SMD General Purpose Transistor (NPN) MMBT4401 SMD General Purpose Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Marking Code MMBT4401 Unit 2X/M4A VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6.0 V Collector Current 0.6 A Ptot Power Dissipation above 25°C 250 mW RθJA Thermal Resistance, Junction to Ambient 357 °C /W Junction Temperature 150 °C -55 to +150 °C IC TJ TSTG Conditions Storage Temperature Range Note 1 Note: (1) Device mounted on FR-4 PCB 1.6’’ x 1.6’’ x 0.06’’ TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Rev. B/NX Tel: (800)-TAITRON Fax: (800)-TAITFA Page 1 of 3 (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 SMD General Purpose Transistor (NPN) MMBT4401 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol hFE Description D.C. Current Gain Min. Max. Unit Conditions 20 - VCE=1V, IC=0.1mA 40 - VCE=1V, IC=1mA 80 - VCE=1V, IC=10mA 100 300 VCE=1V, IC=150mA 40 - VCE=2V, IC=500mA V(BR)CBO V(BR)CEO Collector-Base Breakdown Voltage 60 - V IC=0.1mA, IE=0 Collector-Emitter Breakdown Voltage* 40 - V IC=1mA, IB=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=0.1mA, IC=0 - 0.40 - 0.75 0.75 0.95 - 1.20 VCEsat Collector-Emitter Saturation Voltage VBEsat Base-Emitter Saturation Voltage IC=150mA, IB=15mA V IC=500mA, IB=50mA IC=150mA, IB=15mA V IC=500mA, IB=50mA ICEV Collector Cut-off Current - 0.1 µA VEB=0.4V, VCE=35V IBEV Base Cut-off Current - 0.1 µA VEB=0.4V, VCE=35V VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=20mA, f=100MHz VCB=5V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 IB1=15mA IC=150mA VCC=30V VEB=2V IB1=IB2=15mA IC=150mA VCC=30V hie Input Impedance 1.0 15 kΩ hre Voltage Feedback Ratio 0.1 8.0 x10־ hoe Output Admittance 1.0 30 μS hfe Small Signal Current Gain 40 500 fT Current Gain-Bandwidth Product 250 - MHz CCBO Output Capacitance - 6.5 pF CEBO Input Capacitance - 30 pF td Delay Time - 15 tr Rise Time - 20 nS ts Storage Time - 225 tf Fall Time - 30 4 *Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0% Rev. B/NX www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (NPN) MMBT4401 Dimensions in mm SOT-23 How to contact us USA HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS INCORPORATED TAIWAN BRANCH 6F., NO.190, SEC. 2, ZHONGXING RD., XINDIAN DIST., NEW TAIPEI CITY 23146, TAIWAN R.O.C. Tel: 886-2-2913-6238 Fax: 886-2-2913-6239 TAITRON COMPONENT TECHNOLOG SHANGHAI CORPORATION SUITE 1503, METROBANK PLAZA, 1160 WEST YAN’AN ROAD, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-2302-5027 Rev. B/NX www.taitroncomponents.com Page 3 of 3