RT8106/A - Richtek

RT8106/A
5V/12V Synchronous Buck PWM DC-DC Controller
General Description
Features
The RT8106/A is a DC/DC synchronous buck PWM
controller with embedded driver support up to 12V+12V
boot-strapped voltage for high efficiency power driving. The
part integrates full functions of voltage regulation, power
monitoring and protection into a single small footprint
WDFN-10L 3x3 (Exposed Pad) package.
z
Single 5 to 12V Bias Supply
z
Drive All Low Cost N-MOSFETs
Support High Current Application up to 30A
High-Gain Voltage Mode PWM Control
300kHz/600kHz Fixed Frequency Oscillator
Fast Transient Response :
` High-Speed EA Amplifier
` 0 to 85% Duty Ratio
` External Compensation in The Control Loop
Internal Soft-Start
Adaptive Non-Overlapping Gate Driver
Over Current Fault Monitor on low side MOSFET
RoHS Compliant and 100% Lead (Pb)-Free
z
z
z
z
z
z
z
Ordering Information
RT8106/A
Package Type
QW : WDFN-10L 3x3 (W-Type)
Lead Plating System
P : Pb Free
G : Green (Halogen Free and Pb Free)
Z : ECO (Ecological Element with
Halogen Free and Pb free)
Applications
z
z
z
z
Graphic Card
Motherboard, Desktop Servers
IA and Telecom Equipment
General High Power DC/DC Regulator
Pin Configurations
(TOP VIEW)
600kHz
300kHz
BOOT
LX
UGATE
LGATE
GND
Note :
Richtek products are :
`
1
2
3
4
5
GND
11
10
9
8
7
9
The RT8106/A adopts a high-gain voltage mode PWM
control for simple application design. An internal 0.8V
reference allows the output voltage to be precisely
regulated for low voltage requirement. Based on all
RT8106/A features, the part provides an optimum
compromise between efficiency, total B.O.M. count, and cost.
z
PGOOD
VOS
FB
COMP/EN
VCC
WDFN-10L 3x3
RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
`
Suitable for use in SnPb or Pb-free soldering processes.
Marking Information
RT8106GQW
DY=YM
DNN
RT8106AGQW
DY= : Product Code
YMDNN : Date Code
DS8106/A-04 April 2011
EP= : Product Code
EP=YM
DNN
YMDNN : Date Code
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1
RT8106/A
RT8106ZQW
RT8106AZQW
DY : Product Code
EP : Product Code
YMDNN : Date Code
DY YM
DNN
YMDNN : Date Code
EP YM
DNN
Typical Application Circuit
VGD
6
VCC
CBP
10
PGOOD
7
RT8106/A
BOOT 1
VCC
PGOOD
D1
RBOOT
Rf
Q2
GND
5, Exposed Pad (11)
R7
C7
RL
RFB
RB
CB
FB 8
9
VOS
Cf
L1
2
LGATE 4
CP
VOUT
Q1
ROCSET
EN
C4
CBOOT
RUGATE
UGATE 3
LX
COMP/EN
VIN
RFB
COUT
ROFFSET
ROFFSET
Functional Pin Description
Pin No.
Pin Name
Pin Function
This pin is boot-strapped by external capacitor and is applied for the embedded
1
BOOT
2
LX
Phase node of PWM.
3
UGATE
High Side gate drive.
4
LGATE
Low Side gate drive. It also acts as OC setup pin by adjusting a resistor
connecting to GND.
5,
11 (Exposed Pad)
GND
6
VCC
7
COMP/EN
8
FB
9
VOS
10
PGOOD
High Side gate driver power.
Ground. The exposed pad must be soldered to a large PCB and connected to
GND for maximum power dissipation.
VCC is generally applied for bias power for IC logics and gate driver control. To
connect a 1μF bypass capacitor to GND is recommended.
Compensation pin of PWM and Output of the PWM error amplifier. Connect
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2
compensation network between this pin and FB. This pin is also applied as
Enable pin.
PWM Feedback. The output feedback of PWM. The pin is applied for voltage
regulation.
The pin is scaled to be 0.8v and provides under voltage protection, over voltage
protection and PGOOD function.
This pin is an open drain driver and Indicates PWM output regulated in +/-10%.
DS8106/A-04 April 2011
RT8106/A
Function Block Diagram
COMP/EN
FB
BOOT
UGATE
LX
-
0.8V
LGATE
-1
+
LX
UV_level
VOS
IOC
+
+
PGH_level
-
OC
LGATE
UV
-
OV_level
+
+
OV
Control
Logic
EN
PGOOD
+
-
PGL_level
+
DS8106/A-04 April 2011
GND
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RT8106/A
Absolute Maximum Ratings
(Note 1)
Supply Voltage, VCC -------------------------------------------------------------------------------------- 15V
BOOT to LX ------------------------------------------------------------------------------------------------- 15V
z Input, Output or I/O Voltage ----------------------------------------------------------------------------- (GND−0.3V) to 7V
z LX to GND
DC ------------------------------------------------------------------------------------------------------------- −5V to 18V
< 200ns ------------------------------------------------------------------------------------------------------ −10V to 30V
z BOOT to GND
DC ------------------------------------------------------------------------------------------------------------- −0.3V to 30V
< 200ns ------------------------------------------------------------------------------------------------------ −0.3V to 42V
z UGATE ------------------------------------------------------------------------------------------------------- (VLX − 0.3V) to (VBOOT + 0.3V)
< 200ns ------------------------------------------------------------------------------------------------------ (VLX − 5V) to (VBOOT + 5V)
z LGATE ------------------------------------------------------------------------------------------------------- (GND − 0.3V) to( VCC + 0.3V)
< 200ns ------------------------------------------------------------------------------------------------------ (GND − 5V) to (VCC + 5V)
z Power Dissipation, PD @ TA = 25°C (Note 2)
WDFN-10L 3x3 --------------------------------------------------------------------------------------------- 1.429W
z Package Thermal Resistance
WDFN-10L 3x3, θJA --------------------------------------------------------------------------------------- 70°C/W
WDFN-10L 3x3, θJC --------------------------------------------------------------------------------------- 8.2°C/W
z Junction Temperature ------------------------------------------------------------------------------------- 150°C
z Lead Temperature (Soldering, 10 sec.) --------------------------------------------------------------- 260°C
z Storage Temperature Range ---------------------------------------------------------------------------- −65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Mode) ------------------------------------------------------------------------------ 2kV
MM (Machine Mode) -------------------------------------------------------------------------------------- 200V
z
z
Recommended Operating Conditions
z
z
z
(Note 4)
Supply Voltage, VCC -------------------------------------------------------------------------------------- 12V ± 10%, 5V ± 5%
Junction Temperature Range ---------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range ---------------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VCC = 12V, TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
4.75
12
13.2
V
--
4
--
mA
3.9
4.1
4.35
V
--
0.3
--
V
1.5
2.7
4
ms
--
0.8
--
V
Output Voltage Accuracy
−0.8
--
0.8
%
Thermal Shutdown Limit
--
140
--
°C
General
Supply Input Voltage
VCC
Nominal Supply Current
I CC
