CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440095 PN: CGH0912 0F Typical Performance Over 800-950 MHz (TC = 25˚C) of Demonstration Amplifier Parameter 800 MHz 850 MHz 900 MHz 950 MHz Units Gain @ 43 dBm 19.2 21.0 21.6 21.6 dB ACLR @ 43 dBm -40.5 -40.5 -39.0 -36.5 dBc Drain Efficiency @ 43 dBm 31.0 33.7 36.6 39.3 % Note: Measured in the CGH09120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF. Features UHF - 2.5 GHz Operation • 21 dB Gain • -38 dBc ACLR at 20 W PAVE • 35 % Efficiency at 20 W PAVE • High Degree of DPD Correction Can be Applied 2015 Rev 2.1 – June • Subject to change without notice. www.cree.com/RF 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Symbol Rating Units Conditions VDSS 84 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Power Dissipation PDISS 56 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 30 mA 25˚C Maximum Drain Current1 IDMAX 12 A 25˚C Soldering Temperature2 TS 245 ˚C τ 80 in-oz RθJC 1.7 ˚C/W TC -40, +150 ˚C Screw Torque Thermal Resistance, Junction to Case 3 Case Operating Temperature3 85˚C Note: Current limit for long term, reliable operation. Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH09120F at PDISS = 56 W 1 2 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 28.8 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 1.2 A Saturated Drain Current2 IDS 23.2 28.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 28.8 mA DC Characteristics Conditions 1 RF Characteristics5 (TC = 25˚C, F0 = 870 MHz unless otherwise noted) Saturated Output Power3,4 PSAT – 120 – W VDD = 28 V, IDQ = 1.2 A, η – 75 – % VDD = 28 V, IDQ = 1.2 A, POUT = PSAT GSS 20 21.5 – dB VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm ACLR – -38 –34 dBc VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm η 31 35 – % VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 1.2 A, POUT = 20 W CW Input Capacitance CGS – 35.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 9.1 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 1.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Pulsed Drain Efficiency3 Modulated Gain 6 WCDMA Linearity6 Modulated Drain Efficiency 6 Output Mismatch Stress Dynamic Characteristics Notes: Measured on wafer prior to packaging. Scaled from PCM data. 3 Pulse Width = 40 μS, Duty Cycle = 5 %. 4 PSAT is defined as IG = 10 mA peak. 5 Measured in CGH09120F-AMP 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF. 1 2 Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Pulse Performance Typical Pulsed Output Power, Drain Efficiency, and Gain vs Input Power measured in CGH09120F-AMP Amplifier Circuit. VDS = 28 V, IDS = 1.2 A, Freq = 870 MHz, Pulse Width = 40 μS, Duty Cycle = 5 % 80 25 70 23 Gain 50 21 19 Output Power 40 17 Drain Efficiency 30 Gain (dB) Output Power (dBm) Drain Efficiency (%) 60 15 20 13 Output Power 10 11 Drain Efficiency Gain 0 9 0 5 10 15 20 25 30 35 40 Input Power (dBm) 54.0 100 53.6 90 53.2 80 52.8 70 Drain Efficiency 52.4 60 52.0 Psat Drain Efficiency 51.6 50 40 Psat 51.2 30 50.8 20 50.4 10 50.0 700 750 800 850 900 950 Drain Efficiency (%) Saturated Output Power (dBm) Typical Pulsed Saturated Power vs Frequency measured in CGH09120F-AMP Amplifier Circuit. VDS = 28 V, IDS = 1.2 A, PSAT = 10 mA IGS Peak, Pulse Width = 40 μS, Duty Cycle = 5 % 0 1000 Frequency (MHz) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Linear Performance Typical Small Signal Gain and Return Loss vs Frequency measured in CGH09120F-AMP Amplifier Circuit. VDS = 28 V, IDS = 1.2 A 25 10 23 5 21 0 19 -5 17 -10 Return Loss Gain 15 -15 Return Loss 13 750 800 Return Loss (dB) Linear Gain (dB) Gain 850 900 950 -20 1000 Frequency (MHz) Typical WCDMA Performance Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power measured in CGH09120F-AMP Amplifier Circuit. 3GPP Test Model 1, 64 DPCH 67 % Clipping, 8.81 dB PAR @ 0.01 % VDS = 28 V, IDS = 1.2 A, Frequency = 870 MHz -30 50 -ACLR -32 45 +ACLR Drain Efficiency -34 40 35 ACLR -38 30 -40 25 -42 20 Drain Efficiency -44 Drain Efficiency (%) ACLR (dBc) -36 15 -46 10 -48 5 -50 0 25 30 35 40 45 50 Output Power (dBm) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WCDMA Digital Pre-Distortion (DPD) Performance WCDMA Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power measured in CGH09120F-AMP Amplifier Circuit. Two Channel WCDMA 7.5dB PAR with CFR VDS = 28 V, IDS = 1.2 A, Frequency = 870 MHz -20 50 -25 Uncorrected -ACLR Uncorrected +ACLR Corrected -ACLR Corrected +ACLR Uncorrected Drain Eff Corrected Drain Eff 45 -30 40 35 Uncorrected ACLR -40 30 -45 25 Drain Efficiency -50 20 Corrected ACLR -55 Drain Efficiency (%) ACLR (dBc) -35 15 -60 10 -65 5 -70 0 24 29 34 39 44 Output Power (dBm) WCDMA Linearity with DPD Linearizer measured in CGH09120F-AMP Amplifier Circuit. Two Channel WCDMA 7.5dB PAR with CFR VDS = 28 V, IDS = 1.2 A, POUT = 43 dBm, Efficiency = 35 % -10 -20 Uncorrected -30 DPD Corrected -40 -50 -60 -70 -80 -90 840 850 860 870 880 890 900 Frequency (MHz) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH09120F VDD = 28 V, IDQ = 1.2 A Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH09120F VDD = 28 V, IDQ = 1.2 A Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 700 0.75 - j 0.58 5.59 - j 2.12 750 0.84 - j 0.18 4.97 - j 1.25 800 0.90 + j 0.19 4.68 - j 0.37 850 0.95 + j 0.59 4.59 + j 0.45 900 1.02 + j 1.03 4.67 + j 1.19 950 1.17 + j 1.53 4.90 + j 1.82 1000 1.53 + j 2.10 5.28 + j 2.31 Note1 VDD = 28V, IDQ = 1.2 A in the 440095 package. Note2 Impedances are extracted from CGH09120F-AMP demonstration circuit and are not source and load pull data derived from transistor. CGH09120F Power Dissipation CGH09120F De-ratingAverage CurvePower Dissipation De-rating Curve 70 60 Power Dissipation (W) 50 40 30 Note 1 20 10 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH09120F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 511 OHMS R2 RES, 1/16W, 0603, 1%, 5.1 OHMS 1 CAP, 33 pF +/- 5%, 250V, 0805, ATC 600F 2 C1, C24 1 C2 CAP, 3.0 pF, +/- 0.1pF, 0603, ATC600S 1 C3, C4 CAP, 3.3 pF, +/- 0.1pF, 0603, ATC600S 2 C5, C6 CAP, 2.7 pF, +/- 0.1pF, 0603, ATC600S 2 C7, C8, C9, C10, C11, C12 CAP, 6.8pF, +/- 0.25 pF, 0603, ATC600S 6 C13, C25 CAP, 56 pF +/- 5%, 0603 , ATC600S 2 C14, C26 CAP, 100 pF, +/-5%, 0603, ATC600S 2 C15, C27 CAP, 470 pF, 5%, 100V, 0603, X7R 2 C16, C28 CAP, 33000 pF, 0805, 100V, X7R 2 CAP, 10 uF, 16V, TANTALUM 1 CAP, 3.9 pF, +/- 0.1pF, 0603, ATC600S 4 C22, C23 CAP, 2.4PF, +/-0.1 pF, 0603, ATC600S 2 C29 CAP, 1.0 uF, +/-10%, 1210, 100V, X7R 1 C30 CAP 100 uF, 160V, ELECTROLYTIC 1 C17 C18, C19, C20, C21 L1 INDUCTOR, CHIP, 10nH, 0603, SMT 1 L2 FERRITE, 22 OHM, 0805, BLM21PG220SN1 1 J1, J2 CONN, N-Type, Female, 0.500 SMA Flange 2 J3 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 1 - PCB, RO4003, Er = 3.38, h = 32 mil 1 - CGH09120F 1 CGH09120F-AMP Demonstration Amplifier Circuit Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH09120F-AMP Demonstration Amplifier Circuit Schematic CGH09120F-AMP Demonstration Amplifier Circuit Outline Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH09120F (Small Signal, VDS = 28 V, IDQ = 1.2 A, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.962 -177.69 4.16 80.41 0.006 15.01 0.812 -179.78 600 MHz 0.962 -178.94 3.46 77.69 0.006 17.16 0.814 179.92 700 MHz 0.962 -179.97 2.97 75.09 0.006 19.38 0.815 179.65 800 MHz 0.962 179.14 2.59 72.58 0.006 21.64 0.816 179.40 900 MHz 0.962 178.33 2.30 70.14 0.006 23.89 0.818 179.15 1.0 GHz 0.962 177.59 2.07 67.74 0.007 26.12 0.820 178.90 1.1 GHz 0.962 176.88 1.88 65.40 0.007 28.30 0.821 178.64 1.2 GHz 0.962 176.21 1.73 63.09 0.007 30.42 0.823 178.37 1.3 GHz 0.961 175.55 1.59 60.83 0.007 32.47 0.825 178.09 1.4 GHz 0.961 174.91 1.48 58.60 0.008 34.43 0.827 177.80 1.5 GHz 0.961 174.28 1.38 56.40 0.008 36.30 0.829 177.50 1.6 GHz 0.961 173.65 1.29 54.24 0.008 38.06 0.831 177.18 1.7 GHz 0.961 173.02 1.22 52.12 0.008 39.70 0.833 176.84 1.8 GHz 0.960 172.40 1.15 50.02 0.009 41.24 0.835 176.49 1.9 GHz 0.960 171.77 1.09 47.96 0.009 42.65 0.836 176.13 2.0 GHz 0.960 171.14 1.04 45.93 0.010 43.95 0.838 175.75 2.1 GHz 0.959 170.50 1.00 43.92 0.010 45.13 0.840 175.35 2.2 GHz 0.959 169.86 0.95 41.94 0.011 46.19 0.841 174.93 2.3 GHz 0.958 169.20 0.92 39.99 0.011 47.13 0.843 174.50 2.4 GHz 0.958 168.54 0.88 38.07 0.012 47.96 0.844 174.05 2.5 GHz 0.957 167.86 0.85 36.16 0.013 48.68 0.846 173.59 2.6 GHz 0.956 167.17 0.82 34.28 0.013 49.30 0.847 173.11 2.7 GHz 0.956 166.46 0.80 32.42 0.014 49.81 0.848 172.61 2.8 GHz 0.955 165.74 0.78 30.58 0.015 50.22 0.849 172.10 2.9 GHz 0.954 165.00 0.76 28.75 0.015 50.54 0.850 171.56 3.0 GHz 0.953 164.24 0.74 26.94 0.016 50.76 0.850 171.01 3.2 GHz 0.951 162.65 0.71 23.34 0.018 50.94 0.851 169.86 3.4 GHz 0.948 160.96 0.68 19.78 0.021 50.78 0.851 168.62 3.6 GHz 0.945 159.15 0.67 16.22 0.023 50.30 0.850 167.31 3.8 GHz 0.941 157.21 0.65 12.64 0.026 49.50 0.848 165.90 4.0 GHz 0.936 155.11 0.65 9.02 0.029 48.38 0.846 164.39 4.2 GHz 0.931 152.81 0.64 5.33 0.033 46.95 0.842 162.78 4.4 GHz 0.924 150.30 0.65 1.52 0.038 45.18 0.837 161.04 4.6 GHz 0.916 147.52 0.66 -2.44 0.043 43.05 0.831 159.17 4.8 GHz 0.907 144.44 0.67 -6.59 0.049 40.54 0.823 157.14 5.0 GHz 0.896 140.98 0.69 -11.01 0.056 37.59 0.813 154.94 5.2 GHz 0.882 137.08 0.72 -15.75 0.065 34.17 0.801 152.55 5.4 GHz 0.865 132.66 0.75 -20.88 0.075 30.19 0.786 149.94 5.6 GHz 0.844 127.59 0.79 -26.51 0.087 25.59 0.769 147.10 5.8 GHz 0.818 121.74 0.84 -32.73 0.102 20.26 0.749 143.99 6.0 GHz 0.787 114.95 0.90 -39.65 0.119 14.11 0.725 140.60 To download the s-parameters in s2p format, go to the CGH09120F Product Page and click on the documentation tab. Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH09120F (Package Type — 440095) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH09120F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH09120F-TB CGH09120F-AMP Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH09120F Rev 2.1 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH09120F Rev 2.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf