CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package. Package Type s: 440109 PN’s: CGH4000 6P FEATURES APPLICATIONS • Up to 6 GHz Operation • 2-Way Private Radio • 13 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 11 dB Small Signal Gain at 6.0 GHz • Cellular Infrastructure • 8 W typical at PIN = 32 dBm • Test Instrumentation • 65 % Efficiency at PIN = 32 dBm • Class A, AB, Linear amplifiers suitable for • 28 V Operation 15 Rev 3.0 – May 20 OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts Conditions 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 2.1 mA 25˚C Maximum Drain Current IDMAX 0.75 A 25˚C Soldering Temperature2 TS 245 ˚C RθJC 9.5 ˚C/W TC -40, +150 ˚C 1 Thermal Resistance, Junction to Case3 Case Operating Temperature 3 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40006P at PDISS = 8 W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 2.1 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 100 mA Saturated Drain Current IDS 1.7 2.1 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 2.1 mA DC Characteristics1 RF Characteristics (TC = 25˚C, F0 = 2.0 GHz unless otherwise noted) 2 Small Signal Gain GSS 11.5 13 – dB VDD = 28 V, IDQ = 100 mA Power Output at PIN = 32 dBm POUT 7.0 9 – W VDD = 28 V, IDQ = 100 mA η 53 65 – % VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm Input Capacitance CGS – 3.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 1.1 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.1 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency3 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40006P-AMP. 3 Drain Efficiency = POUT / PDC Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH40006P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Small Signal Gain vs Frequency at 28 V of the CGH40006P in the CGH40006P-AMP S-parameter 28 V 20 0 18 -2 16 -4 14 -6 12 -8 Gain (dB) Gain (dB) S-parameter 28 V Input & Output Return Losses vs Frequency 28 V of the CGH40006P in the CGH40006P-AMP 10 -10 8 -12 6 -14 4 -16 2 -18 S11 S22 -20 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 7.0 1.0 2.0 3.0 Small Signal Gain vs Frequency at 20 V CGH40006P in the CGH40006P-AMP S-parameter 20 V 5.0 6.0 7.0 Input & Output Return Losses vs Frequency at of the 20 V of the CGH40006P in the CGH40006P-AMP S-parameter 20 V 20 0 18 -2 16 -4 14 -6 12 -8 Gain (dB) Gain (dB) 4.0 Frequency (GHz) Frequency (GHz) 10 8 -10 -12 6 -14 4 -16 2 -18 0 0.0 1.0 2.0 3.0 4.0 Frequency (GHz) 5.0 6.0 7.0 S22 S11 -20 0.0 1.0 2.0 Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH40006P Rev 3.0 3.0 4.0 Frequency (GHz) 5.0 6.0 7.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Power Gain vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-AMP Gain vs = Output 2,3,4,5 & 6 GHz VDD 28 V,power, IDQ = 100 mA 20 2.0 GHz 18 3.0 GHz 4.0 GHz 16 5.0 GHz 6.0 GHz 14 Gain (dB) 12 10 8 6 4 2 0 20 25 30 35 40 Output Power (dBm) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-AMP Pout, 7 6 GHz VEff =vs28 V, I2,3,4,5 = 100 mA DD DQ 70% 2.0 GHz 60% 3.0 GHz 4.0 GHz 5.0 GHz Drain Efficiency 50% 6.0 GHz 40% 30% 20% 10% 0% 20 25 30 35 40 Output Power (dBm) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH40006P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Power Gain vs Frequency of the CGH40006P in the CGH40006P-AMP