No Load for UGATE/ LGATE
VCC POR Threshold
VPOR
VCC Rising
VCC POR Hysteresis
VPOR_Hys
Soft-Start Interval
TSS
Reference Voltage
VREF
FB rising from 10% to 90%
To be continued
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DS8106/A-04 April 2011
RT8106/A
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
PWM Controller
EA Open Loop Gain
GEA
--
80
--
dB
EA Bandwidth
BW
--
15
--
MHz
RT8106
--
85
--
%
RT8106A
--
80
--
%
Maximum Duty
UGATE Drive Source
IUGATEsr
1.5
--
--
A
LGATE Drive Source
ILGATEsr
1.5
--
--
A
UGATE Drive Sink
RUGATEsk
--
1.1
--
Ω
LGATE Drive Sink
RLGATEsk
--
0.65
--
Ω
--
1.6
--
V
--
1.2
--
V
270
300
330
540
600
660
Ramp Valley
ΔVOSC
Ramp Amplitude
PWM Frequency
RT8106
RT8106A
f OSC
kHz
Over Voltage Threshold
OVP
Relative to VOS
115
125
135
%
Under Voltage Threshold
UVP
Relative to VOS
65
75
80
%
PGOOD Threshold
PGOOD
Relative to VOS
90
--
110
%
OC Current Source
IOC
9
10
11
μA
OC Preset Trigger Voltage
VOC_Preset
--
0.55
--
V
Disable Threshold
VDIS
--
--
0.5
V
Relative to VOS Rising
85
--
95
%
Relative to VOS Falling
105
--
115
%
--
--
0.4
V
PGOOD Active Threshold
PGOOD Low Level
ROCSET is not Connected
VOL_PGOOD Sink 4mA
Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at T A = 25°C on a low effective thermal conductivity test board of
JEDEC 51-3 thermal measurement standard. The case point of θJC is on the expose pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
DS8106/A-04 April 2011
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5
RT8106/A
Typical Operating Characteristics
Switching Frequency vs. Temperature
350
1.6060
340
Switching Frequency (kHz)1
Output Voltage (V)
Output Voltage vs. Temperature
1.6065
1.6055
1.6050
1.6045
1.6040
1.6035
1.6030
1.6025
1.6020
VIN = 12V, ILOAD = 0A
-20
0
20
40
330
320
310
300
290
280
270
260
VIN = 12V, VOUT = 1.6V, ILOAD = 0A
250
60
80
100
120
140
-20
0
Temperature (°C)
60
80
100
120
140
Load Transient Response
LGATE
(10V/Div)
LGATE
(10V/Div)
UGATE
(20V/Div)
UGATE
(20V/Div)
VOUT
(100mV/Div)
VOUT
(100mV/Div)
VIN = 12V, VOUT = 1.6V, ILOAD = 0A to 20A
40
Temperature (°C)
Load Transient Response
I LOAD
(10A/Div)
20
I LOAD
(10A/Div)
VIN = 12V, VOUT = 1.6V, ILOAD = 20A to 0A
Time (10μs/Div)
Time (10μs/Div)
Load Transient Response
Dead Time
Rising
UGATE
LGATE
(10V/Div)
UGATE-PHASE
UGATE
(20V/Div)
PHASE
VOUT
(100mV/Div)
I LOAD
(10A/Div)
(5V/Div)
LGATE
VIN = 12V, VOUT = 1.6V, ILOAD = 0A to 20A to 0A
Time (200μs/Div)
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VIN = 12V, VOUT = 1.6V, ILOAD = 5A
Time (25ns/Div)
DS8106/A-04 April 2011
RT8106/A
Dead Time
VIN = VCC Power On
Falling
UGATE
LGATE
(10V/Div)
PHASE
UGATE
(20V/Div)
UGATE-PHASE
(5V/Div)
LGATE
VIN = 12V, VOUT = 1.6V, ILOAD = 5A
V CC
(10V/Div)
VOUT
(2V/Div)
VCC = VIN = 12V, VOUT = 1.6V, ILOAD = 10A
Time (25ns/Div)
Time (2.5ms/Div)
VIN = VCC Power Off
COMP Enable Power On
LGATE
(10V/Div)
LGATE
(10V/Div)
UGATE
(20V/Div)
UGATE
(20V/Div)
V CC
(10V/Div)
VCOMP
(1V/Div)
VOUT
(2V/Div)
VOUT
(2V/Div)
VCC = VIN = 12V, VOUT = 1.6V, ILOAD = 10A
VIN = 12V, VOUT = 1.6V, ILOAD = 10A
Time (1ms/Div)
Time (1ms/Div)
Efficiency vs. Load Current
COMP Disable Power Off
95
90
LGATE
(10V/Div)
Efficiency (%)
85
UGATE
(20V/Div)
VCOMP
(1V/Div)
VOUT
(2V/Div)
80
75
70
65
60
55
VIN = 12V, VOUT = 1.6V, ILOAD = 10A
Time (1ms/Div)
VIN = VCC = 12V, VOUT = 1.6V, f = 300kHz
50
0
5
10
15
20
25
30
Load Current (A)
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RT8106/A
Application Information
Overview
The RT8106/A is a high efficiency synchronous buck PWM
controller that can generate adjustable DC output voltage.
This device is embedded with high current High Side and
Low Side MOSFET drivers, and many protection functions
(OCP, UVP, OVP) into a tiny package. Simple board
design and low BOM cost can be easily achieved by the
high integration feature to make this part to be an ideal
solution for general applications.
Chip Enable/Disable
Pull pin 7 (COMP/EN) to be lower than 0.5V can shut
down the device. This allows flexible power sequence
control for specified application. Setting free this pin can
enable the RT8106/A again.
Power On Reset (POR)
The RT8106/A automatically initializes upon applying of
input power (at the VCC) pin. The power on reset function
(POR) continually monitors the VCC supply voltage. The
POR threshold is typically 4.1V at VCC rising.
Input Power (Vin) Detection
The RT8106/A continuously generates a 10kHz pulse train
with 1us pulse width to turn on the upper MOSFET for
detecting the existence of VIN after VCC POR and Comp/
EN pin enabled. As shown in Figure 1. the LX pin voltage
is monitored during the detection period. If the LX pin
voltage exceeds 1.5V threshold for four times, the VIN
existence is recognized and the RT8106/A initiates its
soft start cycle.
LX
+
-
1.5V
UGATE
1st 2nd 3rd 4th LX
waveform
Internal Counter will count (V LX > 1.5V)
four times (rising & falling) to recognize
V IN is ready.
Figure 1. VIN Power Detection
Soft Start
A built-in soft-start is used to prevent surge current from
V IN to V OUT during power on. The soft-start (SS)
automatically begins once the existence of VIN is detected.
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The internal soft-start capacitor is charged and generates
a linear ramping voltage across the capacitor. This voltage
clamps the feedback voltage at the FB pin, causing PWM
pulse width increasing slowly to reduce the output surge
current. The soft-start cycle stops while the voltage across
SS capacitor is higher than the nominal feedback voltage
0.8V.
Output Voltage Setting
The RT8106/A can regulate an output voltage as low to as
0.8V and maintains it within ±0.8% accuracy. Higher output
voltage can be achieved by adding an offset resistor ROFFSET
between FB pin and GND. The steady state output voltage
will be set as the formula :
RFB ⎞
VOUT = VREF × ⎛⎜ 1+
⎟
⎝ ROFFSET ⎠
Under Voltage Protection (UVP)
The VOS pin voltage is monitored for under voltage
protection after soft-start completes. If the VOS voltage
drops to below UV threshold (typically 75% x VREF), the
UVP is triggered and the RT8106/A turns off High Side
and Low Side gate drivers. The RT8106/A will not be
released from this latch condition unless VCC POR is
recognized.
Over Voltage Protection (OVP)
The VOS pin is also acted as over voltage detection after
POR. If the VOS voltage rises above OVP threshold
(typically 125% x VREF), OVP is triggered. The RT8106/
A turns off High Side gatedriver and turns Low Side gate
drivers always on. The Low Side gate driver will not be
turned off until VOS falls below 0.4V. The RT8106/A will
not be released from this latch condition unless VCC POR
is recognized.
PGOOD
The RT8106/A will assert PGOOD signal after the softstart completes and the VOS voltage is within power good
range. If VOS voltage runs outside of the range, the
RT8106/A de-asserts the PGOOD signal but continues
switching and regulating. The PGOOD is an open drain
output pin and thus requires an external pull-up resistor.
DS8106/A-04 April 2011
RT8106/A
Over Current Protection
Feedback Compensation
While the High Side MOSFET is off and Low Side on, the
output current (I OUT) flowing through the Low Side
MOSFET results in a negative voltage drop (IOUT x
MOSFET RDS(ON)) between the LX pin and GND. The
RT8106/A senses IOUT by monitoring the LX pin voltage.
The maximum current is set by adjusting an external
resistor ROCSET connecting between LGATE and GND. The
OCP is triggered if the LX voltage is lower than the LGATE
voltage when low side MOSFET conducting. Because
there is an internal current source 10uA flowing from the
RT8106/A to the ROCSET, the maximum current (IMAX) can
be easily derived from below equation :
The RT8106/A is a voltage mode controller. The control
loop is a single voltage feedback path including a
compensator and a modulator as shown in Figure 3. The
modulator consists of the PWM comparator and power
stage. The PWM comparator compares error amplifier EA
output (COMP) with oscillator (OSC) sawtooth wave to
provide a pulse-width modulated (PWM) with an amplitude
of VIN at the LX node. The PWM wave is smoothed by the
output filter LOUT and COUT. The output voltage (VOUT) is
sensed and fed to the inverting input of the error amplifier.
IMAX × RDS(ON) = ROCSET × 10μ A
In case ROCSET is not connected, RT8106/A can detect
this condition and set the OC trigger voltage to a preset
value (typ. 0.55V).
When the OCP is triggered, the RT8106/A will turn off
both UGATE and LGATE drivers and latches in the
condition unless VCC POR is recognized.
A well-designed compensator regulates the output voltage
to the reference voltage VREF with fast transient response
and good stability. In order to achieve fast transient
response and accurate output regulation, an adequate
compensator design is necessary. The goal of the
compensation network is to provide adequate phase
margin (usually greater than 45 degrees) and the highest
bandwidth (0dB crossing frequency). It is also
recommended to manipulate loop frequency response that
its gain crosses over 0dB at a slope of -20dB/dec.
V IN
Pre-Bias Start Up
OSC
In order to prevent any potential negative spike on VOUT
during start-up, the RT8106/A performs a special UGATE/
LGATE warm-up sequence. The UGATE keeps normal
switching but the LGATE will turn on with a short pulse
train instead of turning on for a long period. The Figure 2.
shows that VOUT rises from its initial value and no negative
undershoot will happen.
Driver
PWM
Comparator
ΔV OSC
L
V OUT
-
Driver
+
LX
C OUT
ESR
Z FB
COMP
Z IN
EA
+
REF
Z FB
C2
C1
EA
+
LGATE
(5V/Div)
UGATE
(20V/Div)
C3
R2
V OUT
R3
R1
COMP
VOUT
(500mV/Div)
Z IN
FB
REF
Figure 3. Closed Loop
VIN = 12V, VOUT = 1.6V, ILOAD = 0A
Time (1ms/Div)
Figure 2. Pre-Bias Function
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9
RT8106/A
1) Modulator Frequency Equations
The modulator transfer function is the small-signal transfer
function of VOUT/VCOMP (output voltage over the error
amplifier output). This transfer function is dominated by a
DC gain, a double pole, and an ESR zero as shown in
Figure 3. The DC gain of the modulator is the input voltage
(VIN) divided by the peak to peak oscillator voltage VOSC.
The output LC filter introduces a double pole, 40dB/decade
gain slope above its corner resonant frequency, and a total
phase lag of 180 degrees. The resonant frequency of the
LC filter is expressed as :
fLC =
Figure 5. shows the DC-DC converter's magnitude Bode
Plot. The compensation gain uses external impedance
networks ZC and ZF to provide a stable, high bandwidth
loop. High crossover frequency is desirable for fast
transient response, but it often jeopardize the system
stability. In order to cancel one of the LC filter poles, place
the zero before the LC filter resonant frequency. In the
experience, place the zero at 75% of the LC filter resonant
frequency. Crossover frequency should be higher than the
ESR zero but less than 1/5 of the switching frequency.
The second pole is placed at half the switching frequency.
1
80 80
2π L OUT × C OUT
Loop Gain
60
The ESR zero is contributed by the ESR associated with
the output capacitance. Note that this requires that the
output capacitor should have enough ESR to satisfy
stability requirements. The ESR zero of the output
capacitor is expressed as follows :
fESR =
40 40
Compensation
Gain
Gain (dB)
20
0
0
-20
1
2π × COUT × ESR
Modulator
Gain
-40-40
-60-60
10Hz
10vdb(vo)
100Hz
vdb(comp2)100
vdb(lo)
2) Compensation Frequency Equations
The compensation network consists of the error amplifier
and the impedance networks ZC and ZF as shown in Figure
4.
ZF
10KHz
ZC
C2
R2
EA
+
R1
V OUT
FB
V REF
Figure 4. Compensation Loop
fZ1 =
1
2π x R2 x C2
fP1 =
1
2π x R2 x C1 x C2
C1 + C2
1.0MHz
1M
Figure 5. Bode Plot
Component Selection
The selection of output inductor is based on the
considerations of efficiency, output power and operating
frequency. Low inductance value has smaller size, but
results in low efficiency, large ripple current and high output
ripple voltage. Generally, an inductor that limits the ripple
current (ΔIL) between 20% and 50% of output current is
appropriate. Figure 6. shows the typical topology of the
synchronous step-down converter and its related
waveforms.
iS1
L
IL
+ VL iS2
S1
V IN
S2
IOUT
iC
+
V OR
-
+
rC
RL
V OUT
+
+
V OC
-
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10
100KHz
100k
1) Inductor Selection
C1
COMP
1.0KHz
1k
10k
Frequency (Hz)
Frequency
C OUT
-
DS8106/A-04 April 2011
RT8106/A
TS
Vg1
2) Output Capacitor Selection
The selection of output capacitor depends on the output
ripple voltage requirement. Practically, the output ripple
voltage is a function of both capacitance value and the
equivalent series resistance (ESR) rC. Figure 7. shows
the related waveforms of output capacitor.
TON TOFF
Vg2
VIN - VOUT
VL
diL VIN-VOUT
=
L
dt
iL
- VOUT
diL
VOUT
dt =
L
IOUT
TS
iL
ΔIL
IL = IOUT
iC
1/2ΔIL
0
ΔIL
iS1
VOC
ΔVOC
iS2
VOR
ΔIL x rc
0
Figure 6. The Waveforms of Synchronous Step-Down
Converter
According to Figure 6. the ripple current of inductor can
be calculated as follows :
VIN − VOUT
V
ΔI
D
= L L ; Δt = ; D = OUT
Δt
fs
VIN
L = (VIN − VOUT ) ×
VOUT
VIN × fs × ΔIL
(1)
t1
t2
Figure 7. The Related Waveforms of Output Capacitor
The AC impedance of output capacitor at operating
frequency is quite smaller than the load impedance, so
the ripple current (ΔIL) of the inductor current flows mainly
through the output capacitor. The output ripple voltage is
described as :
Where :
ΔVOUT = ΔVOR + ΔVOC
(2)
VIN = Maximum input voltage
ΔVOUT = ΔIL × rc + 1
CO
(3)
VOUT = Output Voltage
Δt = S1 turn on time
ΔIL = Inductor current ripple
fS = Switching frequency
D = Duty Cycle
rC = Equivalent series resistor of output capacitor
DS8106/A-04 April 2011
t2
∫t1 iC dt
ΔVOUT = ΔIL × ΔIL × rc + 1 VOUT (1− D)TS2
8 COL
(4)
where ΔVOR is caused by ESR and ΔVOC by capacitance.
For electrolytic capacitor application, typically 90% to 95%
of the output voltage ripple is contributed by the ESR of
the output capacitor. So Equation (4) can be simplified
as: ΔVOUT = ΔIL x rC
(5)
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11
RT8106/A
Users can connect capacitors in parallel to get calculated
ESR.
Input Capacitor
The selection of input capacitor is mainly based on its
maximum ripple current capability. The buck converter
draws pulsewise current from the input capacitor during
the on time of the S1 as shown in Figure 6. The RMS
value of ripple current flowing through the input capacitor
is described as :
Irms = IOUT D(1 − D) (A)
(6)
The input capacitor must be cable of handling this ripple
current. Sometime, for higher efficiency, the low ESR
capacitor is necessary.
PCB Layout Considerations
Note that the capacitors CIN and COUT each of them
represents numerous physical capacitors. Use a dedicated
grounding plane and use vias to ground all critical
components to this layer. Apply another solid layer as a
power plane and cut this plane into smaller islands of
common voltage levels. The power plane should support
the input power and output power nodes. Use copper filled
polygons on the top and bottom circuit layers for the LX
node, but it is not necessary to oversize this particular
island. Since the LX node is subjected to very high dV/dt
voltages, the stray capacitance formed between these
islands and the surrounding circuitry will tend to couple
switching noise. Use the remaining printed circuit layers
for small signal routing. The PCB traces between the PWM
controller and the gate of MOSFET and also the traces
connecting source of MOSFETs should be sized to carry
2A peak currents.
IQ1
IL
VOUT
5V/12V
Q1
IQ2
+
+
+
MOSFETs switch very fast and efficiently. The current
transition speed between different derices causes voltage
spikes across the interconnecting impedances and
parasitic circuit elements. The voltage spikes can degrade
efficiency and radiate noise that results in over-voltage
stress on devices. Careful component placement layout
and printed circuit design can minimize the voltage spikes
induced in the converter. For example, during the period
of upper MOSFETs turn-off transition, the upper MOSFET
was carrying the full load current. During turn-off, current
stops flowing in the upper MOSFET and is picked up by
the low side MOSFET or schottky diode. Any inductance
in the switched current path generates a large voltage
spike during the switching interval. Careful component
selections, layout of the critical components, and use
shorter and wider PCB traces help in minimizing the
magnitude of voltage spikes. The RT8106/A DC-DC
converter integrates two sets of critical components just
as follows. The switching power components are most
critical because they switch large amounts of energy, and
as such, they tend to generate equally large amounts of
noise. The critical small signal components are those
connected to sensitive nodes or those supplying critical
bypass current.
the power switches. Place the output inductor and output
capacitors between the MOSFETs and the load. Also
locate the PWM controller near by the MOSFETs. A multilayer printed circuit board is recommended. Figure 8
shows the connections of the critical components in the
converter.
LOAD
Q2
GND
GND
LGATE VCC
RT8106/A
UGATE
FB
Figure 8. The Connections of the Critical Components in
the Converter
For the proper layout of the RT8106/A the power
components and the PWM controller should be placed
firstly. And than place the input capacitors, especially the
high-frequency ceramic decoupling capacitors, close to
www.richtek.com
12
DS8106/A-04 April 2011
RT8106/A
Figure 9. RT8106/A PCB (Component Side)
DS8106/A-04 April 2011
Figure 10. RT8106/A PCB (Back-Side)
www.richtek.com
13
RT8106/A
Outline Dimension
D2
D
L
E
E2
1
SEE DETAIL A
2
e
A
A1
1
2
1
b
DETAIL A
Pin #1 ID and Tie Bar Mark Options
A3
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.180
0.300
0.007
0.012
D
2.950
3.050
0.116
0.120
D2
2.300
2.650
0.091
0.104
E
2.950
3.050
0.116
0.120
E2
1.500
1.750
0.059
0.069
e
L
0.500
0.350
0.020
0.450
0.014
0.018
W-Type 10L DFN 3x3 Package
Richtek Technology Corporation
Richtek Technology Corporation
Headquarter
Taipei Office (Marketing)
5F, No. 20, Taiyuen Street, Chupei City
5F, No. 95, Minchiuan Road, Hsintien City
Hsinchu, Taiwan, R.O.C.
Taipei County, Taiwan, R.O.C.
Tel: (8863)5526789 Fax: (8863)5526611
Tel: (8862)86672399 Fax: (8862)86672377
Email: [email protected]
Information that is provided by Richtek Technology Corporation is believed to be accurate and reliable. Richtek reserves the right to make any change in circuit
design, specification or other related things if necessary without notice at any time. No third party intellectual property infringement of the applications should be
guaranteed by users when integrating Richtek products into any application. No legal responsibility for any said applications is assumed by Richtek.
www.richtek.com
14
DS8106/A-04 April 2011