RU60C20R5

RU60C20R5
Complementary Advanced Power MOSFET
Features
Pin Description
• N-Channel
60V/20A,
RDS (ON) =30mΩ(Typ.) @ VGS=10V
D1/D2
• P-Channel
-60V/-15A,
RDS (ON) =110mΩ (Typ
(Typ.)) @ VGS=-10V
= 10V
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
S2
G2
G1
S1
TO220-5
D2/D1
Applications
pp
• Power Management
G2
G1
S2
S1
Complementary MOSFET
Absolute Maximum Ratings
Parameter
Symbol
N-Channel P-Channel
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
g
60
-60
VGSS
Gate-Source Voltage
±16
±16
Maximum Junction Temperature
175
175
°C
-55 to 175
-55 to 175
°C
TC=25°C
20
-15
A
TC=25°C
80
-60
A
TC=25°C
20
-15
TC=100°C
16
-10
TC=25°C
50
50
TC=100°C
25
25
3
3
°C/W
62.5
62.5
°C/W
42
72
mJ
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
ID
②
Continuous Drain Current(VGS=±10V)
PD
Maximum Power Dissipation
IDP
RJC
Thermal Resistance-Junction to Case
RJA
Thermal Resistance-Junction to Ambient
A
W
Drain-Source Avalanche Ratings
③
EAS
Avalanche
a a c e Energy,
e gy, S
Single
g e Pulsed
u sed
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
1
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RU60C20R5
Electrical
El t i l Characteristics
Ch
t i ti (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
RU60C20R5
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source
S
Breakdown Voltage
g
VGS=0V, IDS=250µA
N
60
VGS=0V,
0V IDS=-250µA
250 A
P
-60
VDS=60V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
VDS=-60V, VGS=0V
TJ=125°C
VGS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
④
RDS(ON)
Drain-Source On-state Resistance
V
1
N
30
-1
P
µA
-30
VGS, IDS=250µA
250 A
VDS=V
N
2
4
VDS=VGS, IDS=-250µA
P
-2
-4
VGS=±16V, VDS=0V
N
±10
VGS=±16V, VDS=0V
P
±10
VGS=10V, IDS=10A
N
30
50
VGS=-10V,
10V IDS=-8A
8A
P
110
120
ISD=20A, VGS=0V
N
1.2
ISD=-15A, VGS=0V
P
-1.2
V
µA
mΩ
Diode Characteristics
④
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
N-Channel
ISD=20A, dlSD/dt=100A/µs
N
32
P
52
Qrr
Reverse Recovery Charge
P-Channel
ISD=-15A, dlSD/dt=100A/µs
N
63
P
75
N
1.8
P
12
N-Channel
VGS=0V,VDS=30V,
Frequency=1.0MHz
N
1340
P
910
N
285
P-Channel
VGS=0V,V
=0V VDS=-30V,
=-30V
Frequency=1.0MHz
P
625
N
90
P
170
V
ns
nC
⑤
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
VGS=0V,V
=0V VDS=0V,F=1MHz
=0V F=1MHz
2
Ω
pF
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RU60C20R5
Electrical
El t i l Characteristics
Ch
t i ti (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
RU60C20R5
Test Condition
Min.
Typ.
Max.
Unit
⑤
Dynamic Characteristics
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
tf
Turn-off Delay Time
12
P
N-Channel
VDD=30V, RL=1.5Ω,IDS=20A,
N
VGEN=10V, RG=6Ω
P
P-Channel
N
VDD=-30V, RL=2Ω,IDS=-15A,
P
VGEN= -10V, RG=6Ω
16
15
24
28
ns
35
N
15
P
20
N-Channel
VDS=48V, VGS=10V,
IDS=20A
N
53
P
32
N
8
P-Channel
VDS=-48V, VGS= -10V,
IDS=-15A
P
5
N
27
P
11
Turn-off Fall Time
Gate Charge Characteristics
⑤
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
N
nC
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③Limited by TJmax, N-Channel:IAS =13A, VDD =48V, RG = 50Ω,P-Channel: IAS =-17A, VDD =-48V,
RG = 50Ω,Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
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RU60C20R5
Ordering
O d i and
d Marking
M ki Information
I f
ti
Device
Marking
Package
RU60C20R5
RU60C20R5
TO220-5
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
Packaging Quantity Reel Size Tape width
Tube
4
50
-
-
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RU60C20R5
Typical
Characteristics(N-Channel)
T i l Ch
t i ti (N Ch
l)
Power Dissipation
Drain Current
25
50
20
ID - Drain Curre
ent (A)
PD - Powe
er (W)
60
40
15
30
10
20
10
5
VGS=10V
0
0
0
25
50
75
100
125
150
25
175
50
Tj - Junction Temperature (°C)
10µs
100µs
1ms
10ms
DC
1
0.1
0.01
TC=25°C
0.01
125
150
175
Drain Current
200
RDS(ON) - On - Resistan
nce (mΩ)
10
100
Ids=10A
150
RDS(ON) limite
ed
ID - Drain Current (A
A)
Safe Operation Area
100
75
Tj - Junction Temperature (°C)
0.1
1
10
100
50
0
0
100
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Therrmal Response (°C/W
W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single
g Pulse
0.01
RθJC=3°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
5
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RU60C20R5
Typical
Characteristics(N-Channel)
T i l Ch
t i ti (N Ch
l)
Output Characteristics
8V
80
10V
6V
60
5V
40
20
3V
0
0
1
2
3
Drain-Source On Resistance
100
RDS(ON) - On Resista
ance (mΩ)
ID - Drain Cu
urrent (A)
100
4
80
60
10V
40
20
0
5
0
5
10
VDS - Drain-Source Voltage (V)
2.0
Drain-Source On Resistance
1.5
1.0
TJ=25°C
( )
Rds(on)=30mΩ
-25
0
25
50
75
100
125
TJ=175°C
150
TJ=25°C
1
0.1
0.2
175
0.4
Capacitance
VGS - G
Gate-Source Voltage
e (V)
C - Capacitance (pF
F)
Frequency=1 0MHz
Frequency=1.0MHz
2000
Ciss
1000
Coss
Crss
0
1
10
100
1
1.2
1.4
10
VDS 48V
VDS=48V
IDS=20A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
0.8
Gate Charge
2500
500
0.6
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
1500
30
10
0.0
-50
25
Source-Drain Diode Forward
100
VGS=10V
ID=10A
0.5
20
ID - Drain Current (A)
IS - Source Currentt (A)
No
ormalized On Resisttance
2.5
15
20
40
60
QG - Gate Charge (nC)
6
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RU60C20R5
Typical
Characteristics(P-Channel)
T i l Ch
t i ti (P Ch
l)
Power Dissipation
Drain Current
16
14
50
-ID - Drain Curre
ent (A)
PD - Powe
er (W)
60
12
40
10
30
20
10
8
6
4
2
0
0
0
25
50
75
100
125
150
VGS=-10V
25
175
50
TJ - Junction Temperature (°C)
10µs
100µs
1ms
10ms
1
DC
0.1
0.01
150
175
Ids=-8A
0.1
1
300
200
100
TC=25°C
0.01
125
Drain Current
500
RDS(ON) - On - Resistan
nce (mΩ)
10
100
400
RDS(ON) lim
mited
-IID - Drain Current (A
A)
Safe Operation Area
100
75
TJ - Junction Temperature (°C)
10
0
0
100
1
2
3
4
5
6
7
8
9
10
-VGS - Gate-Source Voltage (V)
-VDS - Drain-Source Voltage (V)
ZthJC - Therrmal Response (°C/W
W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single Pulse
0.01
RθJC=3°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2013
7
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RU60C20R5
Typical
Characteristics(P-Channel)
T i l Ch
t i ti (P Ch
l)
Output Characteristics
-8V
-10V
50
Drain-Source On Resistance
500
RDS(ON) - On Resista
ance (mΩ)
-ID - Drain Cu
urrent (A)
60
400
-6V
40
300
30
-5V
200
20
10
100
-3V
0
0
1
2
-10V
3
4
0
5
0
5
10
-VDS - Drain-Source Voltage (V)
2.0
Drain-Source On Resistance
1.5
1.0
TJ=25°C
( )
Rds(on)=110mΩ
-25
0
25
50
75
100
125
150
TJ=175°C
10
TJ=25°C
1
0.1
0.0
-50
0.2
175
0.4
Capacitance
-VGS - G
Gate-Source Voltage
e (V)
C - Capacitance (pF
F)
Frequency=1 0MHz
Frequency=1.0MHz
1200
Ciss
900
600
Coss
300
Crss
10
100
-VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2013
0.8
1
1.2
1.4
Gate Charge
1500
1
0.6
-VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
0
25
Source-Drain Diode Forward
100
VGS=-10V
ID=-8A
0.5
20
-ID - Drain Current (A)
-IS - Source Currentt (A)
No
ormalized On Resisttance
2.5
15
8
10
VDS 48V
VDS=-48V
IDS=-15A
9
8
7
6
5
4
3
2
1
0
0
10
20
30
40
QG - Gate Charge (nC)
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RU60C20R5
Package
Information
P k
I f
ti
E
A
TO220-5
1
A
Q
P
1
H
θ1
P
E
D
3
L
2
L
D
θ
θ1
2
P
1
1
PIN #1 IDD
1脚标记
2
A
b
L
C
e
3
θ
1
E
SYMBOL
A
A1
A2
b
c
D
D1
E
E1
e
H1
MM
MIN
4.45
1.22
0.76
0.33
25.78
8.38
10.13
10.03
1.57
6.10
NOM
4.58
1.27
2.67
0.89
0.49
26.04
8.64
10.26
10.29
1.70
6.35
INCH
MAX
4.70
1.32
MIN
0.175
0.048
1.02
0.64
26.29
8.89
10.39
10.54
1.83
6.60
0.030
0.013
1.015
0.330
0.399
0.395
0.062
0.240
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
NOM
0.180
0.050
0.105
0.035
0.019
1.025
0.340
0.404
0.405
0.067
0.250
MAX
0.185
0.052
0.040
0.025
1.035
0.350
0.409
0.415
0.072
0.260
9
SYMBOL
L
L2
L3
Φp
Φp1
Q
MM
MIN
13.34
3.78
1.07
2.54
θ1
θ2
θ3
DEP
0.10
NOM
13.72
10.77REF
3.40REF
3.84
1.20
2.80
7°
3°
3°
0.18
INCH
MAX
14.10
MIN
0.525
3.89
1.32
3.05
0.149
0.042
0.100
0.25
0.004
NOM
0.540
0.424REF
0.134REF
0.151
0.047
0.110
7°
3°
3°
0.007
MAX
0.555
0.153
0.052
0.120
0.010
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RU60C20R5
Customer
Service
C t
S
i
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
@
p
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
10
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