RU6H4R

RU6H4R
N-Channel Advanced Power MOSFET
Features
Pin Description
• 600V/4A,
RDS (ON) =1800mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Fast Switching
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
G
D
S
TO220
D
Applications
• High efficiency switch mode power supplies
• Lighting
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
4
A
TC=25°C
16
A
TC=25°C
4
TC=100°C
2.5
TC=25°C
83
TC=100°C
33
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=10V)
IDP
ID
PD
Maximum Power Dissipation
A
W
RθJC
Thermal Resistance-Junction to Case
1.5
°C/W
RθJA
Thermal Resistance-Junction to Ambient
62.5
°C/W
88
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
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RU6H4R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU6H4R
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
600
V
VDS=600V, VGS=0V
1
TJ=125°C
VGS(th)
IGSS
④
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±30V, VDS=0V
Drain-Source On-state Resistance VGS=10V, IDS=2A
µA
30
2
1800
4
V
±100
nA
2200
mΩ
1.3
V
Diode Characteristics
VSD
④
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=4A, VGS=0V
ISD=4A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=300V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
µC
5
Ω
540
pF
80
25
VDD=300V, RL=75Ω,
IDS=4A, VGEN=10V,
RG=25Ω
75
ns
45
65
⑤
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
1.6
9
Turn-off Fall Time
Gate Charge Characteristics
Qg
ns
⑤
RG
tf
280
15
VDS=480V, VGS=10V,
IDS=4A
nC
3.5
7
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③Limited by TJmax, IAS =4.2A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
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RU6H4R
Ordering and Marking Information
Device
Marking
Package
RU6H4R
RU6H4R
TO220
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
Packaging Quantity Reel Size Tape width
Tube
3
50
-
-
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℃
RU6H4R
Typical Characteristics
Power Dissipation
90
Drain Current
5
ID - Drain Current (A)
PD - Power (W)
80
70
60
50
40
30
20
10
4
3
2
1
VGS=10V
0
0
0
25
50
75
100
125
150
25
175
50
125
150
175
RDS(ON) - On - Resistance (mΩ)
5000
10µs
100µs
1ms
10ms
RDS(ON) limited
ID - Drain Current (A)
1.00
100
Drain Current
Safe Operation Area
10.00
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
Ids=2A
4000
3000
2000
DC
0.10
1000
TC=25°C
0.01
0.1
1
0
10
100
0
1000
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single Pulse
0.01
RθJC=1.5°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
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RU6H4R
Typical Characteristics
Output Characteristics
10
RDS(ON) - On Resistance (mΩ)
10V
ID - Drain Current (A)
Drain-Source On Resistance
3000
8
8V
2400
6V
6
4
10V
1800
1200
5V
2
600
3V
0
0
2
4
6
8
0
10
0
5
VDS - Drain-Source Voltage (V)
Source-Drain Diode Forward
10.00
VGS=10V
ID=2A
2.0
IS - Source Current (A)
Normalized On Resistance
15
ID - Drain Current (A)
Drain-Source On Resistance
2.5
10
1.5
1.0
0.5
TJ=25°C
Rds(on)=1800m
Ω
0.0
TJ=150°C
1.00
TJ=25°C
0.10
0.01
0.2
-50
-25
0
25
50
75
100
125
150
0.4
Capacitance
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
Ciss
500
400
300
200
Coss
100
Crss
0
1
10
1
1.2
1.4
Gate Charge
800
600
0.8
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
700
0.6
100
1000
10
VDS=480V
IDS=4A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
5
10
15
20
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
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RU6H4R
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
6
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RU6H4R
Package Information
TO220
E
A
E1
A1
p
Q
H1
L2
θ1
P1
D
DEP
D1
θ2
θ1
L1
b2
L
b
C
A2
e
e1
E2
SYMBOL
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
E2
MM
MIN
4.40
1.20
2.23
0.75
1.17
0.40
15.40
8.96
0.05
9.66
*
9.80
NOM
4.55
1.30
2.38
0.80
1.28
0.50
15.60
9.21
0.13
9.97
8.70
10.00
INCH
MAX
4.70
1.40
2.53
0.85
1.39
0.60
15.80
9.46
0.20
10.28
*
10.20
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
MIN
0.173
0.047
0.088
0.030
0.046
0.016
0.606
0.353
0.002
0.380
*
0.386
NOM
0.179
0.051
0.094
0.031
0.050
0.020
0.614
0.363
0.005
0.393
0.343
0.394
MAX
0.185
0.055
0.100
0.033
0.055
0.024
0.622
0.372
0.008
0.405
*
0.402
7
SYMBOL
Φp1
e
e1
H1
L
L1
L2
Φp
Q
θ1
θ2
MM
MIN
1.40
6.40
12.70
*
3.50
2.73
5°
1°
NOM
1.50
2.54 BSC
5.08 BSC
6.50
13.18
*
2.50 REF
3.60
2.80
7°
3°
INCH
MAX
1.60
MIN
0.055
6.60
13.65
3.95
0.252
0.500
*
3.70
2.87
9°
5°
0.138
0.107
5°
1°
NOM
0.059
0.10 BSC
0.20 BSC
0.256
0.519
*
0.098 REF
0.142
0.110
7°
3°
MAX
0.063
0.260
0.537
0.156
0.146
0.113
9°
5°
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RU6H4R
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
8
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