MMBTA13 NPN Silicon Epitaxial Planar Darlington Transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage VEBO 10 V Collector Current IC 500 mA Power Dissipation Ptot 350 mW Thermal Resistance, Junction to Ambient RθJA 357 Tj 150 O TStg -55 to + 150 O Junction Temperature Storage Temperature Range C/W O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit hFE hFE 5,000 10,000 - - ICBO - 100 nA IEBO - 100 nA Collector Emitter Breakdown Voltage at IC = 100 μA V(BR)CES 30 - V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA VCE(sat) - 1.5 V Base Emitter On Voltage at IC = 100 mA, VCE = 5 V VBE(on) - 2 V fT 125 - MHz DC Current Gain at VCE = 5 V, IC =10 mA at VCE = 5 V, IC =100 mA Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 10 V Transition Frequency at VCE =10 V, IC =10 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev: 01