at PIN = 30 dBm, VDD = 20 V Power Gain 20V-Pin30dBm 10 10 9 9 8 8 7 7 6 6 Gain (dB) Gain (dB) Power Gain vs Frequency of the CGH40006P in the CGH40006P-AMP at@PPinIN 32=dBm 32 dBm, VDD = 28 V Gain 5 4 5 4 3 3 2 2 1 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 2.0 2.5 3.0 3.5 Frequency (GHz) 12 12 10 10 8 8 6 4 2 5.0 5.5 6.0 5.0 5.5 6.0 6 4 2 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 3.5 Frequency (GHz) 4.0 4.5 Frequency (GHz) Drain Efficiency vs Frequency of the CGH40006P in the CGH40006P-AMP at P 32=dBm 32 dBm, VDD = 28 V EFF @ PinIN Drain Efficiency vs Frequency of the CGH40006P in the CGH40006P-AMP at PIN = 30 VDD 20 V EFFdBm, @ 20V, Pin =30= dBm 70% 70% 60% 60% 50% 50% Drain Efficiency Drain Efficiency 4.5 Output Power vs Frequency of the CGH40006P in the CGH40006P-AMP at PIN = 30 dBm, VDD = 20 V Pout @ 20V Output Power (W) Output Power (W) Output Power vs Frequency of the CGH40006P in the CGH40006P-AMP at P Pin=3232 dBm, VDD = 28 V Power (w) @IN dBm 40% 30% 40% 30% 20% 20% 10% 10% 0% 0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 Frequency (GHz) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 4.0 Frequency (GHz) CGH40006P Rev 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-AMP 3=vs. VIM 28 total V, IDQoutput = 60 power mA DD 0.0 2.0 GHz -10.0 3.0 GHz 4.0 GHz 5.0 GHz IM3 (dBc) -20.0 6.0 GHz -30.0 -40.0 -50.0 -60.0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Output Power (dBm) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH40006P Rev 3.0 K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH40006P VDD = 28 V, IDQ = 100 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006P VDD = 28 V, IDQ = 100 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH40006P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1000 13.78 + j6.9 61.5 + j47.4 2000 4.78 + j1.78 19.4 + j39.9 3000 2.57 - j6.94 12.57 + j23.1 4000 3.54 - j14.86 9.44 + j11.68 5000 4.42 - j25.8 9.78 + j4.85 6000 7.1 - j42.7 9.96 - j4.38 Note 1. VDD = 28V, IDQ = 100mA in the 440109 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40006P Power Dissipation De-rating Curve Power Dissipation derating Curve vs max Tcase 9 8 Power Dissipation (W) 7 6 5 Note 1 4 3 2 1 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH40006P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40006P-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, AIN, 0505, 470 Ohms (≤5% tolerance) 1 R2 RES, AIN, 0505, 10 Ohms (≤5% tolerance) 1 R3 RES, AIN, 0505, 150 Ohms (≤5% tolerance) 1 C1 CAP, 2.0 pF +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 4.7 pF +/-0.1 pF, 0603, ATC 600S 1 C10 CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S 1 C4,C11 CAP, 8.2 pF +/-0.25, 0603, ATC 600S 2 C6,C13 CAP, 470 pF +/-5%, 0603, 100 V 2 C7,C14 CAP, 33000 pF, CER, 100V, X7R, 0805 2 C8 CAP, 10 uf, 16V, SMT, TANTALUM 1 C15 CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 CONN, SMA, STR, PANEL, JACK, RECP 2 HEADER RT>PLZ .1CEN LK 5POS 1 PCB, RO5880, 20 MIL 1 CGH40006P 1 J3,J4 J1 Q1 CGH40006P-AMP Demonstration Amplifier Circuit Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH40006P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40006P-AMP Demonstration Amplifier Circuit Schematic CGH40006P-AMP Demonstration Amplifier Circuit