Datasheet - NXP Semiconductors

DISCRETE SEMICONDUCTORS
DATA SHEET
BYV29 series
Rectifier diodes
ultrafast
Product specification
September 1998
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
BYV29 series
SYMBOL
QUICK REFERENCE DATA
VR = 300 V/ 400 V/ 500 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
k
1
VF ≤ 1.03 V
a
2
IF(AV) = 9 A
trr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV29 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
PINNING
PIN
SOD59 (TO220AC)
DESCRIPTION
1
cathode
2
anode
tab
tab
cathode
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
IF(AV)
Average forward current1
square wave; δ = 0.5;
Tmb ≤ 123 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
Tmb ≤ 123 ˚C
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
Storage temperature
Operating junction temperature
-
9
A
-
18
A
-
100
110
A
A
-40
-
150
150
˚C
˚C
BYV29
IFRM
IFSM
Tstg
Tj
MAX.
-300
300
300
300
-400
400
400
400
UNIT
-500
500
500
500
V
V
V
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
CONDITIONS
in free air.
MIN.
TYP.
MAX.
UNIT
-
-
2.5
K/W
-
60
-
K/W
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29 series
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qs
Reverse recovery charge
trr
Reverse recovery time
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRRM
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
IF = 10 A; dIF/dt = 10 A/µs
I
dI
F
15
F
TYP.
MAX.
UNIT
-
0.90
1.05
1.20
2.0
0.1
40
1.03
1.25
1.40
50
0.35
60
V
V
V
µA
mA
nC
-
50
60
ns
-
4.0
5.5
A
-
2.5
-
V
Tmb(max) / C
BYV29
PF / W
Vo = 0.8900 V
Rs = 0.0190 Ohms
dt
t
MIN.
112.5
D = 1.0
0.5
rr
125
10
0.2
time
0.1
5
Q
I
I
R
s
10%
D=
0
0
5
137.5
150
15
10
IF(AV) / A
tp
T
t
T
rrm
Fig.1. Definition of trr, Qs and Irrm
I
tp
I
100%
Fig.3. Maximum forward dissipation PF = f(IF(AV));
square wave where IF(AV) =IF(RMS) x √D.
12
F
BYV29
PF / W
Tmb(max) / C
120
a = 1.57
Vo = 0.89V
Rs = 0.019 Ohms
10
125
1.9
2.2
8
time
VF
V
fr
VF
6
135
4
140
2
145
0
time
0
2
4
IF(AV) / A
6
8
150
10
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Fig.2. Definition of Vfr
September 1998
130
2.8
4
2
Rev 1.300
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29 series
trr / ns
1000
BYW29
IF / A
30
Tj=150 C
IF=10 A
Tj=25 C
100
20
1A
typ
10
max
10
Tj = 25 C
Tj = 100C
1
1
0
100
10
dIF/dt (A/us)
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
10
0.5
0
1.5
1
VF / V
2
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Irrm / A
1000
Qs / nC
IF=10A
1
IF = 10 A
100
IF=1A
2A
0.1
10
Tj = 25 C
Tj = 100C
0.01
1
10
-dIF/dt (A/us)
1
100
1.0
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.
10
-dIF/dt (A/us)
100
Fig.8. Maximum Qs at Tj = 25˚C
10
Transient thermal impedance, Zth j-mb (K/W)
1
0.1
PD
0.01
0.001
1us
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29
10s
Fig.9. Transient thermal impedance Zth j-mb= f(tp)
September 1998
3
Rev 1.300
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1
(2x)
2
0,9 max (2x)
5,08
0,6
2,4
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.300
NXP Semiconductors
Legal information
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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