MITSUBISHI RD01MUS1_10

Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
RD01MUS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
4.4+/-0.1
TYPE NAME
LOT No.
0.8 MIN 2.5+/-0.1
FEATURES
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
APPLICATION
1.5+/-0.1
1.6+/-0.1
φ
1
2
1.5+/-0.1
3.9+/-0.3
DESCRIPTION
1
0.
3
0.4 +0.03
-0.05
1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.1 MAX
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Channel Temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
30
V
Vds=0V
+/-10
V
Tc=25°C
3.6
W
Zg=Zl=50Ω
100
mW
600
mA
°C
150
-40 to +125 °C
°C/W
Junction to case
34.5
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
CONDITIONS
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=7.2V, Pin=30mW
f=520MHz,Idq=100mA
MIN
1.3
0.8
50
LIMITS
TYP
1.8
1.4
65
UNIT
MAX
50
1
2.3
-
uA
uA
V
W
%
Note: Above parameters, ratings, limits and conditions are subject to change.
RD01MUS1
17 Aug 2010
1/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
1.0
Ta=+25°C
Vds=10V
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
0.8
3
On PCB(*1) with Heat-sink
Ids(A)
CHANNEL DISSIPATION Pch(W)
...
4
2
1
On PCB(*1)
0.6
0.4
0.2
0.0
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
0
200
Vds-Ids CHARACTERISTICS
Ta=+25°C
2
Vgs=10V
Vgs=9V
20
Vgs=8V
18
Vgs=7V
16
Ciss(pF)
Ids(A)
1.5
Vgs=5V
1
8
6
4
2
Vgs=3V
0
0
0
10
Vds VS. Coss CHARACTERISTICS
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
20
4
18
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
16
3
14
12
Crss(pF)
Coss(pF)
Ta=+25°C
f=1MHz
10
0.5
8
5
12
Vgs=4V
4
6
Vds(V)
4
14
Vgs=6V
2
2
3
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
2.5
0
1
10
8
6
2
1
4
2
0
0
0
5
10
Vds(V)
15
0
20
RD01MUS1
5
10
Vds(V)
15
20
17 Aug 2010
2/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
30
90
Gp
25
1.6
80
70
15
60
10
50
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=100mA
5
0
-10
ηd(%)
ηd
20
10
80
1.4
ηd
1.2
60
1.0
0.8
40
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=100mA
0.6
Idd
0.4
40
20
0.2
0.0
30
0
100
Po
1.8
Pout(W) , Idd(A)
Po(dBm) , Gp(dB) , Idd(A)
2.0
100
Po
ηd(%)
35
0
0
20
Pin(dBm)
20
40
60
Pin(mW)
Vdd-Po CHARACTERISTICS
0.8
4.0
Ta=25°C
f=520MHz
Pin=30mW
Idq=100mA
Zg=ZI=50 ohm
3.0
Po
0.6
2.5
Po(W)
0.7
0.5
Idd
2.0
0.4
1.5
0.3
1.0
0.2
0.5
0.1
Idd(A)
3.5
0.0
0.0
4
6
8
10
Vdd(V)
12
14
RD01MUS1
17 Aug 2010
3/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
C1
11m m
10uF,50V
C2
18m m
5m m
R D01MUS1
4.7kO HM
4m m
30m m
6.5m m
L1
4m m 5.5m m
13m m
17.5m m 25.5m m 4m m
R F-O UT
R F-IN
3m m
62pF
68pF
68O HM
3pF
24pF
62pF
10pF
240pF
L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D
Note:Board m aterial-glass epoxi substrate
C 1,C2: 1000pF,0.022uF in parallel
Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
520MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W
Zin* =3.11+j11.56
Zout*=11.64+j4.74
520MHz Zin*
520MHz Zout*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input
outputimpedance
impedance
RD01MUS1
17 Aug 2010
4/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq.
[MHz]
100
150
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.927
0.875
0.833
0.811
0.798
0.791
0.790
0.788
0.794
0.796
0.798
0.801
0.807
0.813
0.817
0.825
0.831
0.837
0.845
0.851
0.857
0.862
(ang)
-77.0
-101.2
-117.9
-129.5
-138.0
-144.5
-149.7
-154.1
-158.0
-159.2
-161.2
-164.2
-167.0
-169.3
-171.6
-174.0
-176.0
-178.0
-179.9
178.2
176.5
174.7
S21
(mag)
(ang)
19.536
132.3
15.657
116.5
12.662
105.0
10.427
96.2
8.814
89.3
7.548
83.3
6.541
78.2
5.789
73.5
5.106
69.0
4.876
67.5
4.576
65.2
4.120
61.3
3.714
58.0
3.389
54.7
3.092
51.3
2.820
48.6
2.616
46.0
2.401
42.8
2.207
40.9
2.076
38.4
1.912
35.5
1.773
34.0
S12
(mag)
0.043
0.050
0.053
0.054
0.053
0.052
0.051
0.049
0.047
0.046
0.045
0.043
0.041
0.039
0.036
0.033
0.031
0.028
0.026
0.023
0.021
0.018
S22
(ang)
41.3
26.5
16.1
8.4
2.6
-2.4
-6.6
-9.9
-13.3
-14.1
-15.8
-18.5
-21.0
-22.3
-24.9
-25.7
-26.8
-27.8
-27.3
-27.0
-26.3
-23.8
(mag)
0.772
0.687
0.630
0.600
0.588
0.583
0.590
0.597
0.608
0.615
0.622
0.636
0.650
0.666
0.680
0.694
0.711
0.723
0.734
0.749
0.760
0.771
(ang)
-63.0
-83.1
-97.3
-107.1
-114.4
-120.1
-124.6
-128.4
-131.7
-133.1
-134.8
-137.3
-140.1
-142.4
-144.6
-146.8
-148.8
-150.9
-152.9
-154.5
-156.3
-158.2
RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq.
[MHz]
100
150
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.945
0.896
0.856
0.833
0.819
0.810
0.806
0.804
0.808
0.809
0.812
0.813
0.819
0.824
0.827
0.834
0.841
0.845
0.852
0.857
0.864
0.868
(ang)
-72.3
-96.7
-113.9
-126.2
-135.1
-141.9
-147.7
-152.2
-156.4
-157.8
-159.9
-163.0
-166.0
-168.6
-171.0
-173.3
-175.5
-177.4
-179.4
178.6
176.9
175.0
S21
(mag)
(ang)
19.517
135.2
15.937
119.5
13.050
107.7
10.830
98.6
9.194
91.6
7.890
85.3
6.868
80.1
6.084
75.3
5.382
70.7
5.139
69.1
4.831
66.7
4.356
62.7
3.931
59.3
3.597
56.0
3.283
52.4
2.991
49.8
2.779
47.1
2.554
43.8
2.350
41.9
2.209
39.4
2.035
36.3
1.889
34.8
RD01MUS1
S12
(mag)
0.039
0.046
0.049
0.050
0.050
0.049
0.047
0.046
0.044
0.044
0.042
0.040
0.038
0.036
0.034
0.031
0.029
0.026
0.024
0.022
0.019
0.017
S22
(ang)
44.5
29.2
18.5
11.2
5.0
-0.3
-4.2
-7.7
-11.0
-12.4
-13.7
-16.2
-18.7
-20.8
-22.3
-23.7
-24.6
-25.9
-25.4
-24.3
-23.5
-20.1
(mag)
0.742
0.665
0.612
0.581
0.568
0.565
0.571
0.580
0.591
0.596
0.605
0.618
0.633
0.649
0.664
0.678
0.695
0.708
0.720
0.736
0.747
0.759
(ang)
-57.4
-76.6
-90.6
-100.4
-107.8
-113.8
-118.5
-122.3
-126.1
-127.5
-129.4
-132.2
-135.1
-137.6
-140.1
-142.5
-144.5
-146.7
-148.9
-150.7
-152.4
-154.6
17 Aug 2010
5/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD01MUS1
Silicon MOSFET Power Transistor 520MHz,1W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to arise
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products are
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters for
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact to
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
RD01MUS1
17 Aug 2010
6/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD01MUS1
Silicon MOSFET Power Transistor 520MHz,1W
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product
best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other
rights, belonging to Mitsubishi Electric Corporation or a third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating
in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these
materials.
- All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents
information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric
Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information
before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical
errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and
algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the
information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss
resulting from the information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific
purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is
prohibited.
- Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details
on these materials or the products contained therein.
RD01MUS1
17 Aug 2010
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