Outline Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH40006P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40006P (Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 600 MHz 0.905 -96.56 18.30 120.62 0.023 35.87 0.456 -52.76 0.889 -107.98 16.39 113.31 0.025 29.63 0.429 -58.98 700 MHz 0.877 -117.55 14.76 106.99 0.026 24.39 0.408 -64.31 800 MHz 0.867 -125.66 13.37 101.43 0.027 19.92 0.393 -68.96 900 MHz 0.860 -132.61 12.19 96.46 0.028 16.05 0.381 -73.11 1.0 GHz 0.854 -138.66 11.18 91.94 0.028 12.66 0.374 -76.87 1.1 GHz 0.849 -143.98 10.31 87.79 0.028 9.64 0.368 -80.34 1.2 GHz 0.845 -148.73 9.56 83.92 0.028 6.92 0.366 -83.57 1.3 GHz 0.842 -153.01 8.90 80.29 0.028 4.46 0.365 -86.61 1.4 GHz 0.839 -156.90 8.33 76.84 0.028 2.22 0.365 -89.49 1.5 GHz 0.837 -160.49 7.82 73.56 0.028 0.15 0.367 -92.24 1.6 GHz 0.835 -163.81 7.37 70.40 0.028 -1.75 0.369 -94.88 1.7 GHz 0.833 -166.92 6.96 67.36 0.028 -3.51 0.373 -97.43 1.8 GHz 0.832 -169.85 6.60 64.41 0.028 -5.15 0.376 -99.88 1.9 GHz 0.830 -172.62 6.27 61.54 0.028 -6.67 0.381 -102.27 2.0 GHz 0.829 -175.27 5.98 58.74 0.028 -8.08 0.386 -104.58 2.1 GHz 0.828 -177.81 5.71 56.00 0.028 -9.40 0.391 -106.84 2.2 GHz 0.827 179.75 5.46 53.32 0.027 -10.61 0.396 -109.04 2.3 GHz 0.826 177.38 5.24 50.68 0.027 -11.73 0.401 -111.19 2.4 GHz 0.825 175.07 5.03 48.09 0.027 -12.77 0.407 -113.29 2.5 GHz 0.824 172.82 4.84 45.53 0.027 -13.71 0.412 -115.36 2.6 GHz 0.823 170.61 4.67 43.00 0.026 -14.57 0.418 -117.38 2.7 GHz 0.821 168.44 4.51 40.50 0.026 -15.34 0.423 -119.36 2.8 GHz 0.820 166.30 4.36 38.02 0.026 -16.02 0.428 -121.32 2.9 GHz 0.819 164.18 4.22 35.57 0.026 -16.62 0.434 -123.24 3.0 GHz 0.818 162.08 4.09 33.13 0.026 -17.13 0.439 -125.13 3.2 GHz 0.816 157.91 3.85 28.31 0.025 -17.89 0.449 -128.84 3.4 GHz 0.813 153.76 3.65 23.53 0.025 -18.30 0.458 -132.46 3.6 GHz 0.810 149.58 3.47 18.78 0.025 -18.38 0.467 -136.00 3.8 GHz 0.807 145.35 3.31 14.05 0.024 -18.13 0.474 -139.48 4.0 GHz 0.804 141.05 3.18 9.32 0.024 -17.60 0.481 -142.91 4.2 GHz 0.801 136.66 3.05 4.57 0.024 -16.82 0.488 -146.30 4.4 GHz 0.797 132.15 2.94 -0.20 0.025 -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 -153.02 4.8 GHz 0.789 122.70 2.76 -9.86 0.026 -13.89 0.500 -156.37 5.0 GHz 0.785 117.72 2.68 -14.79 0.027 -13.04 0.503 -159.74 5.2 GHz 0.780 112.55 2.62 -19.78 0.029 -12.42 0.504 -163.14 5.4 GHz 0.776 107.17 2.55 -24.86 0.030 -12.13 0.505 -166.59 5.6 GHz 0.772 101.58 2.50 -30.03 0.032 -12.22 0.504 -170.10 5.8 GHz 0.768 95.76 2.44 -35.30 0.035 -12.75 0.503 -173.70 6.0 GHz 0.764 89.70 2.40 -40.69 0.037 -13.73 0.501 -177.41 To download the s-parameters in s2p format, go to the CGH40006P Product Page and click on the documentation tab. Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH40006P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH40006P (Package Type — 440109) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH40006P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH40006P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH40006P-TB CGH40006P-AMP Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH40006P Rev 3.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, Wireless Devices 1.919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 1.919.313.5639 Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGH40006P Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf