CGH40006P - Cree, Inc

CGH40006P
6 W, RF Power GaN HEMT
Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the
CGH40006P ideal for linear and compressed amplifier circuits. The transistor is
available in a solder-down, pill package.
Package Type
s: 440109
PN’s: CGH4000
6P
FEATURES
APPLICATIONS
•
Up to 6 GHz Operation
•
2-Way Private Radio
•
13 dB Small Signal Gain at 2.0 GHz
•
Broadband Amplifiers
•
11 dB Small Signal Gain at 6.0 GHz
•
Cellular Infrastructure
•
8 W typical at PIN = 32 dBm
•
Test Instrumentation
•
65 % Efficiency at PIN = 32 dBm
•
Class A, AB, Linear amplifiers suitable for
•
28 V Operation
15
Rev 3.0 – May 20
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDSS
84
Volts
Conditions
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
2.1
mA
25˚C
Maximum Drain Current
IDMAX
0.75
A
25˚C
Soldering Temperature2
TS
245
˚C
RθJC
9.5
˚C/W
TC
-40, +150
˚C
1
Thermal Resistance, Junction to Case3
Case Operating Temperature
3
85˚C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH40006P at PDISS = 8 W.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 2.1 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 100 mA
Saturated Drain Current
IDS
1.7
2.1
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 2.1 mA
DC Characteristics1
RF Characteristics (TC = 25˚C, F0 = 2.0 GHz unless otherwise noted)
2
Small Signal Gain
GSS
11.5
13
–
dB
VDD = 28 V, IDQ = 100 mA
Power Output at PIN = 32 dBm
POUT
7.0
9
–
W
VDD = 28 V, IDQ = 100 mA
η
53
65
–
%
VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 100 mA,
PIN = 32 dBm
Input Capacitance
CGS
–
3.0
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
1.1
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.1
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency3
Output Mismatch Stress
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Measured in CGH40006P-AMP.
3
Drain Efficiency = POUT / PDC
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Small Signal Gain vs Frequency at 28 V of the CGH40006P in the CGH40006P-AMP
S-parameter 28 V
20
0
18
-2
16
-4
14
-6
12
-8
Gain (dB)
Gain (dB)
S-parameter 28 V
Input & Output Return Losses vs Frequency
28 V of the CGH40006P in the CGH40006P-AMP
10
-10
8
-12
6
-14
4
-16
2
-18
S11
S22
-20
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
7.0
1.0
2.0
3.0
Small Signal Gain vs Frequency at 20 V CGH40006P in the CGH40006P-AMP
S-parameter 20 V
5.0
6.0
7.0
Input & Output Return Losses vs Frequency at of the 20 V of the CGH40006P in the CGH40006P-AMP
S-parameter 20 V
20
0
18
-2
16
-4
14
-6
12
-8
Gain (dB)
Gain (dB)
4.0
Frequency (GHz)
Frequency (GHz)
10
8
-10
-12
6
-14
4
-16
2
-18
0
0.0
1.0
2.0
3.0
4.0
Frequency (GHz)
5.0
6.0
7.0
S22
S11
-20
0.0
1.0
2.0
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH40006P Rev 3.0
3.0
4.0
Frequency (GHz)
5.0
6.0
7.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Power Gain vs Output Power as a Function of Frequency
of the CGH40006P in the CGH40006P-AMP
Gain
vs =
Output
2,3,4,5
& 6 GHz
VDD
28 V,power,
IDQ = 100
mA
20
2.0 GHz
18
3.0 GHz
4.0 GHz
16
5.0 GHz
6.0 GHz
14
Gain (dB)
12
10
8
6
4
2
0
20
25
30
35
40
Output Power (dBm)
Drain Efficiency vs Output Power as a Function of Frequency
of the CGH40006P in the CGH40006P-AMP
Pout,
7 6 GHz
VEff
=vs28
V, I2,3,4,5
= 100
mA
DD
DQ
70%
2.0 GHz
60%
3.0 GHz
4.0 GHz
5.0 GHz
Drain Efficiency
50%
6.0 GHz
40%
30%
20%
10%
0%
20
25
30
35
40
