COMPLEMENTARY SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTOR ZTX653/ZTX753DCSM • Complimentary Silicon Planar NPN/PNP Transistors • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range ZTX653 ZTX753 120V 100V 5V 2A 2A -120V -100V -5V -2A -2A 1.0W 8mW/°C -55 to +150°C -55 to +150°C THERMAL PROPERTIES (Each Device) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max. Units 125 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc Telephone +44 (0) 1455 556565 Email: [email protected] Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Document Number: 2836 Issue 3 Page 1 of 6 SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS ZTX653/ZTX753DCSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols (1) V(BR)CBO (1) V(BR)CEO (1) V(BR)EBO Parameters Test Conditions Collector-Base Breakdown Voltage IC = 100µA 120 IC = -100µA ZTX753 -120 Collector-Emitter Breakdown Voltage IC = 10mA ZTX653 100 IC = -10mA ZTX753 -100 Emitter-Base Breakdown Voltage IE = 100µA Collector-Base Cut-off Current (1) ICBO Emitter-Base Cut-off Current (1) IEBO ZTX753 -5 VCB = 100V ZTX653 T C = 100°C 0.1 VCB = -100V ZTX753 T C = 100°C -0.1 ZTX653 0.1 ZTX753 -0.1 IB = 100mA IC = -1.0A IB = -100mA IC = 2A IB = 200mA IC = -2A IB = -200mA IC = 1.0A (1) Base-Emitter Saturation Voltage IB = 100mA IC = -1.0A IB = -100mA IC = 1.0A VBE(on) (1) Base-Emitter Turn-On Voltage -10 VEB = -4V IC = 1.0A VBE(sat) 10 VEB = 4V IB = -50mA VCE = 2V IC = 1.0A VCE = 2V Units V 5 IC = -500mA Collector-Emitter Saturation Voltage Max. ZTX653 IB = 50mA (1) Typ. IE = -100µA IC = 500mA VCE(sat) Min. ZTX653 ZTX653 0.2 0.3 ZTX753 -0.2 -0.3 ZTX653 0.35 0.5 ZTX753 -0.35 -0.5 ZTX6 ZTX653 0.8 1.0 ZTX753 -0.8 -1.0 ZTX6 ZTX653 1.0 1.3 ZTX753 -1.0 -1.3 ZTX6 ZTX653 0.95 1.2 ZTX753 -0.95 -1.2 µA V Table continued on the next page Semelab plc Telephone +44 (0) 1455 556565 Email: [email protected] Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Document Number: 2836 Issue 3 Page 2 of 6 SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS ZTX653/ZTX753DCSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Continued Symbols Parameters Test Conditions IC = 50mA VCE = 2V IC = -50mA VCE = -2V IC = 500mA VCE = 2V IC = -500mA hFE (1) VCE = -2V DC Current Gain IC = 1.0A Min. Typ. 70 200 100 200 Max. Units ZTX653 ZTX753 ZTX653 300 ZTX753 ZTX653 VCE = 2V IC = -1.0A VCE = -2V IC = 2A 55 110 25 55 Min. Typ 140 175 100 140 ZTX753 ZTX653 VCE = 2V IC = -2A VCE = -2V ZTX753 DYNAMIC CHARACTERISTICS Symbols fT Cobo Ton Parameters Test Conditions Transition Frequency Output Capacitance Turn-On Time IC = 100mA VCE = 5V f =100MHz IC = -100mA ZTX653 VCE = -5V f =100MHz IE = 0 ZTX753 VCB = 10V f =1.0MHz IE = 0 ZTX653 VCB = -10V f =1.0MHz IC = 500mA VCC = 10V ZTX753 Toff Turn-Off Time 30 80 ZTX753 40 IB1= IB2 = 50mA ZTX653 1200 IB1= IB2 = -50mA ZTX753 600 VCC = -10V Units MHz ZTX653 IC = -500mA Max. pF ns Notes (1) Pulse Width ≤ 380us, δ ≤ 2% Semelab plc Telephone +44 (0) 1455 556565 Email: [email protected] Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Document Number: 2836 Issue 3 Page 3 of 6 SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS ZTX653/ZTX753DCSM TYPICAL DEVICE CHARACTERISTICS ZTX653 VBE(on) vs IC 1.4 1.2 VCE = 2V 1.2 VBE Voltage (V) VBE Voltage (V) ZTX753 VBE(on) vs IC 1.4 1 0.8 0.6 0.4 VCE = 2V 1 0.8 0.6 0.4 0.2 0.2 0 0.001 0.01 0.1 1 0 0.001 10 0.01 IC Current (A) 25°C Voltage (V) 2 150°C 25°C -55°C ZTX653 VCESAT vs IC 7 1.5 1 0.5 10 -55°C IC / IB = 10 5 4 3 2 1 0 0.001 0.01 0.1 1 0 0.001 10 0.01 0.1 100°C 150°C 25°C -55°C ZTX653 VBESAT vs IC 3 10 2.5 Voltage (V) 2 1.5 1 100°C 150°C -55°C ZTX753 VBESAT vs IC 3 IC / IB = 10 2.5 1 IC Current (A) IC Current (A) 25°C Voltage (V) 1 ZTX753 VCESAT vs IC 6 IC / IB = 10 Voltage (V) 2.5 100°C 0.1 IC Current (A) 100°C 150°C IC / IB = 10 2 1.5 1 0.5 0.5 0 0.001 0.01 0.1 1 10 0 0.001 0.01 25°C Semelab plc Telephone +44 (0) 1455 556565 Email: [email protected] 100°C 150°C 0.1 1 10 IC Current (A) IC Current (A) -55°C Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com 25°C 100°C 150°C -55°C Document Number: 2836 Issue 3 Page 4 of 6 SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS ZTX653/ZTX753DCSM TYPICAL DEVICE CHARACTERISTICS (Continued) ZTX753 ICES vs VCE ZTX653 ICES vs VCE 7.0E-6 8.0E-6 6.0E-6 7.0E-6 6.0E-6 ICES (A) ICES (A) 5.0E-6 4.0E-6 3.0E-6 2.0E-6 5.0E-6 4.0E-6 3.0E-6 2.0E-6 1.0E-6 1.0E-6 000.0E+0 000.0E+0 -1.0E-6 -1.0E-6 0 50 100 150 0 50 25°C 250 100°C 100 150 VCE (V) VCE (V) 150°C -55°C 25°C 100°C 150°C -55°C ZTX753 HFE vs IC ZTX653 HFE vs IC 350 300 200 250 HFE HFE 150 100 200 150 100 50 VCE = 2V 0 0.001 0.01 50 0.1 1 10 VCE = 2V 0 0.001 0.01 0.1 IC (A) 25°C Semelab plc Telephone +44 (0) 1455 556565 Email: [email protected] 100°C 1 10 IC (A) 150°C -55°C Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com 25°C 100°C 150°C -55°C Document Number: 2836 Issue 3 Page 5 of 6 SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS ZTX653/ZTX753DCSM MECHANICAL DATA Dimensions in mm (inches) 2.54 ± 0.13 (0.10 ± 0.005) 2 3 1 4 A 6 0.23 rad. (0.009) 5 6.22 ± 0.13 (0.245 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 4.32 ± 0.13 (0.170 ± 0.005) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.06 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO(MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Semelab plc Telephone +44 (0) 1455 556565 Email: [email protected] Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Document Number: 2836 Issue 3 Page 6 of 6