RU190N10S N-Channel Advanced Power MOSFET Features Pin Description · 100V/190A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-263 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C ① 190 V A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) TC=25°C TC=25°C PD RθJC Maximum Power Dissipation Thermal Resistance -Junction to Case TC=100°C ② 700 ① 190 A ① TC=25°C 140 312 TC=100°C 156 W 0.48 °C/W 625 mJ Drain-Source Avalanche Ratings ③ Avalanche Energy ,Single Pulsed EAS Storage Temperature Range -55 to 150 Copyright Ruichips Semiconductor Co., Ltd Rev. D – JAN., 2010 www.ruichips.com RU190N10S Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU190N10S Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA 100 V VDS= 100V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=60A 30 2 3 6.5 µA 4 V ±100 nA 8.0 mΩ 1.2 V Diode Characteristics VSD ④ trr Diode Forward Voltage ISD=60 A, VGS=0V Reverse Recovery Time 68 ns 130 nC 1.0 Ω ISD=60A, dlSD/dt=100A/µs qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz 6700 1000 pF 510 23 VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=6Ω Turn-off Fall Time 42 ns 120 75 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 155 VDS=30V, VGS= 10V, IDS=60A 45 nC 48 Calculated continuous current based on maximum allowable junction temperature. Pulse width limited by safe operating area. Limited by TJmax, IAS =50A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. D– JAN., 2010 2 www.ruichips.com RU190N10S Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D– JAN., 2010 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU190N10S Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) VDS - Drain-Source Voltage (V) VGS - Gate - Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D– JAN., 2010 Tj - Junction Temperature (°C) 4 www.ruichips.com RU190N10S Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D– JAN., 2010 QG - Gate Charge (nC) 5 www.ruichips.com RU190N10S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. D– JAN., 2010 6 www.ruichips.com RU190N10S Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU190N10S RU190N10S TO-263 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. D– JAN., 2010 7 www.ruichips.com RU190N10S Package Information TO-263-2L SYMBOL MM INCH MM MIN NOM MAX MIN NOM MAX 4.40 4.57 4.70 0.173 0.180 0.185 A1 0 0.10 0.25 0 0.004 A2 2.59 2.69 2.79 0.102 0.106 b 0.77 - 0.90 0.030 b1 1.23 - 1.36 c 0.34 - 0.47 C1 1.22 - A SYMBOL INCH MIN NOM MAX MIN NOM MAX L 2.00 2.30 2.60 0.079 0.090 0.102 0.010 L3 1.17 1.27 1.40 0.046 0.050 0.055 0.110 L1 - - 1.70 - - 0.067 - 0.035 L4 0.048 - 0.052 L2 0.013 - 0.019 θ 0° - 8° 0° - 8° 1.32 0.048 - 0.052 θ1 5° 7° 9° 5° 7° 9° 0.25BSC 0.01BSC 2.50REF. 0.098REF. D 8.60 8.70 8.80 0.338 0.343 0.346 θ2 1° 3° 5° 1° 3° 5° E 10.00 10.16 10.26 0.394 0.4 0.404 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Øp1 1.40 1.50 1.60 0.055 0.059 0.063 e H 2.54BSC 14.70 15.10 0.1BSC 15.50 0.579 0.594 0.610 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. D– JAN., 2010 8 www.ruichips.com RU190N10S Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. D– JAN., 2010 9 www.ruichips.com