Output Power (dBm)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Power Gain vs Frequency of the CGH40006P
in the CGH40006P-AMP at PIN = 30
dBm, VDD = 20 V
Power Gain 20V-Pin30dBm
10
10
9
9
8
8
7
7
6
6
Gain (dB)
Gain (dB)
Power Gain vs Frequency of the CGH40006P
in the CGH40006P-AMP
[email protected] 32=dBm
32 dBm, VDD = 28 V
Gain
5
4
5
4
3
3
2
2
1
1
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
6.0
2.0
2.5
3.0
3.5
Frequency (GHz)
12
12
10
10
8
8
6
4
2
5.0
5.5
6.0
5.0
5.5
6.0
6
4
2
0
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
3.5
Frequency (GHz)
4.0
4.5
Frequency (GHz)
Drain Efficiency vs Frequency of the CGH40006P
in the CGH40006P-AMP
at P 32=dBm
32 dBm, VDD = 28 V
EFF @ PinIN
Drain Efficiency vs Frequency of the CGH40006P
in the CGH40006P-AMP at PIN = 30
VDD
20 V
EFFdBm,
@ 20V, Pin
=30=
dBm
70%
70%
60%
60%
50%
50%
Drain Efficiency
Drain Efficiency
4.5
Output Power vs Frequency of the CGH40006P
in the CGH40006P-AMP at PIN = 30 dBm,
VDD = 20 V
Pout @ 20V
Output Power (W)
Output Power (W)
Output Power vs Frequency of the CGH40006P
in the CGH40006P-AMP
at P Pin=3232
dBm, VDD = 28 V
Power (w) @IN
dBm
40%
30%
40%
30%
20%
20%
10%
10%
0%
0%
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
Frequency (GHz)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
4.0
Frequency (GHz)
CGH40006P Rev 3.0
3.5
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Third Order Intermodulation Distortion vs Average Output Power
as a Function of Frequency of the CGH40006P in the CGH40006P-AMP
3=vs.
VIM
28 total
V, IDQoutput
= 60 power
mA
DD
0.0
2.0 GHz
-10.0
3.0 GHz
4.0 GHz
5.0 GHz
IM3 (dBc)
-20.0
6.0 GHz
-30.0
-40.0
-50.0
-60.0
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
Output Power (dBm)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH40006P Rev 3.0
K Factor
MAG (dB)
Simulated Maximum Available Gain and K Factor of the CGH40006P
VDD = 28 V, IDQ = 100 mA
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006P
VDD = 28 V, IDQ = 100 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A > 250 V
JEDEC JESD22 A114-D
Charge Device Model
CDM
1 < 200 V
JEDEC JESD22 C101-C
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
1000
13.78 + j6.9
61.5 + j47.4
2000
4.78 + j1.78
19.4 + j39.9
3000
2.57 - j6.94
12.57 + j23.1
4000
3.54 - j14.86
9.44 + j11.68
5000
4.42 - j25.8
9.78 + j4.85
6000
7.1 - j42.7
9.96 - j4.38
Note 1. VDD = 28V, IDQ = 100mA in the 440109 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be
used to maintain amplifier stability.
CGH40006P Power Dissipation De-rating Curve
Power Dissipation derating Curve vs max Tcase
9
8
Power Dissipation (W)
7
6
5
Note 1
4
3
2
1
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH40006P-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, AIN, 0505, 470 Ohms (≤5% tolerance)
1
R2
RES, AIN, 0505, 10 Ohms (≤5% tolerance)
1
R3
RES, AIN, 0505, 150 Ohms (≤5% tolerance)
1
C1
CAP, 2.0 pF +/-0.1 pF, 0603, ATC 600S
1
C2
CAP, 4.7 pF +/-0.1 pF, 0603, ATC 600S
1
C10
CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S
1
C4,C11
CAP, 8.2 pF +/-0.25, 0603, ATC 600S
2
C6,C13
CAP, 470 pF +/-5%, 0603, 100 V
2
C7,C14
CAP, 33000 pF, CER, 100V, X7R, 0805
2
C8
CAP, 10 uf, 16V, SMT, TANTALUM
1
C15
CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210
1
C16
CAP, 33 uF, 100V, ELECT, FK, SMD
1
CONN, SMA, STR, PANEL, JACK, RECP
2
HEADER RT>PLZ .1CEN LK 5POS
1
PCB, RO5880, 20 MIL
1
CGH40006P
1
J3,J4
J1
Q1
CGH40006P-AMP Demonstration Amplifier Circuit
