CMPA601C025F 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F GaN HEMT MMIC amplifier offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10 lead ceramic package. This delivers a high power 6 to 12GHz, high efficiency amplifier in a small footprint package at 50 ohms. PN: CMPA601C 025F Package Type : 440213 Typical Performance Over 6.0-12.0 GHz (TC = 25˚C) Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units Small Signal Gain 35 34 34 37 31 dB POUT @ PIN = 22 dBm 42 45 43 41 34 W Power Gain @ PIN = 22 dBm 22 23.5 23.5 23 22 dB PAE @ PIN = 22 dBm 27 39 31 33 25 % Note: All data CW. 15 Rev 2.0 – May 20 Features Applications • 33 dB Small Signal Gain • Jamming Amplifiers • 35 W Typical PSAT • Test Equipment Amplifiers • Operation up to 28 V • Broadband Amplifiers • High Breakdown Voltage • High Temperature Operation • Size 0.172 x 0.239 x 0.004 inches Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Symbol Rating Units Conditions Drain-source Voltage VDS 84 VDC 25˚C Gate-source Voltage VGS -10, +2 VDC 25˚C Storage Temperature TSTG -40, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 23 mA Soldering Temperature TSTG 245 ˚C T 40 in-oz RθJC 0.85 ˚C/W TC -40, +150 ˚C 1 Screw Torque Thermal Resistance, Junction to Case2 Case Operating Temperature 2 25˚C 85˚C @ PDISS = 116 W Note1 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library Note2 See also, the Power Dissipation De-rating Curve on page 4 Electrical Characteristics (Frequency = 6.0 GHz to 12.0 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold VTH -3.8 -2.8 -2.3 V VDS = 10 V, ID = 23 mA Saturated Drain Current IDS 10.6 13.0 – A VDS = 6V, VGS = 2 V Drain-Source Breakdown Voltage VBD 84 100 – V VGS = -8 V, IDS = 23 mA Small Signal Gain S21 – 33 – dB VDD = 28 V, IDQ = 2 A, PIN = -30 dBm Output Power3,4 POUT1 – 46.2 – dBm VDD = 28 V, IDQ = 2 A, PIN = 22 dBm, Freq = 6 GHz Output Power3,4 POUT2 – 46.3 – dBm VDD = 28 V, IDQ = 2 A, PIN = 22 dBm, Freq = 9.5 GHz Output Power3,4 POUT3 – 45.3 – dBm VDD = 28 V, IDQ = 2 A, PIN = 22 dBm, Freq = 12 GHz Power Added Efficiency3,4 PAE1 – 27 – % VDD = 28 V, IDQ = 2 A, PIN = 22 dBm, Freq = 6 GHz Power Added Efficiency3,4 PAE2 – 31 – % VDD = 28 V, IDQ = 2 A, PIN = 22 dBm, Freq = 9.5 GHz Power Added Efficiency3,4 PAE3 – 24.5 – % VDD = 28 V, IDQ = 2 A, PIN = 22 dBm, Freq = 12 GHz Input Return Loss S11 – -5 -2.4 dB VDD = 28 V, IDQ = 2 A, PIN = -30 dBm Output Return Loss S22 – -5 -2.1 dB VDD = 28 V, IDQ = 2 A, PIN = -30 dBm VSWR – 5:1 VSWR Y No damage at all phase angles, VDD = 28 V, IDQ = 2 A, PIN = 22 dBm DC Characteristics1,2 RF Characteristics3 Output Mismatch Stress Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CMPA601C025F-AMP with 12.4 GHz low pass filter. 4 Fixture loss de-embedded using the following offsets. The offset is subtracted from the input offset value and added to the output offset value. a) 6.0 GHz - 0.13 dB b) 9.50 GHz - 0.26 dB c) 12.0 GHz - 0.35 dB Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA601C025F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF CMPA601C025F Typical Performance Figure 1. - Small Signal S-Parameters vs. Frequency VDD = 28 V, IDQ S-PARAMETER = 2.0 A, PIN = -30 dBm VDD=28V, IDQ=2.0A 50 40 30 Gain (dB) 20 10 0 -10 S11 -20 S21 S22 -30 5 6 7 8 9 10 11 Frequency (GHz) 12 13 14 15 Figure 2. - Output Power, Gain and Power, PowerPAE Added Output and Efficiency Power Gain vs. Input Power Pin =22 dBm, VDD=28V, dBm VDD = 28 V, IDQ = 2.0 A, PIN = 22 IDQ=2.0A 60 55 Output Power (dBm), PAE(%) & Power Gain (dB) 50 45 40 35 30 25 20 15 POUT 10 PAE PG 5 0 6 7 8 9 Frequency (GHz) 10 11 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA601C025F Rev 2.0 12 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF CMPA601C025F Typical Performance Figure 3. - Power Added Efficiency vs. Input Power VDD =Added 28 V, Efficiency IDQ = 2.0 Avs. Input power Power 40 35 PAE (%) 30 25 20 15 6.0 GHz 9.5 GHz 12.0 GHz 10 8 10 12 14 16 18 Input Power (dBm) 20 22 24 26 Figure 4. - Output Power vs. Input Power VDD = 28 V, IDQ = 2.0 A Output power vs. Input power 50 48 Output Power (dBm) 46 44 42 40 6.0 GHz 9.5 GHz 12.0 GHz 38 36 8 10 12 14 16 18 Input Power (dBm) 20 22 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA601C025F Rev 2.0 24 26 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF CMPA601C025F Typical Performance Figure 5. - Gain vs Input Power VDD = 28 V, vs. IDQ Input = 2.0 power A Gain 35 30 Power Gain (dB) 25 20 15 10 6.0 GHz 9.5 GHz 5 0 12.0 GHz 8 10 12 14 16 18 Input Power (dBm) 20 22 24 26 Figure 6. - PowerPower Dissipation Derating Curve CMPA601C025F Dissipation De-Rating Curve 180 160 Power Dissipation (W) 140 Note 1 120 100 80 60 40 20 P… 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA601C025F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF CMPA601C025F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C2,C4,C5,C7,C9,C12 CAP,33000PF, 0805,100V, X7R 6 C1,C3,C6,C8,C10,C13 CAP, 1.0UF, 100V, 10%, X7R, 1210 6 C11,C14 CAP ELECT 3.3UF 80V FK SMD 2 R1,R2 RES 0.0 OHM 1/16W 0402 SMD 2 J1,J2 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST, 20MIL 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 W1 WIRE, BLACK, 22 AWG ~ 1.50” 1 W2 WIRE, BLACK, 22 AWG ~ 1.75” 1 Q1 CMPA601C025F 1 CMPA601C025F-AMP Demonstration Amplifier Circuit Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA601C025F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF CMP601C025F-AMP Demonstration Amplifier Circuit Schematic CMPA601C025F-AMP Demonstration Amplifier Circuit Outline Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA601C025F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Product Dimensions CMPA601C025F Pin Number Qty 1 Gate Bias for Stage 1, 2 & 3 2 Gate Bias for Stage 1, 2 & 3 3 RF IN 4 Gate Bias for Stage 1, 2 & 3 5 Gate Bias for Stage 1, 2 & 3 6 Drain Bias 7 Drain Bias 8 RF OUT 9 Drain Bias 10 Drain Bias Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA601C025F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Part Number System CMPA601C025F Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 6.0 GHz Upper Frequency1 12.0 GHz 25 W Flanged - Power Output Package Table 1. Note : Alpha characters used in frequency code 1 indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA601C025F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Product Ordering Information Order Number Description Unit of Measure CMPA601C025F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CMPA601C025F-TB CMPA601C025F-AMP Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CMPA601C025F Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 11 CMPA601C025F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF