handling because of electro-static sensitive devices.
Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals should be connected to the ground plane as close as possible.
The bypass capacitor should be attached to VCC line.
Do not supply DC voltage to INPUT pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
Condition Symbol
IR260
HS350
CAUTION
Do not use different soldering methods together.
R09DS0026EJ0100 Rev.1.00
Oct 04, 2011
Page 15 of 15
μPD5756T6N Data Sheet
Revision History
Rev.
1.00
Date
Oct 04, 2011
Description
Summary
Page
-
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C-1
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
7.
Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
Colophon 1.1