GSD2004W-V 225mA Surface Mount Small Signal Fast Switching Diode Features · Silicon Epitaxial Planar Diode C H · Fast switching diode,especially suited for applications requiring high voltage capa- bility A B · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC K M L Mechanical Data · Case: SOD123 plastic case SOD-123 Dim Min Max A 0.55 Typ B 1.40 1.70 C 3.55 3.85 H 2.55 2.85 J 0.00 0.10 K 1.00 1.35 L 0.25 0.40 M 0.10 0.15 0 8° α All Dimensions in mm · Weight: approx. 9.3 mg · Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Maximum Ratings and Electrical Characteristics Parameter Test condition @ TA = 25°C unless otherwise specified Symbol Value Unit VR 240 V VRRM 300 V Continuous reverse voltage Peak repetitive reverse voltage Forward current (continuous) IF 225 mA IFRM 625 mA tp = 1 μs IFSM 4.0 A tp = 1 s IFSM 1.0 A Ptot 350 mW Peak repetitive forward current Non-repetitive peak forward current Power dissipation Symbol Min Reverse breakdown voltage Parameter IR = 100 μA Test condition VBR 300 Leakage current VR = 240 V IR VR = 240 V, Tj = 150 °C IR IF = 20 mA VF IF = 100 mA Diode capacitance VF = VR = 0, f = 1 MHz Reverse recovery time IF = IR = 30 mA, Irr = 3.0 mA, RL = 100 Ω Forward voltage 1 of 1 Typ. Max Unit 100 nA 100 μA V 0.83 0.87 V VF 1.00 V Ctot 5.0 pF trr 50 ns