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH40006P-AMP Demonstration Amplifier Circuit Schematic
CGH40006P-AMP Demonstration Amplifier Circuit Outline
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH40006P
(Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
0.905
-96.56
18.30
120.62
0.023
35.87
0.456
-52.76
0.889
-107.98
16.39
113.31
0.025
29.63
0.429
-58.98
700 MHz
0.877
-117.55
14.76
106.99
0.026
24.39
0.408
-64.31
800 MHz
0.867
-125.66
13.37
101.43
0.027
19.92
0.393
-68.96
900 MHz
0.860
-132.61
12.19
96.46
0.028
16.05
0.381
-73.11
1.0 GHz
0.854
-138.66
11.18
91.94
0.028
12.66
0.374
-76.87
1.1 GHz
0.849
-143.98
10.31
87.79
0.028
9.64
0.368
-80.34
1.2 GHz
0.845
-148.73
9.56
83.92
0.028
6.92
0.366
-83.57
1.3 GHz
0.842
-153.01
8.90
80.29
0.028
4.46
0.365
-86.61
1.4 GHz
0.839
-156.90
8.33
76.84
0.028
2.22
0.365
-89.49
1.5 GHz
0.837
-160.49
7.82
73.56
0.028
0.15
0.367
-92.24
1.6 GHz
0.835
-163.81
7.37
70.40
0.028
-1.75
0.369
-94.88
1.7 GHz
0.833
-166.92
6.96
67.36
0.028
-3.51
0.373
-97.43
1.8 GHz
0.832
-169.85
6.60
64.41
0.028
-5.15
0.376
-99.88
1.9 GHz
0.830
-172.62
6.27
61.54
0.028
-6.67
0.381
-102.27
2.0 GHz
0.829
-175.27
5.98
58.74
0.028
-8.08
0.386
-104.58
2.1 GHz
0.828
-177.81
5.71
56.00
0.028
-9.40
0.391
-106.84
2.2 GHz
0.827
179.75
5.46
53.32
0.027
-10.61
0.396
-109.04
2.3 GHz
0.826
177.38
5.24
50.68
0.027
-11.73
0.401
-111.19
2.4 GHz
0.825
175.07
5.03
48.09
0.027
-12.77
0.407
-113.29
2.5 GHz
0.824
172.82
4.84
45.53
0.027
-13.71
0.412
-115.36
2.6 GHz
0.823
170.61
4.67
43.00
0.026
-14.57
0.418
-117.38
2.7 GHz
0.821
168.44
4.51
40.50
0.026
-15.34
0.423
-119.36
2.8 GHz
0.820
166.30
4.36
38.02
0.026
-16.02
0.428
-121.32
2.9 GHz
0.819
164.18
4.22
35.57
0.026
-16.62
0.434
-123.24
3.0 GHz
0.818
162.08
4.09
33.13
0.026
-17.13
0.439
-125.13
3.2 GHz
0.816
157.91
3.85
28.31
0.025
-17.89
0.449
-128.84
3.4 GHz
0.813
153.76
3.65
23.53
0.025
-18.30
0.458
-132.46
3.6 GHz
0.810
149.58
3.47
18.78
0.025
-18.38
0.467
-136.00
3.8 GHz
0.807
145.35
3.31
14.05
0.024
-18.13
0.474
-139.48
4.0 GHz
0.804
141.05
3.18
9.32
0.024
-17.60
0.481
-142.91
4.2 GHz
0.801
136.66
3.05
4.57
0.024
-16.82
0.488
-146.30
4.4 GHz
0.797
132.15
2.94
-0.20
0.025
-15.89
0.493
-149.67
4.6 GHz
0.793
127.50
2.85
-5.01
0.025
-14.87
0.497
-153.02
4.8 GHz
0.789
122.70
2.76
-9.86
0.026
-13.89
0.500
-156.37
5.0 GHz
0.785
117.72
2.68
-14.79
0.027
-13.04
0.503
-159.74
5.2 GHz
0.780
112.55
2.62
-19.78
0.029
-12.42
0.504
-163.14
5.4 GHz
0.776
107.17
2.55
-24.86
0.030
-12.13
0.505
-166.59
5.6 GHz
0.772
101.58
2.50
-30.03
0.032
-12.22
0.504
-170.10
5.8 GHz
0.768
95.76
2.44
-35.30
0.035
-12.75
0.503
-173.70
6.0 GHz
0.764
89.70
2.40
-40.69
0.037
-13.73
0.501
-177.41
To download the s-parameters in s2p format, go to the CGH40006P Product Page and click on the documentation tab.
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH40006P (Package Type —
­ 440109)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH40006P
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH40006P-TB
CGH40006P-AMP
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
13
CGH40006P Rev 3.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, Wireless Devices
1.919.287.7816
Tom Dekker
Sales Director
Cree, Wireless Devices
1.919.313.5639
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
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CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf