CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance. PN: CMPA801B 025F/ CMPA80 1B025P Package Type : 440208 / 44 0216 Typical Performance Over 8.5-11.0 GHz (TC = 25˚C) Parameter 8.5 GHz 10.0 GHz 11.0 GHz Units 38.0 37.0 35.5 W Output Power 45.8 45.7 45.5 dBm Power Added Efficiency1 37.0 36.0 35.0 % Output Power 1 1 Note : Measured in CMPA801B025F-AMP under 100 uS pulse width, 10% duty. 1 Features Applications • 8.5 - 11.0 GHz Operation • Marine Radar • 37 W POUT typical • Communications • 16 dB Power Gain • Satellite Communication Uplink • 36 % Typical PAE 15 Rev 3.0 – May 20 • 50 Ohm internally matched • <0.1 dB Power droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage VDSS 84 VDC 25˚C Gate-source Voltage VGS -10, +2 VDC 25˚C Power Dissipation PDISS 77 W Storage Temperature TSTG -55, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 13 mA Soldering Temperature1 TS 245 ˚C 25˚C Screw Torque τ 40 in-oz Thermal Resistance, Junction to Case RθJC 1.22 ˚C/W Pulse Width = 100 µs, Duty Cycle = 10%, PDISS = 55 W Thermal Resistance, Junction to Case RθJC 1.80 ˚C/W CW, PDISS = 55 W, 85˚C Case Operating Temperature TC -40, +130 ˚C Pulse Width = 100 µs, Duty Cycle = 10%, PDISS = 55 W Case Operating Temperature TC -40, +90 ˚C CW, PDISS = 55 W Note: 1 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library Electrical Characteristics (Frequency = 8.5 GHz to 11.0 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units VGS(TH) -3.8 -3.0 -2.3 V VDS = 10 V, ID = 13.2 mA Gate Quiscent Voltage VQ – -2.7 – V VDS = 28 V, ID = 1.2 A Saturated Drain Current2 IDS 10.6 13.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 84 100 – V VGS = -8 V, ID = 13.2 mA Small Signal Gain S21 21 24 – dB Input Return Loss S11 – –6.0 – dB VDD = 28 V, IDQ = 1.2 A Output Return Loss S22 – –6.0 – dB VDD = 28 V, IDQ = 1.2 A DC Characteristics Gate Threshold RF Characteristics Conditions 1 3 VDD = 28 V, IDQ = 1.2 A, PIN = -20 dBm No damage at all phase angles, VDD = Output Mismatch Stress VSWR – – 5:1 Y 28 V, IDQ = 1.2 A, Pulse Width = 100 µs, Duty Cycle = 10%, PIN = 30 dBm Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in the CMPA801B025F-AMP. Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA801B025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics Continued... (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Output Power POUT1 44.75 45.8 – dBm VDD = 28 V, IDQ = 1.2 A, Frequency = 8.5 GHz, PIN = 30 dBm Output Power POUT2 44.75 45.7 – dBm VDD = 28 V, IDQ = 1.2 A, Frequency = 10.0 GHz, PIN = 30 dBm Output Power POUT3 44.35 45.5 – dBm VDD = 28 V, IDQ = 1.2 A, Frequency = 11.0 GHz, PIN = 30 dBm Power Gain G1 14.75 15.8 – dB VDD = 28 V, IDQ = 1.2 A, Frequency = 8.5 GHz, PIN = 30 dBm Power Gain G2 14.75 15.7 – dB VDD = 28 V, IDQ = 1.2 A, Frequency = 10.0 GHz, PIN = 30 dBm Power Gain G3 14.35 15.5 – dB VDD = 28 V, IDQ = 1.2 A, Frequency = 11.0 GHz, PIN = 30 dBm Power Added Efficiency PAE1 29 37 – % VDD = 28 V, IDQ = 1.2 A, Frequency = 8.5 GHz, PIN = 30 dBm Power Added Efficiency PAE2 29 36 – % VDD = 28 V, IDQ = 1.2 A, Frequency = 10.0 GHz, PIN = 30 dBm Power Added Efficiency PAE3 27 35 – % VDD = 28 V, IDQ = 1.2 A, Frequency = 11.0 GHz, PIN = 30 dBm Pulse Amplitude Droop D – 0.1 – dB VDD = 28 V, IDQ = 1.2 A, Frequency = 8.5 - 11.0 GHz, PIN = 30 dBm RF Characteristics1,2 Notes: 1 Pulse Width = 100 μS, Duty Cycle = 10 %. 2 Measured in CMPA801B025F-AMP. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA801B025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA801B025F Typical Performance 50 50% 45 45% 40 40% 35 35% 30 30% 25 25% 20 20% 15 15% 10 5 0 7500 Output Power (W) 10% Gain (dB) Output Power (dBm) 5% PAE (%) 8000 8500 Efficiency (%) Power (W, dBm) Gain (dB) Figure 1. - Output Power, Gain and Power Added Efficiency vs. Frequency VDD = 28 V, PIN = 30 dBm, IDQ = 1.2 A Pulsed data 100uS 10% Vdd=28v Pin=30dBm Idq=1200mA Pulse Width = 100 μS, Duty Cycle = 10 % 9000 9500 10000 Frequency (MHz) 10500 11000 0% 11500 50 50% 45 45% 40 40% 35 35% 30 30% 25 25% 20 20% 15 15% 10 5 0 7500 10% CW Psat Power (W) CW Psat Power (dBm) CW Psat Gain (dB) CW Psat PAE (%) 8000 8500 5% 9000 9500 10000 Frequency (MHz) 10500 11000 Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA801B025F Rev 3.0 Efficiency (%) Power (W, dBm) Gain (dB) Figure 2. - Output Power, Gain and Power Added Efficiency vs. Frequency VDD = 28Psat V, I(Ig≈1.5mA) = 1.2 A,Vd=28V CW PSAT (IG ≈ 1.5mA) CW Idq=1200mA DQ 0% 11500 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA801B025F Typical Performance 50% 45 45% 40 40% 35 35% 30 30% 25 25% 20 20% 15 15% Output Power (dBm) 10 10% Output Power (W) Gain (dB) 5 Efficiency % Power (W, dBm) Gain (dB) 50 Figure 3. - Output Power, Gain and Power Added Efficiency vs. Input Power VDD = 28 V, IDQ = 1.2 A, Frequency = 11 GHz 5% PAE % 0% 0 16 18 20 22 24 26 28 30 32 Input Power (dBm) Figure 4. -Small SmallSignal SignalS-Parameters S-Parameters Frequency vs. vs. Frequency 30 S11 (dB), S21 (dB), S22 (dB) 20 10 0 -10 -20 S(2,1) S(1,1) -30 6000 S(2,2) 7000 8000 9000 10000 11000 12000 Frequency (MHz) Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA801B025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA801B025F Typical Performance Figure 5. - Power Dissipation CMPA801B025F Power DissipationDerating De-Rating Curve Curve 90 80 Power Dissipation (W) 70 60 50 40 Note 1 Derating Curve Pulsed 10% 100uS 30 Derating Curve CW ` 20 10 0 0 25 50 75 100 125 150 Maximum Case Temperature ( C) 175 200 225 250 Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA801B025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA801B025F-AMP Demonstration Amplifier Circuit Bill of Materials Designator C15 Description Qty CAP ELECT 100UF 80V AFK SMD 1 RES 0.0 OHM 1/16W 0402 SMD 2 W1 WIRE, BLACK, 22 AWG ~ 1.50” 1 W2 WIRE, BLACK, 22 AWG ~ 1.75” 1 W3 WIRE, BLACK, 22 AWG ~ 2.0” 1 CONNECTOR, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST, 20MIL 2 J3 CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR, SMB-U SURFACE MOUNT 1 - PCB, TEST FIXTURE, TACONICS RF35P, 20 MILS, 440208 PKG 1 - 2-56 SOC HD SCREW 1/4 SS 4 - #2 SPLIT LOCKWASHER SS 4 CMPA801B025F 1 R1, R2 J1,J2 Q1 CMPA801B025F-AMP Demonstration Amplifier Circuit Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA801B025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA801B025F-AMP Demonstration Amplifier Circuit Schematic CMPA801B025F-AMP Demonstration Amplifier Circuit Outline Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA801B025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA801B025F-AMP Demonstration Amplifier Circuit Schematic To configure the CMPA801B025F test fixture to enable independent VG1 / VG2 control of the device, a cut must be made to the microstrip line just above the R1 resistor as shown. Pin 9 will then supply VG1 and Pin 8 will supply VG2. CMPA801B025F Typical Performance ThetaJC (⁰C/W) Figure 7. - Transient Thermal Performance TCASE 85°C X-Band MMIC on 440208 Pkg, .25" Thk=Cu Fixture, Tcase=85⁰C 1.90 1.85 1.80 1.75 1.70 1.65 1.60 1.55 1.50 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 1.00E-06 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle 1.00E-05 1.00E-04 1.00E-03 Time (seconds) 1.00E-02 1.00E-01 Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA801B025F Rev 3.0 1.00E+00 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CMPA801B025F (Package Type — 440208) Pin Number Qty 1 Gate Bias for Stage 2 2 Gate Bias for Stage 2 3 RF In 4 Gate Bias for Stage 1 5 Gate Bias for Stage 1 6 Drain Bias 7 Drain Bias 8 RF Out 9 Drain Bias 10 Drain Bias 11 Source Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CMPA801B025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CMPA801B025F Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 8.5 GHz Upper Frequency1 11.0 GHz 25 W Flange - Power Output Package Table 1. Note : Alpha characters used in frequency code 1 indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 11 CMPA801B025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CMPA801B025F GaN HEMT Each CMPA801B025P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CMPA801B025F-TB CMPA801B025F-AMP Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 12 CMPA801B025F Rev 3.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2011-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 13 CMPA801B025F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf