BCV26 / BCV46 PNP Darlington Transistors for preamplifier input applications TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Symbol BCV26 BCV46 BCV26 BCV46 Value 40 80 30 60 -VCBO -VCEO Emitter Base Voltage Unit V V -VEBO 10 V Collector Current -IC 500 mA Peak Collector Current -ICM 800 mA Base Current -IB 100 mA Total Power Dissipation Ptot 200 mW Tj 150 O TStg - 65 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 100 mA Collector Base Cutoff Current at -VCB = 30 V at -VCB = 60 V Emitter Base Cutoff Current at -VEB = 10 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter On-state Voltage at -IC = 10 mA, -VCE = 5 V Transition Frequency at -VCE = 5 V, -IC = 30 mA, f = 100 MHz C C Symbol Min. Typ. Max. Unit BCV26 BCV46 BCV26 BCV46 BCV26 BCV46 hFE hFE hFE hFE hFE hFE 4000 2000 10000 4000 20000 10000 - - - BCV26 BCV46 -ICBO - - 100 100 nA -IEBO - - 100 nA - - V -V(BR)CEO 40 80 30 60 - - V -V(BR)EBO 10 - - V -VCE(sat) - - 1 V -VBE(sat) - - 1.5 V -VBE(on) - - 1.4 V fT - 220 - MHz BCV26 BCV46 BCV26 BCV46 -V(BR)CBO SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 BCV26 / BCV46 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01